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Class Information
Number: 257/131
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Bidirectional rectifier with control electrode (gate) (e.g., triac) > Switching speed enhancement means > Recombination centers or deep level dopants
Description: Subject matter wherein the switching speed enhancement means include (1) centers wherein excess holes and electrons recombine and are removed as charge carriers in the device or (2) dopant ions with energy levels that are located in the forbidden band of the active semiconductor material of the device.










Patents under this class:

Patent Number Title Of Patent Date Issued
8455322 Silicon germanium heterojunction bipolar transistor structure and method Jun. 4, 2013
8390124 Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings Mar. 5, 2013
7838970 Semiconductor component with high concentration doped zone embedded in emitter region Nov. 23, 2010
7812368 High speed diode Oct. 12, 2010
7772057 Method of fabricating an integrated circuit with gate self-protection, and an integrated circuit with gate self-protection Aug. 10, 2010
7736977 Semiconductor device and a method for manufacturing therefor Jun. 15, 2010
7592642 Thyristor-based semiconductor device with indium-carbon implant and method of fabrication Sep. 22, 2009
7485920 Process to create buried heavy metal at selected depth Feb. 3, 2009
7332750 Power semiconductor device with improved unclamped inductive switching capability and process for forming same Feb. 19, 2008
7319250 Semiconductor component and method for producing the same Jan. 15, 2008
7307289 Pressed-contact type semiconductor device Dec. 11, 2007
7301178 Pressed-contact type semiconductor device Nov. 27, 2007
7276764 Semiconductor device with metal wire layer masking Oct. 2, 2007
7242037 Process for making non-uniform minority carrier lifetime distribution in high performance silicon power devices Jul. 10, 2007
7064359 Switching semiconductor device and switching circuit Jun. 20, 2006
7034345 High-power, integrated AC switch module with distributed array of hybrid devices Apr. 25, 2006
6870199 Semiconductor device having an electrode overlaps a short carrier lifetime region Mar. 22, 2005
6828690 Non-uniform minority carrier lifetime distributions in high performance silicon power devices Dec. 7, 2004
6774407 Semiconductor device with a suppressed increase in turned-on resistance and an improved turn-off response Aug. 10, 2004
6727526 Thyristor with recovery time voltage surge resistance Apr. 27, 2004
6713819 SOI MOSFET having amorphized source drain and method of fabrication Mar. 30, 2004
6639327 Semiconductor member, semiconductor device and manufacturing methods thereof Oct. 28, 2003
6472692 Semiconductor device Oct. 29, 2002
6455869 Motorcycle wheel lift Sep. 24, 2002
6396084 Structure of semiconductor rectifier May. 28, 2002
6373079 Thyristor with breakdown region Apr. 16, 2002
6274892 Devices formable by low temperature direct bonding Aug. 14, 2001
6239466 Insulated gate bipolar transistor for zero-voltage switching May. 29, 2001
6163040 Thyristor manufacturing method and thyristor Dec. 19, 2000
6031276 Semiconductor device and method of manufacturing the same with stable control of lifetime carriers Feb. 29, 2000
5883403 Power semiconductor device Mar. 16, 1999
5500539 Method of depositing diamond and diamond light emitting device Mar. 19, 1996
5426314 Insulated gate control static induction thyristor Jun. 20, 1995
5027177 Floating base lateral bipolar phototransistor with field effect gate voltage control Jun. 25, 1991
4956693 Semiconductor device Sep. 11, 1990
4951110 Power semiconductor structural element with four layers Aug. 21, 1990
4951109 Turn-off power semiconductor component Aug. 21, 1990
4855799 Power MOS FET with carrier lifetime killer Aug. 8, 1989
4311534 Reducing the reverse recovery charge of thyristors by nuclear irradiation Jan. 19, 1982
4187517 Semiconductor component Feb. 5, 1980
4134778 Selective irradiation of thyristors Jan. 16, 1979
4089024 Semiconductor switching device May. 9, 1978
4066484 Method of manufacture of a gold diffused thyristor Jan. 3, 1978
4056408 Reducing the switching time of semiconductor devices by nuclear irradiation Nov. 1, 1977
3947864 Diode-integrated thyristor Mar. 30, 1976
3943013 Triac with gold diffused boundary Mar. 9, 1976











 
 
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