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Class Information
Number: 257/12
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Heterojunction
Description: Subject matter wherein the device includes at least two adjacent active layers, one of which is made of a substance that differs from that of the other.










Sub-classes under this class:

Class Number Class Name Patents
257/26 Ballistic transport device 95
257/13 Incoherent light emitter 1,249
257/14 Quantum well 1,066


Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
8710489 Epitaxial substrate for electronic device, in which current flows in lateral direction and method of producing the same Apr. 29, 2014
8704207 Semiconductor device having nitride semiconductor layer Apr. 22, 2014
8685841 Methods for the production of nanoscale heterostructures Apr. 1, 2014
8684749 LED with improved injection efficiency Apr. 1, 2014
8680592 Method of forming a magnetic tunnel junction device Mar. 25, 2014
8680509 Nitride semiconductor device and method of producing the same Mar. 25, 2014
8674337 Gallium nitride based light emitting diode and fabrication method thereof Mar. 18, 2014
8658519 Nanowires, nanowire networks and methods for their formation and use Feb. 25, 2014
8633466 Compound semiconductor device, method for producing the same, and power supply Jan. 21, 2014
8624224 Nanotube array bipolar transistors Jan. 7, 2014
8610104 Nanotube array injection lasers Dec. 17, 2013
8575624 Semiconductor device Nov. 5, 2013
8575651 Devices having thick semi-insulating epitaxial gallium nitride layer Nov. 5, 2013
8564025 Nanowire FET having induced radial strain Oct. 22, 2013
8541770 Select devices including an open volume, memory devices and systems including same, and methods for forming same Sep. 24, 2013
8525221 LED with improved injection efficiency Sep. 3, 2013
8502190 Device of light-emitting diode Aug. 6, 2013
8502191 Semiconductor device, manufacturing method therefor, and solar cell Aug. 6, 2013
8497493 Growth substrate and light emitting device Jul. 30, 2013
8487345 Information recording and reproducing device Jul. 16, 2013
8487295 Semiconductor structures and devices including semiconductor material on a non-glassy bonding layer Jul. 16, 2013
8476639 Group III nitride semiconductor and group III nitride semiconductor structure Jul. 2, 2013
8470697 Method of forming p-type compound semiconductor layer Jun. 25, 2013
8455856 Integration of LED driver circuit with LED Jun. 4, 2013
8455922 Programmable gate III-nitride semiconductor device Jun. 4, 2013
8450192 Growth of planar, non-polar, group-III nitride films May. 28, 2013
8450760 Semiconductor light emitting device with integrated electronic components May. 28, 2013
8440994 Nanotube array electronic and opto-electronic devices May. 14, 2013
8410523 Misfit dislocation forming interfacial self-assembly for growth of highly-mismatched III-SB alloys Apr. 2, 2013
8405064 Nitride semiconductor device Mar. 26, 2013
8405066 Nitride-based semiconductor light-emitting device Mar. 26, 2013
8395184 Semiconductor device based on the cubic silicon carbide single crystal thin film Mar. 12, 2013
8389973 Memory using tunneling field effect transistors Mar. 5, 2013
8373153 Photodetectors Feb. 12, 2013
8357926 Gain-clamped semiconductor optical amplifiers Jan. 22, 2013
8338818 Nanowires, nanowire networks and methods for their formation and use Dec. 25, 2012
8330090 Photosensitive device and method of manufacturing a photosensitive device using nanowire diodes Dec. 11, 2012
8324613 Method for producing an electronic device with a layer structure and an electronic device Dec. 4, 2012
8313990 Nanowire FET having induced radial strain Nov. 20, 2012
8309991 Nanowire FET having induced radial strain Nov. 13, 2012
8288756 Hetero-structured, inverted-T field effect transistor Oct. 16, 2012
8290010 Surface plasmon generating apparatus and method for making the same Oct. 16, 2012
8278646 Nitride semiconductor light emitting device and fabrication method thereof Oct. 2, 2012
8274070 Semiconductor light-emitting element including an auxiliary electrode Sep. 25, 2012
8263965 Single-crystal semiconductor layer with heteroatomic macro-network Sep. 11, 2012
8258498 Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains Sep. 4, 2012
8258519 Light emitting diode device having uniform current distribution Sep. 4, 2012
8242481 Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them Aug. 14, 2012
8237150 Nanowire devices for enhancing mobility through stress engineering Aug. 7, 2012
8212235 Nanowire-based opto-electronic device Jul. 3, 2012

1 2 3 4 5 6 7 8










 
 
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