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Class Information
Number: 219/121.42
Name: Electric heating > Metal heating (e.g., resistance heating) > By arc > Using plasma > Cutting > Etching > Rate control
Description: Subject matter wherein the speed of removal of material from a workpiece by a plasma torch is regulated (e.g., by controlling gas flow or power to the torch).


Patents under this class:

Patent Number Title Of Patent Date Issued
7297892 Systems and methods for laser-assisted plasma processing Nov. 20, 2007
6888094 Plasma processing method and plasma processing apparatus May. 3, 2005
6747239 Plasma processing apparatus and method Jun. 8, 2004
6700090 Plasma processing method and plasma processing apparatus Mar. 2, 2004
6552296 Toroidal low-field reactive gas source Apr. 22, 2003
6392187 Apparatus and method for utilizing a plasma density gradient to produce a flow of particles May. 21, 2002
6288357 Ion milling planarization of semiconductor workpieces Sep. 11, 2001
6215087 Plasma film forming method and plasma film forming apparatus Apr. 10, 2001
6153849 Method and apparatus for preventing etch rate drop after machine idle in plasma etch chamber Nov. 28, 2000
5928532 Method of detecting end point of plasma processing and apparatus for the same Jul. 27, 1999
5895586 Plasma processing apparatus and plasma processing method in which a part of the processing chamber is formed using a pre-fluorinated material of aluminum Apr. 20, 1999
5780803 Process for the stabilization of plasma generation by means of electron beam vaporizer Jul. 14, 1998
5726412 Linear microwave source for plasma surface treatment Mar. 10, 1998
5449880 Process and apparatus for forming a deposited film using microwave-plasma CVD Sep. 12, 1995
5444207 Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field Aug. 22, 1995
5399830 Plasma treatment apparatus Mar. 21, 1995
5245157 Microwave plasma processing or semiconductor devices Sep. 14, 1993
5225651 Device for low-temperature plasma surface treatment of a plate or a sheet of a metallic material Jul. 6, 1993
5218179 Plasma source arrangement for ion implantation Jun. 8, 1993
5153406 Microwave source Oct. 6, 1992
5061838 Toroidal electron cyclotron resonance reactor Oct. 29, 1991
4987284 Downstream microwave plasma processing apparatus having an improved coupling structure between microwave plasma Jan. 22, 1991
4894510 Apparatus for uniformly distributing plasma over a substrate Jan. 16, 1990
4891488 Processing apparatus and method Jan. 2, 1990
4698481 Method for preventing decomposition of silicon carbide articles during high temperature plasma furnace sintering Oct. 6, 1987
4695700 Dual detector system for determining endpoint of plasma etch process Sep. 22, 1987
4612432 Etching plasma generator diffusor and cap Sep. 16, 1986
4611110 Method and apparatus for connecting a plasma generator to a reactor Sep. 9, 1986
4578559 Plasma etching method Mar. 25, 1986
4574177 Plasma etch method for TiO.sub.2 Mar. 4, 1986
4529860 Plasma etching of organic materials Jul. 16, 1985
4431898 Inductively coupled discharge for plasma etching and resist stripping Feb. 14, 1984
4412119 Method for dry-etching Oct. 25, 1983
4388140 Apparatus for wet treatment of wafer materials Jun. 14, 1983
4377734 Method for forming patterns by plasma etching Mar. 22, 1983
4361749 Uniformly cooled plasma etching electrode Nov. 30, 1982
4357195 Apparatus for controlling a plasma reaction Nov. 2, 1982
4352974 Plasma etcher having isotropic subchamber with gas outlet for producing uniform etching Oct. 5, 1982
4348577 High selectivity plasma etching method Sep. 7, 1982
4342901 Plasma etching electrode Aug. 3, 1982
4307283 Plasma etching apparatus II-conical-shaped projection Dec. 22, 1981
4253907 Anisotropic plasma etching Mar. 3, 1981
4138306 Apparatus for the treatment of semiconductors Feb. 6, 1979
4062102 Process for manufacturing a solar cell from a reject semiconductor wafer Dec. 13, 1977



 
 
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