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Class Information
Number: 257/101
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Incoherent light emitter structure > With particular dopant concentration or concentration profile (e.g., graded junction)
Description: Subject matter wherein the light emitting active junction has a particular concentration of dopant ions or profile in a given direction or cross sectional area or volume.

Patents under this class:
1 2 3 4 5 6 7 8 9 10

Patent Number Title Of Patent Date Issued
8704250 Nitride semiconductor light emitting device and fabrication method thereof Apr. 22, 2014
8692286 Light emitting device with bonded interface Apr. 8, 2014
8692287 Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer Apr. 8, 2014
8684749 LED with improved injection efficiency Apr. 1, 2014
8686455 Composite substrate for formation of light-emitting device, light-emitting diode device and manufacturing method thereof Apr. 1, 2014
8686571 Bonding layer structure and method for wafer to wafer bonding Apr. 1, 2014
8679873 Method for fabricating oxide-confined vertical-cavity surface-emitting laser Mar. 25, 2014
8680569 Method for manufacturing gallium oxide based substrate, light emitting device, and method for manufacturing the light emitting device Mar. 25, 2014
8669576 Semiconductor device and method of manufacturing the same Mar. 11, 2014
8669585 LED that has bounding silicon-doped regions on either side of a strain release layer Mar. 11, 2014
8664638 Light-emitting diode having an interlayer with high voltage density and method for manufacturing the same Mar. 4, 2014
8653538 Rod type light emitting device and method for fabricating the same Feb. 18, 2014
8648384 Light emitting device Feb. 11, 2014
8648369 Light emitting device and method of fabricating the same Feb. 11, 2014
8633469 Group III nitride semiconductor light-emitting device Jan. 21, 2014
8629347 Photovoltaic cells based on nanoscale structures Jan. 14, 2014
8624107 Photovoltaic cells based on nanoscale structures Jan. 7, 2014
8624108 Photovoltaic cells based on nano or micro-scale structures Jan. 7, 2014
8610167 Group III nitride compound semiconductor light-emitting device and method for producing the same Dec. 17, 2013
8604467 Organic electro-optical component Dec. 10, 2013
8592822 Light emitting device and lighting apparatus Nov. 26, 2013
8587022 Nitride semiconductor light-emitting element and process for production thereof Nov. 19, 2013
8581287 Semiconductor light emitting device having a reflective material, wavelength converting layer and optical plate with rough and plane surface regions, and method of manufacturing Nov. 12, 2013
8546791 Electro-optic diode devices Oct. 1, 2013
8541789 Light-emitting device with patterned current diffusion layer Sep. 24, 2013
8536615 Semiconductor device structures with modulated and delta doping and related methods Sep. 17, 2013
8530913 Light emitting device Sep. 10, 2013
8525221 LED with improved injection efficiency Sep. 3, 2013
8525220 Light emitting diode with improved structure Sep. 3, 2013
8513694 Nitride semiconductor device and manufacturing method of the device Aug. 20, 2013
8502238 Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device Aug. 6, 2013
8482024 Light emitting device and method for manufacturing same Jul. 9, 2013
8476671 Light emitting device, light emitting device package, and lighting device Jul. 2, 2013
8470697 Method of forming p-type compound semiconductor layer Jun. 25, 2013
8445938 Nitride semi-conductive light emitting device May. 21, 2013
8441004 Radiation emitting device and method for the production thereof May. 14, 2013
8426846 Organic electroluminescent element, method of manufacturing organic electroluminescent element, lighting device, and display device Apr. 23, 2013
8421116 Light emitting device and method for manufacturing the same Apr. 16, 2013
8420227 Composite material, light emitting element and light emitting device Apr. 16, 2013
8415687 Organic light-emitting device Apr. 9, 2013
8415694 Light emitting devices with improved light extraction efficiency Apr. 9, 2013
8410478 p-Type MgZnO-based thin film and semiconductor light emitting device Apr. 2, 2013
8410473 Light emitting device Apr. 2, 2013
8409972 Light emitting diode having undoped and unintentionally doped nitride transition layer Apr. 2, 2013
8399909 Tetra-lateral position sensing detector Mar. 19, 2013
8384110 Light emitting device Feb. 26, 2013
8354689 Light emitting devices having dopant front loaded tunnel barrier layers Jan. 15, 2013
8350250 Nitride-based light emitting device Jan. 8, 2013
8338196 Light-emitting element and light emitting device using the same Dec. 25, 2012
8334542 Light emitting diode and manufacturing method thereof Dec. 18, 2012

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