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Class Information
Number: 257/128
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Bidirectional rectifier with control electrode (gate) (e.g., triac) > Having overlapping sections of different conductive polarity
Description: Subject matter wherein the bidirectional rectifier with control electrode has outer emitter regions which overlap one another in at least one portion.

Patents under this class:

Patent Number Title Of Patent Date Issued
8120023 Low crosstalk, front-side illuminated, back-side contact photodiode array Feb. 21, 2012
7982240 Bidirectional electronic switch Jul. 19, 2011
7898065 Structure and method for device-specific fill for improved anneal uniformity Mar. 1, 2011
7888712 Semiconductor device and method for manufacturing same Feb. 15, 2011
7842951 Transistor and display device having the same Nov. 30, 2010
7705367 Pinned photodiode sensor with gate-controlled silicon-controlled rectifier transfer switch and method of formation Apr. 27, 2010
7615801 High voltage silicon carbide devices having bi-directional blocking capabilities Nov. 10, 2009
7488657 Method and system for forming straight word lines in a flash memory array Feb. 10, 2009
7411304 Semiconductor interconnect having conductive spring contacts Aug. 12, 2008
7323726 Method and apparatus for coupling to a common line in an array Jan. 29, 2008
7002218 Low capacitance ESD-protection structure under a bond pad Feb. 21, 2006
6580100 Voltage-controlled vertical bidirectional monolithic switch Jun. 17, 2003
6252258 High power rectifier Jun. 26, 2001
6137124 Integrated vertical semiconductor component Oct. 24, 2000
6078065 Bilaterally controllable thyristor Jun. 20, 2000
5838043 ESD protection circuit located under protected bonding pad Nov. 17, 1998
5835985 Reverse conducting gate-turnoff thyristor Nov. 10, 1998
5757033 Bidirectional thyristor with MOS turn-off capability with a single gate May. 26, 1998
5629535 Bidirectional thyristor with MOS turn-on and turn-off capability May. 13, 1997
5483087 Bidirectional thyristor with MOS turn-off capability with a single gate Jan. 9, 1996
5463231 Method of operating thyristor with insulated gates Oct. 31, 1995
5369291 Voltage controlled thyristor Nov. 29, 1994
5298769 GTO thyristor capable of preventing parasitic thyristors from being generated Mar. 29, 1994
5293051 Photoswitching device including a MOSFET for detecting zero voltage crossing Mar. 8, 1994
5210432 Insulated gate GTO thyristor May. 11, 1993
4994885 Bidirectional triode thyristor Feb. 19, 1991
4857983 Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication Aug. 15, 1989
4812893 Triac desensitized with respect to re-striking risks on switching across a reactive load Mar. 14, 1989
4737834 Thyristor with controllable emitter short-circuit paths inserted in the emitter Apr. 12, 1988
4641175 Bidirectional power switch with optimized emitter spacing near control electrode Feb. 3, 1987
4243999 Gate turn-off thyristor Jan. 6, 1981
4187515 Semiconductor controlled rectifier Feb. 5, 1980
4157562 Gate controlled bidirectional semiconductor switching device having two base regions each having a different depth from an adjacent surface Jun. 5, 1979
4066483 Gate-controlled bidirectional switching device Jan. 3, 1978
4016593 Bidirectional photothyristor device Apr. 5, 1977
3972014 Four quadrant symmetrical semiconductor switch Jul. 27, 1976

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