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Class Information
Number: 252/62.3E
Name: Compositions > Barrier layer device compositions > Free element containing
Description:
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7442320 |
Nanostructured materials and photovoltaic devices including nanostructured materials |
Oct. 28, 2008 |
| 6780927 |
Non-silicone conductive paste for the electrical industry, and its use |
Aug. 24, 2004 |
| 6607676 |
Preparation of carbonaceous semiconductor material |
Aug. 19, 2003 |
| 6586867 |
Glass spacer of particular composition and electron-beam emitting display device |
Jul. 1, 2003 |
| 6540944 |
Current limiting device with conductive composite material and method of manufacturing the conductive composite material and the current limiting device |
Apr. 1, 2003 |
| 6103138 |
Silicon-system thin film, photovoltaic device, method for forming silicon-system thin film, and method for producing photovoltaic device |
Aug. 15, 2000 |
| 6028264 |
Semiconductor having low concentration of carbon |
Feb. 22, 2000 |
| 5523022 |
Semiconductor compound |
Jun. 4, 1996 |
| 5490953 |
Semiconductor compound |
Feb. 13, 1996 |
| 5431743 |
Silicon for solar cells, a process for the preparation thereof, and the use thereof |
Jul. 11, 1995 |
| 5427716 |
Compound semiconductors and semiconductor light-emitting devices using the same |
Jun. 27, 1995 |
| 5296048 |
Class of magnetic materials for solid state devices |
Mar. 22, 1994 |
| 5017308 |
Silicon thin film and method of producing the same |
May. 21, 1991 |
| 5007979 |
Method of fabricating GaAs single crystal |
Apr. 16, 1991 |
| 4696716 |
Apparatus for doping semiconductor rods with solid dopants |
Sep. 29, 1987 |
| 4631234 |
Germanium hardened silicon substrate |
Dec. 23, 1986 |
| 4620968 |
Monoclinic phosphorus formed from vapor in the presence of an alkali metal |
Nov. 4, 1986 |
| 4618396 |
GaAs single crystal and preparation thereof |
Oct. 21, 1986 |
| 4492810 |
Optimized doped and band gap adjusted photoresponsive amorphous alloys and devices |
Jan. 8, 1985 |
| 4461783 |
Non-single-crystalline semiconductor layer on a substrate and method of making same |
Jul. 24, 1984 |
| 4392011 |
Solar cell structure incorporating a novel single crystal silicon material |
Jul. 5, 1983 |
| 4377423 |
Liquid metal inclusion migration by means of an electrical potential gradient |
Mar. 22, 1983 |
| 4249957 |
Copper doped polycrystalline silicon solar cell |
Feb. 10, 1981 |
| 4237150 |
Method of producing hydrogenated amorphous silicon film |
Dec. 2, 1980 |
| 4237151 |
Thermal decomposition of silane to form hydrogenated amorphous Si film |
Dec. 2, 1980 |
| 4201622 |
Method of mitigating titanium impurities effects in p-type silicon material for solar cells |
May. 6, 1980 |
| 4177474 |
High temperature amorphous semiconductor member and method of making the same |
Dec. 4, 1979 |
| 4177473 |
Amorphous semiconductor member and method of making the same |
Dec. 4, 1979 |
| 4170490 |
Process for thermal gradient zone melting utilizing a beveled wafer edge |
Oct. 9, 1979 |
| 4170496 |
Beveled wafer for thermal gradient zone melting utilizing a beveled wafer edge |
Oct. 9, 1979 |
| 4168992 |
Process for thermal gradient zone melting utilizing a beveled wafer and a beveled guard ring |
Sep. 25, 1979 |
| 4129463 |
Polycrystalline silicon semiconducting material by nuclear transmutation doping |
Dec. 12, 1978 |
| 4105472 |
Preparation of silicon doped mercury cadmium telluride |
Aug. 8, 1978 |
| 4102766 |
Process for doping high purity silicon in an arc heater |
Jul. 25, 1978 |
| 4102767 |
Arc heater method for the production of single crystal silicon |
Jul. 25, 1978 |
| 4092209 |
Silicon implanted and bombarded with phosphorus ions |
May. 30, 1978 |
| 4081293 |
Uniform thermomigration utilizing sample movement |
Mar. 28, 1978 |
| 4035199 |
Process for thermal gradient zone melting utilizing a guard ring radiation coating |
Jul. 12, 1977 |
| 4032364 |
Deep diode silicon controlled rectifier |
Jun. 28, 1977 |
| 4028151 |
Method of impregnating a semiconductor with a diffusant and article so formed |
Jun. 7, 1977 |
| 4021269 |
Post diffusion after temperature gradient zone melting |
May. 3, 1977 |
| 4012236 |
Uniform thermal migration utilizing noncentro-symmetric and secondary sample rotation |
Mar. 15, 1977 |
| 4001047 |
Temperature gradient zone melting utilizing infrared radiation |
Jan. 4, 1977 |
| 3998675 |
Method of doping a semiconductor body |
Dec. 21, 1976 |
| 3998662 |
Migration of fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface |
Dec. 21, 1976 |
| 3998661 |
Uniform migration of an annular shaped molten zone through a solid body |
Dec. 21, 1976 |
| 3986905 |
Process for producing semiconductor devices with uniform junctions |
Oct. 19, 1976 |
| 3979230 |
Method of making isolation grids in bodies of semiconductor material |
Sep. 7, 1976 |
| 3979271 |
Deposition of solid semiconductor compositions and novel semiconductor materials |
Sep. 7, 1976 |
| 3977910 |
Deep finger diodes |
Aug. 31, 1976 |
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