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Browse by Category: Main > Physics
Class Information
Number: 257/136
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Combined with field effect transistor > J-fet (junction field effect transistor) > Vertical (i.e., where the source is located above the drain or vice versa) > Enhancement mode (e.g., so-called sits)
Description: Subject matter in which no current flows except for leakage current, when the gate to source voltage is zero.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8710665 Electronic component, a semiconductor wafer and a method for producing an electronic component Apr. 29, 2014
8513675 Vertical junction field effect transistors having sloped sidewalls and methods of making Aug. 20, 2013
8482062 Semiconductor device having a floating semiconductor zone Jul. 9, 2013
8378417 Semiconductor device including a well potential supply device and a vertical MOS transistor Feb. 19, 2013
8318589 Method for forming transparent conductive oxide Nov. 27, 2012
8264033 Semiconductor device having a floating semiconductor zone Sep. 11, 2012
8227831 Semiconductor device having a junction FET and a MISFET for control Jul. 24, 2012
8202772 Vertical junction field effect transistors having sloped sidewalls and methods of making Jun. 19, 2012
8119471 Semiconductor device and method for manufacturing the same Feb. 21, 2012
8058670 Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up Nov. 15, 2011
8058655 Vertical junction field effect transistors having sloped sidewalls and methods of making Nov. 15, 2011
7704836 Method of fabricating super trench MOSFET including buried source electrode Apr. 27, 2010
7700971 Insulated gate silicon carbide semiconductor device Apr. 20, 2010
7642566 Scalable process and structure of JFET for small and decreasing line widths Jan. 5, 2010
7635600 Photovoltaic structure with a conductive nanowire array electrode Dec. 22, 2009
7510955 Method of fabricating multi-fin field effect transistor Mar. 31, 2009
7508013 Versatile system for cross-lateral junction field effect transistor Mar. 24, 2009
7488992 Electronic device comprising enhancement mode pHEMT devices, depletion mode pHEMT devices, and power pHEMT devices on a single substrate and method of creation Feb. 10, 2009
7482649 Multi-bit nonvolatile memory devices Jan. 27, 2009
7453107 Method for applying a stress layer to a semiconductor device and device formed therefrom Nov. 18, 2008
7439563 High-breakdown-voltage semiconductor device Oct. 21, 2008
7335928 Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each the first groove Feb. 26, 2008
7314765 Switching device using superlattice without any dielectric barriers Jan. 1, 2008
7288800 Versatile system for cross-lateral junction field effect transistor Oct. 30, 2007
7230283 Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each groove Jun. 12, 2007
7173290 Thyristor switch with turn-off current shunt, and operating method Feb. 6, 2007
7119380 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors Oct. 10, 2006
7082248 Semiconductor waveguide-based avalanche photodetector with separate absorption and multiplication regions Jul. 25, 2006
7045397 JFET and MESFET structures for low voltage high current and high frequency applications May. 16, 2006
6998697 Non-volatile resistance variable devices Feb. 14, 2006
6917054 Semiconductor device Jul. 12, 2005
6897493 Semiconductor device May. 24, 2005
6894346 Semiconductor device May. 17, 2005
6867437 Semiconductor device Mar. 15, 2005
6849880 Power semiconductor device Feb. 1, 2005
6838729 Semiconductor component with enhanced avalanche ruggedness Jan. 4, 2005
6831328 Anode voltage sensor of a vertical power component and use for protecting against short circuits Dec. 14, 2004
6777722 Method and structure for double dose gate in a JFET Aug. 17, 2004
6774408 Trench gate power device having a concentration at channel layer higher than a base layer and uniformly distributed along the depth of the trench and its manufacturing method Aug. 10, 2004
6750477 Static induction transistor Jun. 15, 2004
6693310 Semiconductor device and manufacturing method thereof Feb. 17, 2004
6653666 J-FET semiconductor configuration Nov. 25, 2003
6555878 Umos-like gate-controlled thyristor structure for ESD protection Apr. 29, 2003
6486511 Solid state RF switch with high cutoff frequency Nov. 26, 2002
6458632 UMOS-like gate-controlled thyristor structure for ESD protection Oct. 1, 2002
6445012 Semiconductor device and manufacturing method thereof Sep. 3, 2002
6355513 Asymmetric depletion region for normally off JFET Mar. 12, 2002
6265735 Semiconductor device and manufacturing method thereof Jul. 24, 2001
6259134 Trench thyristor with improved breakdown voltage characteristics Jul. 10, 2001
5977570 Semiconductor device and manufacturing method thereof Nov. 2, 1999

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