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Class Information
Number: 257/11
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Low workfunction layer for electron emission (e.g., photocathode electron emissive layer) > Combined with a heterojunction involving a iii-v compound
Description: Subject matter in which the thin active layer and low workfunction layer for electron emission are combined with a heterojunction, i.e., a transition region between two materials with different energy band gaps, one material of which is a III-V compound, i.e., a compound wherein one material is found in group III of the periodic table and another material is found in group V of the periodic table.

Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8633569 AlN inter-layers in III-N material grown on REO/silicon substrate Jan. 21, 2014
8507921 Single crystal compound semiconductor substrate Aug. 13, 2013
8476639 Group III nitride semiconductor and group III nitride semiconductor structure Jul. 2, 2013
8450192 Growth of planar, non-polar, group-III nitride films May. 28, 2013
8421054 Light-emitting diode Apr. 16, 2013
8405128 Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition Mar. 26, 2013
8344354 Spin-polarized electron source Jan. 1, 2013
8258497 Fabricating electronic-photonic devices having an active layer with spherical quantum dots Sep. 4, 2012
8242480 Engineering emission wavelengths in laser and light emitting devices Aug. 14, 2012
8222745 Integrated heat sink Jul. 17, 2012
8222057 Crack free multilayered devices, methods of manufacture thereof and articles comprising the same Jul. 17, 2012
8213475 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device Jul. 3, 2012
8207556 Group III nitride semiconductor device and epitaxial substrate Jun. 26, 2012
8188456 Thermionic electron emitters/collectors have a doped diamond layer with variable doping concentrations May. 29, 2012
8188458 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices May. 29, 2012
8168965 Semiconductor device and method using nanotube contacts May. 1, 2012
8129710 Plasmon enhanced nanowire light emitting diode Mar. 6, 2012
8120139 Void isolated III-nitride device Feb. 21, 2012
8084764 Semiconductor light emitting device and nitride semiconductor light emitting device Dec. 27, 2011
8030638 Quasi single crystal nitride semiconductor layer grown over polycrystalline SiC substrate Oct. 4, 2011
8017176 Robust activation method for negative electron affinity photocathodes Sep. 13, 2011
7982208 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices Jul. 19, 2011
7973303 Nitride semiconductor device Jul. 5, 2011
7973325 Reflective electrode and compound semiconductor light emitting device including the same Jul. 5, 2011
7968864 Group-III nitride light-emitting device Jun. 28, 2011
7968909 Reconditioned substrates for fabricating compound material wafers Jun. 28, 2011
7968865 Boron aluminum nitride diamond heterostructure Jun. 28, 2011
7943924 Indium gallium nitride-based Ohmic contact layers for gallium nitride-based devices May. 17, 2011
7943964 Al.sub.xGa.sub.yIn.sub.1-x-yN crystal substrate, semiconductor device, and method of manufacturing the same May. 17, 2011
7935615 III-V nitride semiconductor substrate and its production method May. 3, 2011
7935955 Group III nitride semiconductor multilayer structure May. 3, 2011
7915640 Heterojunction semiconductor device and method of manufacturing Mar. 29, 2011
7902561 Nitride semiconductor light emitting device Mar. 8, 2011
7902737 Light emission device with enhanced image luminance and display having the same Mar. 8, 2011
7812427 Soft switching semiconductor component with high robustness and low switching losses Oct. 12, 2010
7800097 Semiconductor device including independent active layers and method for fabricating the same Sep. 21, 2010
7795608 Photocathode Sep. 14, 2010
7781777 Pn junction type group III nitride semiconductor light-emitting device Aug. 24, 2010
7741654 Group III nitride semiconductor optical device Jun. 22, 2010
7737429 Nitride based semiconductor device using nanorods and process for preparing the same Jun. 15, 2010
7714316 Method of manufacturing semiconductor device, acid etching resistance material and copolymer May. 11, 2010
7667278 Metal carbide gate structure and method of fabrication Feb. 23, 2010
7649173 Method of preparing a sample for transmission electron microscopy Jan. 19, 2010
7595498 Electromagnetic wave generation apparatus and manufacturing method of electromagnetic wave generation apparatus Sep. 29, 2009
7576351 Nitride semiconductor light generating device Aug. 18, 2009
7547908 III-nitride light emitting devices grown on templates to reduce strain Jun. 16, 2009
7531826 Photocathode structure and operation May. 12, 2009
7525131 Photoelectric surface and photodetector Apr. 28, 2009
7518163 Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof Apr. 14, 2009
7492988 Ultra-compact planar AWG circuits and systems Feb. 17, 2009

1 2 3 4 5

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