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Class Information
Number: 257/12
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Heterojunction
Description: Subject matter wherein the device includes at least two adjacent active layers, one of which is made of a substance that differs from that of the other.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7608854 |
Electronic device and method of making the same |
Oct. 27, 2009 |
| 7608853 |
Semiconductor light emitting diode that uses silicon nano dot and method of manufacturing the same |
Oct. 27, 2009 |
| 7589345 |
Nitride-based compound semiconductor substrate and method for fabricating the same |
Sep. 15, 2009 |
| 7579618 |
Carbon nanotube resonator transistor and method of making same |
Aug. 25, 2009 |
| 7576352 |
Method for producing compound semiconductor wafer and compound semiconductor device |
Aug. 18, 2009 |
| 7569941 |
Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
Aug. 4, 2009 |
| 7569862 |
Semiconductor light-emitting device and a method of manufacture thereof |
Aug. 4, 2009 |
| 7569847 |
Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
Aug. 4, 2009 |
| 7560725 |
Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices |
Jul. 14, 2009 |
| 7557385 |
Electronic devices formed on substrates and their fabrication methods |
Jul. 7, 2009 |
| 7550784 |
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
Jun. 23, 2009 |
| 7550309 |
Method for producing semiconductor wafer |
Jun. 23, 2009 |
| 7547928 |
AlGaN/GaN high electron mobility transistor devices |
Jun. 16, 2009 |
| 7547926 |
Heterojunction with linkages between an electron donor and an electron acceptor in a blend |
Jun. 16, 2009 |
| RE40725 |
Magnetic body formed by quantum dot array using non-magnetic semiconductor |
Jun. 9, 2009 |
| 7538480 |
Organic thin film transistor and flat panel display device including the same |
May. 26, 2009 |
| 7531827 |
Gallium nitride-based light emitting diode and fabrication method thereof |
May. 12, 2009 |
| 7507988 |
Semiconductor heterostructure including a substantially relaxed, low defect density SiGe layer |
Mar. 24, 2009 |
| 7488970 |
Semiconductor device |
Feb. 10, 2009 |
| 7482617 |
Optical semiconductor device and fabrication method thereof |
Jan. 27, 2009 |
| 7465954 |
Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles |
Dec. 16, 2008 |
| 7459718 |
Field effect transistor |
Dec. 2, 2008 |
| 7456442 |
Super lattice modification of overlying transistor |
Nov. 25, 2008 |
| 7456423 |
Quantum dot optoelectronic device having an Sb-containing overgrown layer |
Nov. 25, 2008 |
| 7446334 |
Electronic device comprising active optical devices with an energy band engineered superlattice |
Nov. 4, 2008 |
| 7432522 |
Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them |
Oct. 7, 2008 |
| 7427771 |
Universal gates for ising TQFT via time-tilted interferometry |
Sep. 23, 2008 |
| 7411187 |
Ion trap in a semiconductor chip |
Aug. 12, 2008 |
| 7397062 |
Heterojunction bipolar transistor with improved current gain |
Jul. 8, 2008 |
| 7391046 |
Light source module and vehicle front lamp |
Jun. 24, 2008 |
| 7382001 |
Enhancement mode III-nitride FET |
Jun. 3, 2008 |
| 7378680 |
Migration enhanced epitaxy fabrication of quantum wells |
May. 27, 2008 |
| 7348592 |
Carbon nanotube apparatus and method of carbon nanotube modification |
Mar. 25, 2008 |
| 7345297 |
Nitride semiconductor device |
Mar. 18, 2008 |
| 7339207 |
Semiconductor device including a group III-V nitride semiconductor |
Mar. 4, 2008 |
| 7335908 |
Nanostructures and methods for manufacturing the same |
Feb. 26, 2008 |
| 7320898 |
Semiconductor laser device and method for fabricating the same |
Jan. 22, 2008 |
| 7321132 |
Multi-layer structure for use in the fabrication of integrated circuit devices and methods for fabrication of same |
Jan. 22, 2008 |
| 7321131 |
Universal gates for ising TQFT via time-tilted interferometry |
Jan. 22, 2008 |
| 7317202 |
Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip |
Jan. 8, 2008 |
| 7297976 |
Optoelectronic transmitter integrated circuit and method of fabricating the same using selective growth process |
Nov. 20, 2007 |
| 7279697 |
Field effect transistor with enhanced insulator structure |
Oct. 9, 2007 |
| 7268362 |
High performance transistors with SiGe strain |
Sep. 11, 2007 |
| 7259406 |
Semiconductor optical element |
Aug. 21, 2007 |
| 7250624 |
Quasi-particle interferometry for logical gates |
Jul. 31, 2007 |
| 7244959 |
Detection of electromagnetic radiation using micromechanical multiple quantum wells structures |
Jul. 17, 2007 |
| 7244957 |
Group III nitride compound semiconductor light-emitting device and method for producing the same |
Jul. 17, 2007 |
| 7230285 |
Semiconductor device and hetero-junction bipolar transistor |
Jun. 12, 2007 |
| 7227177 |
Doped semiconductor nanocrystals |
Jun. 5, 2007 |
| 7180648 |
Electro-absorption modulator device and methods for fabricating the same |
Feb. 20, 2007 |
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