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Class Information
Number: 257/1
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bulk effect device
Description: Subject matter in which the active device is made up of a semiconductor material whose electrical characteristics are due to the electronic properties of the semiconductor material, which are exhibited throughout the entire body of material rather than in just a localized region thereof (e.g., the surface).










Sub-classes under this class:

Class Number Class Name Patents
257/2 Bulk effect switching in amorphous material 1,064
257/6 Intervalley transfer (e.g., gunn effect) 55


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8710481 Non-volatile memory cell containing a nano-rail electrode Apr. 29, 2014
8709834 Methods of fabricating semiconductor device Apr. 29, 2014
8692225 Resistive memory device and fabrication method thereof Apr. 8, 2014
8686394 Semiconductor constructions and memory arrays Apr. 1, 2014
8684749 LED with improved injection efficiency Apr. 1, 2014
8686391 Pore phase change material cell fabricated from recessed pillar Apr. 1, 2014
8673692 Charging controlled RRAM device, and methods of making same Mar. 18, 2014
8652923 Nonvolatile memory device having an electrode interface coupling region Feb. 18, 2014
8642985 Memory Cell Feb. 4, 2014
8618525 Work function tailoring for nonvolatile memory applications Dec. 31, 2013
8614432 Crystalline silicon-based memristive device with multiple mobile dopant species Dec. 24, 2013
8614501 Method of producing a layer of cavities Dec. 24, 2013
8604456 Nonvolatile memory device and method of manufacturing the same Dec. 10, 2013
8598560 Resistive memory elements exhibiting increased interfacial adhesion strength, methods of forming the same, and related resistive memory cells and memory devices Dec. 3, 2013
8592619 Bifunctional molecules comprising a cycloalkyne or heterocycloalkyne group and a redox group Nov. 26, 2013
8592790 Phase-change random access memory device and method of manufacturing the same Nov. 26, 2013
8586443 Method of fabricating phase change memory device capable of reducing disturbance Nov. 19, 2013
8558210 Polysilicon emitter BJT access device for PCRAM Oct. 15, 2013
8558287 Apparatus and method for introducing a controllable delay to an input signal Oct. 15, 2013
8551890 Showerhead for CVD depositions Oct. 8, 2013
8546778 Resistance variable memory cells and methods Oct. 1, 2013
8547721 Resistive memory device Oct. 1, 2013
8536562 Methods of forming memory structures and methods of forming memory arrays Sep. 17, 2013
8530873 Electroforming free memristor and method for fabricating thereof Sep. 10, 2013
8525221 LED with improved injection efficiency Sep. 3, 2013
8487288 Memory device incorporating a resistance variable chalcogenide element Jul. 16, 2013
8471234 Multilayer memristive devices Jun. 25, 2013
8461565 Electrically actuated devices Jun. 11, 2013
8440990 Nonvolatile memory device having an electrode interface coupling region May. 14, 2013
8421190 Group III nitride semiconductor substrate and manufacturing method thereof Apr. 16, 2013
8415226 Phase change memory cells and fabrication thereof Apr. 9, 2013
8395138 Nonvolatile semiconductor memory having buffer layer containing nitrogen and containing carbon as main component Mar. 12, 2013
8395137 Memory cell constructions Mar. 12, 2013
8395901 Vertically-stacked electronic devices having conductive carbon films Mar. 12, 2013
8362456 Resistance change element and semiconductor device including the same Jan. 29, 2013
8350247 Resistive random access memory having a solid solution layer and method of manufacturing the same Jan. 8, 2013
8334526 Phase change memory device capable of reducing disturbance Dec. 18, 2012
8330135 Germanium based metal-insulator transition thin film, metal-insulator transition device including the metal-insulator transition thin film, and method of fabricating the metal-insulator transi Dec. 11, 2012
8330138 Electronic device comprising a convertible structure, and a method of manufacturing an electronic device Dec. 11, 2012
8331131 Changing a memristor state Dec. 11, 2012
8325507 Memristors with an electrode metal reservoir for dopants Dec. 4, 2012
8294132 Graphene memristor having modulated graphene interlayer conduction Oct. 23, 2012
8288747 Optoelectronic memory devices Oct. 16, 2012
8258493 Nonvolatile semiconductor memory apparatus and manufacturing method thereof Sep. 4, 2012
8217380 Polysilicon emitter BJT access device for PCRAM Jul. 10, 2012
8203134 Memory devices with enhanced isolation of memory cells, systems including same and methods of forming same Jun. 19, 2012
8173989 Resistive random access memory device and methods of manufacturing and operating the same May. 8, 2012
8143610 Semiconductor phase-change memory device Mar. 27, 2012
8138574 PCM with poly-emitter BJT access devices Mar. 20, 2012
8133793 Carbon nano-film reversible resistance-switchable elements and methods of forming the same Mar. 13, 2012

1 2 3 4










 
 
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