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Class Information
Number: 257/105
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Tunneling pn junction (e.g., esaki diode) device > In three or more terminal device
Description: Subject matter wherein the tunnel junction is part of an active solid-state electronic device which has three or more electrical terminals (e.g., transistors or thyristors).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7226805 |
Sequential lithographic methods to reduce stacking fault nucleation sites |
Jun. 5, 2007 |
| 7109521 |
Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls |
Sep. 19, 2006 |
| 7042744 |
Diode stack |
May. 9, 2006 |
| 6940104 |
Cascaded diode structure with deep N-well and method for making the same |
Sep. 6, 2005 |
| 6838360 |
Non-volatile semiconductor memory with single layer gate structure |
Jan. 4, 2005 |
| 6797992 |
Apparatus and method for fabricating a high reverse voltage semiconductor device |
Sep. 28, 2004 |
| 6734470 |
Laterally varying multiple diodes |
May. 11, 2004 |
| 6690030 |
Semiconductor device with negative differential resistance characteristics |
Feb. 10, 2004 |
| 6661035 |
Laser device based on silicon nanostructures |
Dec. 9, 2003 |
| 6555440 |
Process for fabricating a top side pitted diode device |
Apr. 29, 2003 |
| 6515345 |
Transient voltage suppressor with diode overlaying another diode for conserving space |
Feb. 4, 2003 |
| 6507043 |
Epitaxially-grown backward diode |
Jan. 14, 2003 |
| 6410950 |
Geometrically coupled field-controlled-injection diode, voltage limiter and freewheeling diode having the geometrically coupled field-controlled-injection diode |
Jun. 25, 2002 |
| 6342718 |
Compact SRAM cell using tunnel diodes |
Jan. 29, 2002 |
| 6169298 |
Semiconductor light emitting device with conductive window layer |
Jan. 2, 2001 |
| 6163039 |
Triangular-barrier optoelectronic switch |
Dec. 19, 2000 |
| 6049364 |
Display panel and display device using the same |
Apr. 11, 2000 |
| 5952683 |
Functional semiconductor element with avalanche multiplication |
Sep. 14, 1999 |
| 5936265 |
Semiconductor device including a tunnel effect element |
Aug. 10, 1999 |
| 5864152 |
Semiconductor memory and method of writing, reading, and sustaining data |
Jan. 26, 1999 |
| 5825049 |
Resonant tunneling device with two-dimensional quantum well emitter and base layers |
Oct. 20, 1998 |
| 5705827 |
Tunnel transistor and method of manufacturing same |
Jan. 6, 1998 |
| 5686739 |
Three terminal tunnel device |
Nov. 11, 1997 |
| 5589696 |
Tunnel transistor comprising a semiconductor film between gate and source/drain |
Dec. 31, 1996 |
| 5514882 |
Bistable four layer device memory cell and method for storing and retrieving binary information |
May. 7, 1996 |
| 5500541 |
Semiconductor device having voltage sensing element |
Mar. 19, 1996 |
| 5486704 |
Semiconductor device and electronic device by use of the semiconductor |
Jan. 23, 1996 |
| 5422496 |
Interband single-electron tunnel transistor and integrated circuit |
Jun. 6, 1995 |
| 5412598 |
Bistable four layer device, memory cell, and method for storing and retrieving binary information |
May. 2, 1995 |
| 5373186 |
Bipolar transistor with monoatomic base layer between emitter and collector layers |
Dec. 13, 1994 |
| 5365083 |
Semiconductor device of band-to-band tunneling type |
Nov. 15, 1994 |
| 5258625 |
Interband single-electron tunnel transistor and integrated circuit |
Nov. 2, 1993 |
| 5144390 |
Silicon-on insulator transistor with internal body node to source node connection |
Sep. 1, 1992 |
| 5105233 |
Semiconductor luminescent device having organic/inorganic junction |
Apr. 14, 1992 |
| 5105247 |
Quantum field effect device with source extension region formed under a gate and between the source and drain regions |
Apr. 14, 1992 |
| 5060234 |
Injection laser with at least one pair of monoatomic layers of doping atoms |
Oct. 22, 1991 |
| 5032891 |
Semiconductor memory device and manufacturing method thereof |
Jul. 16, 1991 |
| 4969019 |
Three-terminal tunnel device |
Nov. 6, 1990 |
| 4882609 |
Semiconductor devices with at least one monoatomic layer of doping atoms |
Nov. 21, 1989 |
| 4835581 |
Electron gas hole gas tunneling transistor device |
May. 30, 1989 |
| 4799091 |
Quantum device output switch |
Jan. 17, 1989 |
| 4639753 |
Semiconductor device |
Jan. 27, 1987 |
| 4635089 |
MIS-integrated semiconductor device |
Jan. 6, 1987 |
| 4396931 |
Tunnel emitter upper valley transistor |
Aug. 2, 1983 |
| 4242595 |
Tunnel diode load for ultra-fast low power switching circuits |
Dec. 30, 1980 |
| 4173763 |
Heterojunction tunneling base transistor |
Nov. 6, 1979 |
| 3943554 |
Threshold switching integrated circuit and method for forming the same |
Mar. 9, 1976 |
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