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Class Information
Number: 252/62.3GA
Name: Compositions > Barrier layer device compositions > Group iii element containing binary compound; e.g., ga, as
Description:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6797662 |
Electrically conductive ceramics |
Sep. 28, 2004 |
| 6627100 |
Current/voltage non-linear resistor and sintered body therefor |
Sep. 30, 2003 |
| 6325849 |
P-type gaas single crystal and method for manufacturing the same |
Dec. 4, 2001 |
| 6287478 |
Optical window |
Sep. 11, 2001 |
| 6287381 |
Crystal growth process for large area GaAs with controllable resistivity and infrared window/dome with EMI-EMP protection formed therefrom |
Sep. 11, 2001 |
| 6277297 |
Optical window composition |
Aug. 21, 2001 |
| 6273969 |
Alloys and methods for their preparation |
Aug. 14, 2001 |
| 6126740 |
Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films |
Oct. 3, 2000 |
| 6045767 |
Charge for vertical boat growth process and use thereof |
Apr. 4, 2000 |
| 6010638 |
Conductive/insulating graded GaAs bulk material |
Jan. 4, 2000 |
| 6001271 |
Conductive/insulating graded GaAs bulk material |
Dec. 14, 1999 |
| 5976398 |
Process for manufacturing semiconductor, apparatus for manufacturing semiconductor, and amorphous material |
Nov. 2, 1999 |
| 5942148 |
Nitride compacts |
Aug. 24, 1999 |
| 5657335 |
P-type gallium nitride |
Aug. 12, 1997 |
| 5612014 |
Compound semiconductor crystal |
Mar. 18, 1997 |
| 5523022 |
Semiconductor compound |
Jun. 4, 1996 |
| 5508829 |
LTG AlGaAs non-linear optical material and devices fabricated therefrom |
Apr. 16, 1996 |
| 5490953 |
Semiconductor compound |
Feb. 13, 1996 |
| 5474591 |
Method of synthesizing III-V semiconductor nanocrystals |
Dec. 12, 1995 |
| 5427716 |
Compound semiconductors and semiconductor light-emitting devices using the same |
Jun. 27, 1995 |
| 5302559 |
Mixed crystals of doped rare earth gallium garnet |
Apr. 12, 1994 |
| 5296048 |
Class of magnetic materials for solid state devices |
Mar. 22, 1994 |
| 5201985 |
Method and apparatus for the purification and control of the composition of non-stoichiometric and stoichiometric crystalline compounds |
Apr. 13, 1993 |
| 5122845 |
Substrate for growing gallium nitride compound-semiconductor device and light emitting diode |
Jun. 16, 1992 |
| 5084128 |
Low-temperature synthesis of group III-group V semiconductors |
Jan. 28, 1992 |
| 5076860 |
AlGaN compound semiconductor material |
Dec. 31, 1991 |
| 5011564 |
Epitaxial growth |
Apr. 30, 1991 |
| 5007979 |
Method of fabricating GaAs single crystal |
Apr. 16, 1991 |
| 4999082 |
Process for producing monocrystalline group II-IV or group III-V compounds and products thereof |
Mar. 12, 1991 |
| 4902486 |
Novel gallium arsenide precursor and low temperature method of preparing gallium arsenide therefrom |
Feb. 20, 1990 |
| 4776971 |
Gallium arsenide single crystals with low dislocation density and high purity |
Oct. 11, 1988 |
| 4756792 |
Method for vapor-phase epitaxial growth of a single crystalline-, gallium arsenide thin film |
Jul. 12, 1988 |
| 4670176 |
Single crystal of compound semiconductor of groups III-V with low dislocation density |
Jun. 2, 1987 |
| 4618396 |
GaAs single crystal and preparation thereof |
Oct. 21, 1986 |
| 4609530 |
GaAs single crystal with small fluctuation in impurity concentration in the plane perpendicular to the growth direction of the crystal |
Sep. 2, 1986 |
| 4594173 |
Indium doped gallium arsenide crystals and method of preparation |
Jun. 10, 1986 |
| 4550014 |
Method for production of free-standing polycrystalline boron phosphide film |
Oct. 29, 1985 |
| 4529027 |
Method of preparing a plurality of castings having a predetermined composition |
Jul. 16, 1985 |
| 4521951 |
Method of reduction of a compound forming a layer on a substrate and the application of said method to the fabrication of a field-effect semiconducting structure |
Jun. 11, 1985 |
| 4447276 |
Molecular beam epitaxy electrolytic dopant source |
May. 8, 1984 |
| 4439004 |
Optical waveguide and modulator and process for fabricating same |
Mar. 27, 1984 |
| 4427714 |
Thin films of compounds and alloy compounds of Group III and Group V elements |
Jan. 24, 1984 |
| 4407694 |
Multi-range doping of epitaxial III-V layers from a single source |
Oct. 4, 1983 |
| 4399097 |
Preparation of III-V materials by reduction |
Aug. 16, 1983 |
| 4253887 |
Method of depositing layers of semi-insulating gallium arsenide |
Mar. 3, 1981 |
| 4238232 |
Metallic modified material of intermetallic compound |
Dec. 9, 1980 |
| 4220488 |
Gas-phase process for the production of an epitaxial layer of indum phosphide |
Sep. 2, 1980 |
| 4214926 |
Method of doping IIb or VIb group elements into a boron phosphide semiconductor |
Jul. 29, 1980 |
| 4204893 |
Process for depositing chrome doped epitaxial layers of gallium arsenide utilizing a preliminary formed chemical vapor-deposited chromium oxide dopant source |
May. 27, 1980 |
| 4170496 |
Beveled wafer for thermal gradient zone melting utilizing a beveled wafer edge |
Oct. 9, 1979 |
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