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Class Information
Number: 216
Name: Etching a substrate: processes >
Description: Class 216 is an integral part of Class 156. It incorporates all the definitions, rules, and hierarchy pertaining to subject matter of Class 156.










Class Number Class Name No. of Patents
216/33

Adhesive or autogenous bonding of two or more self-sustaining preforms wherein at least two of the preforms are not intended to be removed (e.g., prefabricated base, etc.)

374
216/34

Etching improves or promotes adherence of preforms being bonded

121
216/35

Bonding of preform of metal or an alloy thereof to a preform of a nonmetal

84
216/36

Removing at least one of the self-sustaining preforms or a portion thereof

145
216/37

Etching and coating occur in the same processing chamber

386
216/2

Etching of semiconductor material to produce an article having a nonelectrical function

1146
216/56

Etching to produce porous or perforated article

415
216/39

Forming groove or hole in a substrate which is subsequently filled or coated

523
216/4

Forming or treating a sign or material useful in a sign

34
216/5

Sign or material is electroluminescent

38
216/11

Forming or treating an article whose final configuration has a projection

473
216/28

Forming or treating an ornamented article

36
216/32

Treating elemental metal or alloy thereof

30
216/31

Treating glass (e.g., mirror, etc.)

43
216/30

Treating stone (e.g., marble, etc.)

11
216/29

Wood surface treated or wood grain produced

11
216/23

Forming or treating article containing a liquid crystal material

173
216/22

Forming or treating article containing magnetically responsive material

834
216/8

Forming or treating cylindrical or tubular article having pattern or design on its surface

49
216/9

Forming or treating an embossing cylinder or tubular article

26
216/10

Forming or treating liquid transfer cylinder or tubular article (e.g., printing roll, etc.)

27
216/13

Forming or treating electrical conductor article (e.g., circuit, etc.)

1030
216/20

Adhesive or autogenous bonding of self-sustaining preforms (e.g., prefabricated base, etc.)

509
216/15

Forming or treating a crossover

38
216/14

Forming or treating lead frame or beam lead

117
216/17

Forming or treating of groove or through hole

551
216/19

Filling or coating of groove or through hole in a conductor with an insulator

108
216/18

Filling or coating of groove or through hole with a conductor to form an electrical interconnection

608
216/16

Forming or treating resistive material

177
216/21

Repairing circuit

36
216/7

Forming or treating fibrous article or fiber reinforced composite structure

33
216/3

Forming or treating josephson junction article

61
216/12

Forming or treating mask used for its nonetching function (e.g., shadow mask, x-ray mask, etc.)

289
216/6

Forming or treating material useful in a capacitor

134
216/24

Forming or treating optical article

845
216/26

Lens

180
216/25

Phosphor screen

41
216/27

Forming or treating thermal ink jet article (e.g., print head, liquid jet recording head, etc.)

736
216/40

Forming pattern using lift off technique

198
216/57

Gas phase and nongaseous phase etching on the same substrate

202
216/58

Gas phase etching of substrate

773
216/63

Application of energy to the gaseous etchant or to the substrate being etched

301
216/64

Etchant is devoid of chlorocarbon or fluorocarbon compound (e.g., c.f.c., etc.)

80
216/66

Using ion beam, ultraviolet, or visible light

860
216/65

Using laser

615
216/67

Using plasma

2561
216/71

Specific configuration of electrodes to generate the plasma

327
216/68

Using coil to generate the plasma

230
216/69

Using microwave to generate the plasma

189
216/70

Magnetically enhancing the plasma

135
216/72

Etching a multiple layered substrate where the etching condition used produces a different etching rate or characteristic between at least two of the layers of the substrate

343
216/74

Etching inorganic substrate

212
216/81

Etching elemental carbon containing substrate

113
216/79

Etching silicon containing substrate

917
216/80

Silicon containing substrate is glass

252
216/75

Substrate contains elemental metal, alloy thereof, or metal compound

417
216/76

Etching of substrate containing at least one compound having at least one oxygen atom and at least one metal atom

185
216/77

Etching of substrate containing elemental aluminum, or an alloy or compound thereof

203
216/78

Etching of substrate containing elemental copper, or an alloy or compound thereof

121
216/73

Etching vapor produced by evaporation, boiling, or sublimation

49
216/62

Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to etching to change properties of substrate toward the etchant

475
216/59

With measuring, testing, or inspecting

479
216/61

By electrical means or of an electrical property

163
216/60

By optical means or of an optical property

396
216/55

Heating or baking of substrate prior to etching to change the chemical properties of substrate toward the etchant

118
216/41

Masking of a substrate using material resistant to an etchant (i.e., etch resist)

1513
216/43

Adhesively bonding resist to substrate

51
216/48

Mask is exposed to nonimaging radiation

802
216/47

Mask is multilayer resist

510
216/45

Mask is reusable (i.e., stencil)

45
216/51

Mask resist contains inorganic material

385
216/49

Mask resist contains organic compound

439
216/50

Mask resist contains a color imparting agent

21
216/46

Masking of sidewall

172
216/44

Mechanically forming pattern into a resist

133
216/42

Resist material applied in particulate form or spray

103
216/52

Mechanically shaping, deforming, or abrading of substrate

739
216/53

Nongaseous phase etching

124
216/83

Nongaseous phase etching of substrate

859
216/96

Etching inorganic substrate

251
216/100

Substrate contains elemental metal, alloy thereof, or metal compound

617
216/108

Etchant contains acid

437
216/109

Etchant contains fluoride ion

178
216/101

Etching of a compound containing at least one oxygen atom and at least one metal atom

270
216/102

Metal is elemental aluminum, an alloy, or compound thereof

239
216/103

Etchant contains acid

223
216/104

Etchant contains fluoride ion

79
216/105

Metal is elemental copper, an alloy, or compound thereof

302
216/106

Etchant contains acid

261
216/107

Etchant contains fluoride ion

56
216/99

Substrate contains silicon or silicon compound

754
216/97

Substrate is glass

367
216/98

Frosting glass

14
216/94

Etching using radiation (e.g., laser, electron-beam, ion-beam, etc.)

189
216/87

Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to ethching to change properties of substrate toward the etchant

268
216/92

Projecting etchant against a moving substrate or controlling the angle or pattern projection of the etchant or controlling the angle or pattern of movement of the substrate

276
216/93

Recycling, regenerating, or rejunevating etchant

197
216/90

Relative movement between the substrate and a confined pool of etchant

196
216/91

Rotating, repeated dipping, or advancing movement of substrate

179
216/95

Substrate is multilayered

191
216/88

Using film of etchant between a stationary surface and a moving surface (e.g., chemical lapping, etc.)

629
216/89

Etchant contains solid particle (e.g., abrasive for polishing, etc.)

558
216/84

With measuring, testing, or inspecting

272
216/86

By electrical means or of an electrical property

112
216/85

By optical means or of an optical property

155
216/54

Pattern or design applied by transfer

176
216/38

Planarizing a nonplanar surface

447
 
 
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