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Class Information
Number: 257/130
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Bidirectional rectifier with control electrode (gate) (e.g., triac) > Switching speed enhancement means
Description: Subject matter wherein the bidirectional rectifier with control electrode includes or is combined with means to increase the speed at which the device switches.










Sub-classes under this class:

Class Number Class Name Patents
257/131 Recombination centers or deep level dopants 46


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8598620 MOSFET with integrated field effect rectifier Dec. 3, 2013
8564098 Controlling the recombination rate in a bipolar semiconductor component Oct. 22, 2013
8525223 Silicon carbide semiconductor device Sep. 3, 2013
8440997 Nanowire photodetector and image sensor with internal gain May. 14, 2013
8421118 Regenerative building block and diode bridge rectifier and methods Apr. 16, 2013
8395185 Switching element Mar. 12, 2013
8390124 Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings Mar. 5, 2013
8357952 Power semiconductor structure with field effect rectifier and fabrication method thereof Jan. 22, 2013
8242537 IGBT with fast reverse recovery time rectifier and manufacturing method thereof Aug. 14, 2012
8203171 Defective graphene-based memristor Jun. 19, 2012
8148748 Adjustable field effect rectifier Apr. 3, 2012
7968907 Low capacitance over-voltage protection thyristor device Jun. 28, 2011
7755389 Reconfigurable logic structures Jul. 13, 2010
7737465 Semiconductor apparatus and manufacturing method thereof Jun. 15, 2010
7642538 Switching element, line-switching device and logic circuit Jan. 5, 2010
7511532 Reconfigurable logic structures Mar. 31, 2009
7488992 Electronic device comprising enhancement mode pHEMT devices, depletion mode pHEMT devices, and power pHEMT devices on a single substrate and method of creation Feb. 10, 2009
7479654 Memory arrays using nanotube articles with reprogrammable resistance Jan. 20, 2009
7332750 Power semiconductor device with improved unclamped inductive switching capability and process for forming same Feb. 19, 2008
7301167 Organic light emitting devices and electroluminescent display panel applying the same Nov. 27, 2007
7285824 Semiconductor device having a lateral diode structure Oct. 23, 2007
7242037 Process for making non-uniform minority carrier lifetime distribution in high performance silicon power devices Jul. 10, 2007
7126204 Integrated semiconductor circuit with an electrically programmable switching element Oct. 24, 2006
7064359 Switching semiconductor device and switching circuit Jun. 20, 2006
7042026 Power switching device May. 9, 2006
6965129 Thyristor-based device having dual control ports Nov. 15, 2005
6906356 High voltage switch Jun. 14, 2005
6903374 Structure of p-electrode at the light-emerging side of light-emitting diode Jun. 7, 2005
6828690 Non-uniform minority carrier lifetime distributions in high performance silicon power devices Dec. 7, 2004
6815733 Switching element and method of making the same Nov. 9, 2004
6809387 Power switching device Oct. 26, 2004
6707128 Vertical MISFET transistor surrounded by a Schottky barrier diode with a common source and anode electrode Mar. 16, 2004
6593600 Responsive bidirectional static switch Jul. 15, 2003
6576925 Thin film transistor, liquid crystal display panel, and manufacturing method of thin film transistor Jun. 10, 2003
6555849 Deactivatable thyristor Apr. 29, 2003
6326648 Power switch with a controlled DI/DT Dec. 4, 2001
6163040 Thyristor manufacturing method and thyristor Dec. 19, 2000
5998813 Component for protecting telephone line interfaces Dec. 7, 1999
5773868 Semiconductor device and method of manufacturing the same Jun. 30, 1998
5541430 VDMOS semiconductor device Jul. 30, 1996
5479031 Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value Dec. 26, 1995
5426314 Insulated gate control static induction thyristor Jun. 20, 1995
5369291 Voltage controlled thyristor Nov. 29, 1994
5360990 P/N junction device having porous emitter Nov. 1, 1994
5336907 MOS gate controlled thyristor having improved turn on/turn off characteristics Aug. 9, 1994
5309002 Semiconductor device with protruding portion May. 3, 1994
5155569 Thyristor device with improved turn-off characteristics Oct. 13, 1992
4977438 Turn-off semiconductor component and use thereof Dec. 11, 1990
4969027 Power bipolar transistor device with integral antisaturation diode Nov. 6, 1990
4969028 Gate enhanced rectifier Nov. 6, 1990

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