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Class Information
Number: 252/62.3ZT
Name: Compositions > Barrier layer device compositions > Groups ii and vi elements containing binary compound; e.g., zn, te
Description:


Patents under this class:

Patent Number Title Of Patent Date Issued
7608237 Synthesis of nanostructured materials using liquid crystalline templates Oct. 27, 2009
7591990 Processes for preparing chalcopyrite-type compounds and other inorganic compounds Sep. 22, 2009
7544343 CdTe system compound semiconductor single crystal Jun. 9, 2009
7468146 Metal chalcogenide composite nano-particles and layers therewith Dec. 23, 2008
7404913 Codoped direct-gap semiconductor scintillators Jul. 29, 2008
6761986 Thin film infrared transparent conductor Jul. 13, 2004
6627100 Current/voltage non-linear resistor and sintered body therefor Sep. 30, 2003
6126740 Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films Oct. 3, 2000
5820669 (Zinc,cadmium) aluminate-gallate-containing paints Oct. 13, 1998
5523022 Semiconductor compound Jun. 4, 1996
5490953 Semiconductor compound Feb. 13, 1996
5427716 Compound semiconductors and semiconductor light-emitting devices using the same Jun. 27, 1995
5393444 Piezoelectric semiconductor Feb. 28, 1995
5094693 Doped zinc oxide-based pigment Mar. 10, 1992
4939043 Optically transparent electrically conductive semiconductor windows Jul. 3, 1990
4911905 Method of forming stoichiometric II-VI compounds of high purity Mar. 27, 1990
4743310 HGCDTE epitaxially grown on crystalline support May. 10, 1988
4650539 Manufacture of cadmium mercury telluride Mar. 17, 1987
4634493 Method for making semiconductor crystals Jan. 6, 1987
4584054 Solids refining process Apr. 22, 1986
4529027 Method of preparing a plurality of castings having a predetermined composition Jul. 16, 1985
4526632 Method of fabricating a semiconductor pn junction Jul. 2, 1985
4487640 Method for the preparation of epitaxial films of mercury cadmium telluride Dec. 11, 1984
4450086 Production of cadmium sulfide compositions having unusual magnetic and electrical properties May. 22, 1984
4435224 Process for preparing homogeneous layers of composition Hg.sub.1-x Cd.sub.x Mar. 6, 1984
4365155 Scintillator with ZnWO.sub.4 single crystal Dec. 21, 1982
4344476 Supercool method for producing single crystal mercury cadmium telluride Aug. 17, 1982
4282045 Pb.sub.1-W Cd.sub.W S Epitaxial thin film Aug. 4, 1981
4264914 Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same Apr. 28, 1981
4254093 Solar energy grade cadmium sulfide Mar. 3, 1981
4181627 High fluorescent efficiency zinc oxide crystals and method of making same Jan. 1, 1980
4141777 Method of preparing doped single crystals of cadmium telluride Feb. 27, 1979
4123295 Mercury chalcogenide contact for semiconductor devices Oct. 31, 1978
4116725 Heat treatment of cadmium mercury telluride and product Sep. 26, 1978
4105477 Doping of (Hg,Cd)Te with a Group VA element Aug. 8, 1978
4105479 Preparation of halogen doped mercury cadmium telluride Aug. 8, 1978
4105478 Doping HgCdTe with Li Aug. 8, 1978
4105472 Preparation of silicon doped mercury cadmium telluride Aug. 8, 1978
4087293 Silicon as donor dopant in Hg.sub.1-x Cd.sub.x Te May. 2, 1978
4087294 Lithium doped mercury cadmium telluride May. 2, 1978
4086106 Halogen-doped Hg,Cd,Te Apr. 25, 1978
4035819 Method of making a zinc sulphide ceramic body and a zinc sulphide ceramic body made thereby Jul. 12, 1977
4011074 Process for preparing a homogeneous alloy Mar. 8, 1977
3972742 Deep power diode Aug. 3, 1976
3960618 Epitaxial growth process for compound semiconductor crystals in liquid phase Jun. 1, 1976
3956023 Process for making a deep power diode by thermal migration of dopant May. 11, 1976



 
 
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