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Class Information
Number: 257/11
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Low workfunction layer for electron emission (e.g., photocathode electron emissive layer) > Combined with a heterojunction involving a iii-v compound
Description: Subject matter in which the thin active layer and low workfunction layer for electron emission are combined with a heterojunction, i.e., a transition region between two materials with different energy band gaps, one material of which is a III-V compound, i.e., a compound wherein one material is found in group III of the periodic table and another material is found in group V of the periodic table.










Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
5908699 Cold cathode electron emitter and display structure Jun. 1, 1999
5880481 Electron tube having a semiconductor cathode with lower and higher bandgap layers Mar. 9, 1999
5877510 Spin polarized electron semiconductor source and apparatus utilizing the same Mar. 2, 1999
5864147 Field emission device having configuration for correcting deviation of electron emission direction Jan. 26, 1999
5847407 Charge dissipation field emission device Dec. 8, 1998
5838607 Spin polarized apparatus Nov. 17, 1998
5834791 Process of emitting highly spin-polarized electron beam and semiconductor device therefor Nov. 10, 1998
5804833 Advanced semiconductor emitter technology photocathodes Sep. 8, 1998
5789759 Cathode structure for reduced emission and robust handling properties Aug. 4, 1998
5760417 Semiconductor electron emission device Jun. 2, 1998
5747862 Spin-polarized electron emitter having semiconductor opto-electronic layer with split valence band and reflecting mirror May. 5, 1998
5731597 Field emitter array incorporated with metal oxide semiconductor field effect transistors and method for fabricating the same Mar. 24, 1998
5723871 Process of emitting highly spin-polarized electron beam and semiconductor device therefor Mar. 3, 1998
5712490 Ramp cathode structures for vacuum emission Jan. 27, 1998
5710435 Photomultiplier having a photocathode comprised of semiconductor material Jan. 20, 1998
5679960 Compact display device Oct. 21, 1997
5675157 Transferred electron effect device Oct. 7, 1997
5666025 Flat-panel display containing structure for enhancing electron emission from carbon-containing cathode Sep. 9, 1997
5557167 Transmission mode photocathode sensitive to ultravoilet light Sep. 17, 1996
5554859 Electron emission element with schottky junction Sep. 10, 1996
5502314 Field-emission element having a cathode with a small radius Mar. 26, 1996
5497012 Unipolar band minima devices Mar. 5, 1996
5471051 Photocathode capable of detecting position of incident light in one or two dimensions, phototube, and photodetecting apparatus containing same Nov. 28, 1995
5463271 Structure for enhancing electron emission from carbon-containing cathode Oct. 31, 1995
5444328 Electron tube comprising a semiconductor cathode Aug. 22, 1995
5442193 Microelectronic field emission device with breakdown inhibiting insulated gate electrode Aug. 15, 1995
5408120 Light-emitting device of gallium nitride compound semiconductor Apr. 18, 1995
5404026 Infrared-sensitive photocathode Apr. 4, 1995
5359257 Ballistic electron, solid state cathode Oct. 25, 1994
5354694 Method of making highly doped surface layer for negative electron affinity devices Oct. 11, 1994
5336902 Semiconductor photo-electron-emitting device Aug. 9, 1994
5334853 Semiconductor cold electron emission device Aug. 2, 1994
5315127 Semiconductor device for emitting highly spin-polarized electron beam May. 24, 1994
5315126 Highly doped surface layer for negative electron affinity devices May. 24, 1994
5302840 HEMT type semiconductor device having two semiconductor well layers Apr. 12, 1994
5285079 Electron emitting device, electron emitting apparatus and electron beam drawing apparatus Feb. 8, 1994
5258624 Transferred electron effect device Nov. 2, 1993
5225703 Dual field effect transistor structure employing a single source region Jul. 6, 1993
5138407 Transistor made of 3-5 group semiconductor materials on a silicon substrate Aug. 11, 1992
5107306 Semiconductor device having a waveguide structure Apr. 21, 1992
5073809 Electro-optic modulation method and device using the low-energy oblique transition of a highly coupled super-grid Dec. 17, 1991
5068868 Vertical cavity surface emitting lasers with electrically conducting mirrors Nov. 26, 1991
5051791 Apparatus comprising refractive means for elections Sep. 24, 1991
5047821 Transferred electron III-V semiconductor photocathode Sep. 10, 1991
4974036 Semiconductor superlattice heterostructures on nonplanar substrates Nov. 27, 1990
4963947 Semiconductor array Oct. 16, 1990
4870032 Method of fabricating single crystal films of cubic group II fluorides on semiconductor componds by molecular beam epitaxy Sep. 26, 1989
4853754 Semiconductor device having cold cathode Aug. 1, 1989
4833507 Electron emission device May. 23, 1989
4829355 Photocathode having internal amplification May. 9, 1989

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