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Class Information
Number: 252/62.3V
Name: Compositions > Barrier layer device compositions > Group vi element-containing
Description:
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7608237 |
Synthesis of nanostructured materials using liquid crystalline templates |
Oct. 27, 2009 |
| 7591990 |
Processes for preparing chalcopyrite-type compounds and other inorganic compounds |
Sep. 22, 2009 |
| RE39640 |
Conductive isostructural compounds |
May. 22, 2007 |
| 6797662 |
Electrically conductive ceramics |
Sep. 28, 2004 |
| 6761986 |
Thin film infrared transparent conductor |
Jul. 13, 2004 |
| 6461582 |
Single-crystal rod and process for its production |
Oct. 8, 2002 |
| 6312617 |
Conductive isostructural compounds |
Nov. 6, 2001 |
| 6273969 |
Alloys and methods for their preparation |
Aug. 14, 2001 |
| 5242505 |
Amorphous silicon-based photovoltaic semiconductor materials free from Staebler-Wronski effects |
Sep. 7, 1993 |
| 5173127 |
Semi-insulating INP single crystals, semiconductor devices having substrates of the crystals and processes for producing the same |
Dec. 22, 1992 |
| 4830877 |
Compositions for forming insulating films on electromagnetic steel plates and methods for making the same |
May. 16, 1989 |
| 4804490 |
Method of fabricating stabilized threshold switching material |
Feb. 14, 1989 |
| 4649227 |
Photoactive pyrite layer and process for making and using same |
Mar. 10, 1987 |
| 4634493 |
Method for making semiconductor crystals |
Jan. 6, 1987 |
| 4602189 |
Light sink layer for a thin-film EL display panel |
Jul. 22, 1986 |
| 4344476 |
Supercool method for producing single crystal mercury cadmium telluride |
Aug. 17, 1982 |
| 4263604 |
Graded gap semiconductor detector |
Apr. 21, 1981 |
| 4249987 |
Method of growing large Pb.sub.1-x -Sn.sub.x -Te single crystals where 0<X<1 |
Feb. 10, 1981 |
| 4228454 |
High temperature cadmium boracite semiconductor device |
Oct. 14, 1980 |
| 4154631 |
Equilibrium growth technique for preparing PbS.sub.x Se.sub.1-x epilayers |
May. 15, 1979 |
| 4144147 |
Photolysis of water using rhodate semiconductive electrodes |
Mar. 13, 1979 |
| 4076572 |
Crystal growth and anneal of lead tin telluride by recrystallization from a heterogeneous system |
Feb. 28, 1978 |
| 4066481 |
Metalorganic chemical vapor deposition of IVA-IVA compounds and composite |
Jan. 3, 1978 |
| 4040917 |
Preparation of intercalated chalcogenides |
Aug. 9, 1977 |
| 4006107 |
Method of producing ternary lead molybdenum sulfides |
Feb. 1, 1977 |
| 3961998 |
Vacuum deposition method for fabricating an epitaxial PbSnTe rectifying metal semiconductor contact photodetector |
Jun. 8, 1976 |
| 3956461 |
Orthorhombic rare earth Hf and Zr sulfides and selenides |
May. 11, 1976 |
| 3945935 |
Semiconductive metal chalcogenides of the type Cu.sub.3 VS.sub.4 and methods for preparing them |
Mar. 23, 1976 |
| 3940472 |
Quaternary sulfides and selenides containing Ba or Sr and selected transition metals |
Feb. 24, 1976 |
| 3932291 |
Preparation and doping of semiconducting forms of CuAlS.sub.2 |
Jan. 13, 1976 |
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