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Class Information
Number: 257/125
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Bidirectional rectifier with control electrode (gate) (e.g., triac) > Combined with field effect transistor structure > Controllable emitter shunting
Description: Subject matter wherein the field effect transistor structure is connected to shunt one of the emitter-base junctions of the regenerative structure under control of the voltage applied to the gate of the field effect transistor.










Patents under this class:

Patent Number Title Of Patent Date Issued
8378383 Semiconductor device and method of forming a shielding layer between stacked semiconductor die Feb. 19, 2013
8357952 Power semiconductor structure with field effect rectifier and fabrication method thereof Jan. 22, 2013
8338855 Voltage-controlled bidirectional switch Dec. 25, 2012
7554131 Chip embedded package structure and fabrication method thereof Jun. 30, 2009
7087939 Solid-state imaging device and manufacturing method thereof Aug. 8, 2006
6911708 Duplexer filter having film bulk acoustic resonator and semiconductor package thereof Jun. 28, 2005
6580100 Voltage-controlled vertical bidirectional monolithic switch Jun. 17, 2003
6380565 Bidirectional switch with increased switching breakdown voltage Apr. 30, 2002
5757033 Bidirectional thyristor with MOS turn-off capability with a single gate May. 26, 1998
5629535 Bidirectional thyristor with MOS turn-on and turn-off capability May. 13, 1997
5483087 Bidirectional thyristor with MOS turn-off capability with a single gate Jan. 9, 1996
5426314 Insulated gate control static induction thyristor Jun. 20, 1995
4942443 Thyristor with auxiliary emitter electrode and short-circuit regions and method Jul. 17, 1990
4884114 Disconnectable thyristor Nov. 28, 1989
4857977 Lateral metal-oxide-semiconductor controlled triacs Aug. 15, 1989
4742380 Switch utilizing solid-state relay May. 3, 1988
4737834 Thyristor with controllable emitter short-circuit paths inserted in the emitter Apr. 12, 1988
4612562 PNPN switch device with capacitor formed outside active device areas Sep. 16, 1986
4611128 Triac having a multilayer semiconductor body Sep. 9, 1986
4577208 Bidirectional power FET with integral avalanche protection Mar. 18, 1986
4571606 High density, high voltage power FET Feb. 18, 1986
4550332 Gate controlled semiconductor device Oct. 29, 1985
4509089 Two-pole overcurrent protection device Apr. 2, 1985
4471372 FET Controlled Triac Sep. 11, 1984
4464673 Semiconductor component Aug. 7, 1984
4414560 Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region Nov. 8, 1983
4396932 Method for making a light-activated line-operable zero-crossing switch including two lateral transistors, the emitter of one lying between the emitter and collector of the other Aug. 2, 1983
4365170 Semiconductor switch Dec. 21, 1982
4244000 PNPN Semiconductor switches Jan. 6, 1981
4224634 Externally controlled semiconductor devices with integral thyristor and bridging FET components Sep. 23, 1980











 
 
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