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Class Information
Number: 250/309
Name: Radiant energy > Inspection of solids or liquids by charged particles > Positive ion probe or microscope type
Description: Subject matter wherein the charged particles are positively charged.


Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
6107629 Method to determine depth profiles in an area of thin coating Aug. 22, 2000
6080991 Method for milling a transmission electron microscope test slice Jun. 27, 2000
6080986 Secondary ion mass spectrometer with aperture mask Jun. 27, 2000
6078045 Process for analysis of a sample Jun. 20, 2000
6043489 Positron source Mar. 28, 2000
6039000 Focused particle beam systems and methods using a tilt column Mar. 21, 2000
6037588 Method for testing semiconductor device Mar. 14, 2000
6031229 Automatic sequencing of FIB operations Feb. 29, 2000
6008491 Time-of-flight SIMS/MSRI reflectron mass analyzer and method Dec. 28, 1999
5969355 Focused ion beam optical axis adjustment method and focused ion beam apparatus Oct. 19, 1999
5952658 Method and system for judging milling end point for use in charged particle beam milling system Sep. 14, 1999
5943548 Method of analyzing a wafer in a semiconductor device fabrication process Aug. 24, 1999
5920068 Analysis of semiconductor surfaces by secondary ion mass spectrometry Jul. 6, 1999
5917186 Focused ion beam optical axis adjustment method and focused ion beam apparatus Jun. 29, 1999
5877891 Scanning probe microscope having a single viewing device for on-axis and oblique optical views Mar. 2, 1999
5854488 Ion beam machining method and device thereof Dec. 29, 1998
5852297 Focused ion beam apparatus and method for irradiating focused ion beam Dec. 22, 1998
5821549 Through-the-substrate investigation of flip-chip IC's Oct. 13, 1998
5801472 Micro-fabricated device with integrated electrostatic actuator Sep. 1, 1998
5798529 Focused ion beam metrology Aug. 25, 1998
5753914 Method and apparatus for investigating the physical properties of material surface layer May. 19, 1998
5714757 Surface analyzing method and its apparatus Feb. 3, 1998
5689112 Apparatus for detection of surface contaminations on silicon wafers Nov. 18, 1997
5656811 Method for making specimen and apparatus thereof Aug. 12, 1997
5637870 Method of analysis of distribution of concentration of substrate Jun. 10, 1997
5637879 Focused ion beam column with electrically variable blanking aperture Jun. 10, 1997
5633495 Process for operating a time-of-flight secondary-ion mass spectrometer May. 27, 1997
5619034 Differentiating mass spectrometer Apr. 8, 1997
5616921 Self-masking FIB milling Apr. 1, 1997
5602390 Electrostatic repulsion ion microscope Feb. 11, 1997
5601982 Method and apparatus for determining the sequence of polynucleotides Feb. 11, 1997
5591970 Charged beam apparatus Jan. 7, 1997
5578822 Particle-optical apparatus comprising a detector for secondary electrons Nov. 26, 1996
5576542 Substrate cross-section observing apparatus Nov. 19, 1996
5574280 Focused ion beam apparatus and method Nov. 12, 1996
5569919 X-ray analytical apparatus Oct. 29, 1996
5541411 Image-to-image registration focused ion beam system Jul. 30, 1996
5539203 Single ion implantation system Jul. 23, 1996
5532494 Treatment and observation apparatus using scanning probe Jul. 2, 1996
5528034 Method of ultra high sensitivity hydrogen detection with slow multiply-charged ions Jun. 18, 1996
5521377 Measurement of trace element concentration distribution, and evaluation of carriers, in semiconductors, and preparation of standard samples May. 28, 1996
5504340 Process method and apparatus using focused ion beam generating means Apr. 2, 1996
5502305 Measurement of trace element concentration distribution, and evaluation of carriers, in semiconductors, and preparation of standard samples Mar. 26, 1996
5495110 Observation method and apparatus for removing an oxidation layer and forming an image from a sample Feb. 27, 1996
5442174 Measurement of trace element concentration distribution, and evaluation of carriers, in semiconductors, and preparation of standard samples Aug. 15, 1995
5440124 High mass resolution local-electrode atom probe Aug. 8, 1995
5438197 Focused ion beam apparatus Aug. 1, 1995
5434422 Sample position controller in focused ion beam system Jul. 18, 1995
5406080 Process for monitoring ion-assisted processing procedures on wafers and an apparatus for carrying out the same Apr. 11, 1995
5401965 Secondary ion mass spectrometer for analyzing positive and negative ions Mar. 28, 1995

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