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Class Information
Number: 257/132
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Five or more layer unidirectional structure
Description: Subject matter wherein the regenerative active solid-state device has five or more layers of semiconductor material producing at least four active junctions, and is operable in a single electrical direction.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8610143 High output power light emitting device and package used therefor Dec. 17, 2013
8551830 Semiconductor integrated circuit switch matrix Oct. 8, 2013
8441031 ESD protection device May. 14, 2013
8319305 Solid-state image sensing apparatus Nov. 27, 2012
7948005 Insulated-gate bipolar transistor (IGBT) May. 24, 2011
7893457 Bipolar mosfet devices and methods for their use Feb. 22, 2011
7405419 Unidirectionally conductive materials for interconnection Jul. 29, 2008
7365373 Thyristor-type memory device Apr. 29, 2008
7342281 Electrostatic discharge protection circuit using triple welled silicon controlled rectifier Mar. 11, 2008
7247926 High-frequency switching transistor Jul. 24, 2007
6888177 Increased base-emitter capacitance May. 3, 2005
6803627 Reverse-blocking power semiconductor component having a region short-circuited to a drain-side part of a body zone Oct. 12, 2004
6750477 Static induction transistor Jun. 15, 2004
6703646 Thyristor with lightly-doped emitter Mar. 9, 2004
6700140 Thyristor switch for microwave signals Mar. 2, 2004
6624046 Three dimensional processor using transferred thin film circuits Sep. 23, 2003
6586780 Semiconductor device for supplying output voltage according to high power supply voltage Jul. 1, 2003
6552371 Telecommunications switch array with thyristor addressing Apr. 22, 2003
6521919 Semiconductor device of reduced thermal resistance and increased operating area Feb. 18, 2003
6501099 Modified-anode gate turn-off thyristor Dec. 31, 2002
6441407 Gate controlled thyristor driven with low-inductance Aug. 27, 2002
6188267 Normally conducting dual thyristor Feb. 13, 2001
6147369 SCR and current divider structure of electrostatic discharge protective circuit Nov. 14, 2000
6137122 Latch-up controllable insulated gate bipolar transistor Oct. 24, 2000
5757034 Emitter switched thyristor May. 26, 1998
5719411 Three-terminal MOS-gate controlled thyristor structures with current saturation characteristics Feb. 17, 1998
5696391 Overload protection circuit Dec. 9, 1997
5644148 Power transistor device having ultra deep increased concentration region Jul. 1, 1997
5627387 Overvoltage self-protection semiconductor device, method of fabrication thereof and semiconductor circuit using the same May. 6, 1997
5625203 Controlled turn-off power semiconductor device Apr. 29, 1997
5608237 Bidirectional semiconductor switch Mar. 4, 1997
5581095 Bidirectional shockley diode having overlapping emitter regions Dec. 3, 1996
5572048 Voltage-driven type semiconductor device Nov. 5, 1996
5569941 Insulated gate semiconductor device with a buried gapped semiconductor region Oct. 29, 1996
5498884 MOS-controlled thyristor with current saturation characteristics Mar. 12, 1996
5493134 Bidirectional AC switching device with MOS-gated turn-on and turn-off control Feb. 20, 1996
5489787 Semiconductor device having an insulated gate field effect transistor and exhibiting thyristor action Feb. 6, 1996
5488236 Latch-up resistant bipolar transistor with trench IGFET and buried collector Jan. 30, 1996
5477064 Thyristor Dec. 19, 1995
5444272 Three-terminal thyristor with single MOS-gate controlled characteristics Aug. 22, 1995
5412227 MOS-controlled thyristor with non-planar geometry May. 2, 1995
5401985 Low voltage monolithic protection diode with a low capacitance Mar. 28, 1995
5378903 Semiconductor device with low on-voltage and large controllable turn-off current Jan. 3, 1995
5349212 Semiconductor device having thyristor structure Sep. 20, 1994
5336907 MOS gate controlled thyristor having improved turn on/turn off characteristics Aug. 9, 1994
5323029 Static induction device Jun. 21, 1994
5319221 Semiconductor device with MISFET-controlled thyristor Jun. 7, 1994
5317172 PNPN semiconductor device capable of supporting a high rate of current change with time May. 31, 1994
5298769 GTO thyristor capable of preventing parasitic thyristors from being generated Mar. 29, 1994
5293051 Photoswitching device including a MOSFET for detecting zero voltage crossing Mar. 8, 1994

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