| Class Number |
Class Name |
No. of Patents |
| 216/33 |
Adhesive or autogenous bonding of two or more self-sustaining preforms wherein at least two of the preforms are not intended to be removed (e.g., prefabricated base, etc.) |
333 |
| 216/34 |
Etching improves or promotes adherence of preforms being bonded |
108 |
| 216/35 |
Bonding of preform of metal or an alloy thereof to a preform of a nonmetal |
80 |
| 216/36 |
Removing at least one of the self-sustaining preforms or a portion thereof |
113 |
| 216/37 |
Etching and coating occur in the same processing chamber |
225 |
| 216/2 |
Etching of semiconductor material to produce an article having a nonelectrical function |
923 |
| 216/56 |
Etching to produce porous or perforated article |
305 |
| 216/39 |
Forming groove or hole in a substrate which is subsequently filled or coated |
372 |
| 216/4 |
Forming or treating a sign or material useful in a sign |
30 |
| 216/5 |
Sign or material is electroluminescent |
33 |
| 216/11 |
Forming or treating an article whose final configuration has a projection |
355 |
| 216/28 |
Forming or treating an ornamented article |
27 |
| 216/32 |
Treating elemental metal or alloy thereof |
22 |
| 216/31 |
Treating glass (e.g., mirror, etc.) |
26 |
| 216/30 |
Treating stone (e.g., marble, etc.) |
11 |
| 216/29 |
Wood surface treated or wood grain produced |
5 |
| 216/23 |
Forming or treating article containing a liquid crystal material |
147 |
| 216/22 |
Forming or treating article containing magnetically responsive material |
597 |
| 216/8 |
Forming or treating cylindrical or tubular article having pattern or design on its surface |
37 |
| 216/9 |
Forming or treating an embossing cylinder or tubular article |
25 |
| 216/10 |
Forming or treating liquid transfer cylinder or tubular article (e.g., printing roll, etc.) |
25 |
| 216/13 |
Forming or treating electrical conductor article (e.g., circuit, etc.) |
809 |
| 216/20 |
Adhesive or autogenous bonding of self-sustaining preforms (e.g., prefabricated base, etc.) |
481 |
| 216/15 |
Forming or treating a crossover |
31 |
| 216/14 |
Forming or treating lead frame or beam lead |
106 |
| 216/17 |
Forming or treating of groove or through hole |
425 |
| 216/19 |
Filling or coating of groove or through hole in a conductor with an insulator |
90 |
| 216/18 |
Filling or coating of groove or through hole with a conductor to form an electrical interconnection |
542 |
| 216/16 |
Forming or treating resistive material |
162 |
| 216/21 |
Repairing circuit |
27 |
| 216/7 |
Forming or treating fibrous article or fiber reinforced composite structure |
26 |
| 216/3 |
Forming or treating josephson junction article |
59 |
| 216/12 |
Forming or treating mask used for its nonetching function (e.g., shadow mask, x-ray mask, etc.) |
253 |
| 216/6 |
Forming or treating material useful in a capacitor |
120 |
| 216/24 |
Forming or treating optical article |
661 |
| 216/26 |
Lens |
148 |
| 216/25 |
Phosphor screen |
37 |
| 216/27 |
Forming or treating thermal ink jet article (e.g., print head, liquid jet recording head, etc.) |
605 |
| 216/40 |
Forming pattern using lift off technique |
144 |
| 216/57 |
Gas phase and nongaseous phase etching on the same substrate |
149 |
| 216/58 |
Gas phase etching of substrate |
467 |
| 216/63 |
Application of energy to the gaseous etchant or to the substrate being etched |
234 |
| 216/64 |
Etchant is devoid of chlorocarbon or fluorocarbon compound (e.g., c.f.c., etc.) |
63 |
| 216/66 |
Using ion beam, ultraviolet, or visible light |
670 |
| 216/65 |
Using laser |
467 |
| 216/67 |
Using plasma |
1975 |
| 216/71 |
Specific configuration of electrodes to generate the plasma |
259 |
| 216/68 |
Using coil to generate the plasma |
191 |
| 216/69 |
Using microwave to generate the plasma |
170 |
| 216/70 |
Magnetically enhancing the plasma |
115 |
| 216/72 |
Etching a multiple layered substrate where the etching condition used produces a different etching rate or characteristic between at least two of the layers of the substrate |
263 |
| 216/74 |
Etching inorganic substrate |
146 |
| 216/81 |
Etching elemental carbon containing substrate |
86 |
| 216/79 |
Etching silicon containing substrate |
795 |
| 216/80 |
Silicon containing substrate is glass |
198 |
| 216/75 |
Substrate contains elemental metal, alloy thereof, or metal compound |
334 |
| 216/76 |
Etching of substrate containing at least one compound having at least one oxygen atom and at least one metal atom |
160 |
| 216/77 |
Etching of substrate containing elemental aluminum, or an alloy or compound thereof |
186 |
| 216/78 |
Etching of substrate containing elemental copper, or an alloy or compound thereof |
105 |
| 216/73 |
Etching vapor produced by evaporation, boiling, or sublimation |
32 |
| 216/62 |
Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to etching to change properties of substrate toward the etchant |
330 |
| 216/59 |
With measuring, testing, or inspecting |
339 |
| 216/61 |
By electrical means or of an electrical property |
123 |
| 216/60 |
By optical means or of an optical property |
339 |
| 216/55 |
Heating or baking of substrate prior to etching to change the chemical properties of substrate toward the etchant |
86 |
| 216/41 |
Masking of a substrate using material resistant to an etchant (i.e., etch resist) |
1047 |
| 216/43 |
Adhesively bonding resist to substrate |
39 |
| 216/48 |
Mask is exposed to nonimaging radiation |
729 |
| 216/47 |
Mask is multilayer resist |
413 |
| 216/45 |
Mask is reusable (i.e., stencil) |
35 |
| 216/51 |
Mask resist contains inorganic material |
344 |
| 216/49 |
Mask resist contains organic compound |
334 |
| 216/50 |
Mask resist contains a color imparting agent |
17 |
| 216/46 |
Masking of sidewall |
108 |
| 216/44 |
Mechanically forming pattern into a resist |
72 |
| 216/42 |
Resist material applied in particulate form or spray |
74 |
| 216/52 |
Mechanically shaping, deforming, or abrading of substrate |
634 |
| 216/53 |
Nongaseous phase etching |
96 |
| 216/83 |
Nongaseous phase etching of substrate |
559 |
| 216/96 |
Etching inorganic substrate |
160 |
| 216/100 |
Substrate contains elemental metal, alloy thereof, or metal compound |
525 |
| 216/108 |
Etchant contains acid |
399 |
| 216/109 |
Etchant contains fluoride ion |
158 |
| 216/101 |
Etching of a compound containing at least one oxygen atom and at least one metal atom |
249 |
| 216/102 |
Metal is elemental aluminum, an alloy, or compound thereof |
205 |
| 216/103 |
Etchant contains acid |
186 |
| 216/104 |
Etchant contains fluoride ion |
63 |
| 216/105 |
Metal is elemental copper, an alloy, or compound thereof |
280 |
| 216/106 |
Etchant contains acid |
239 |
| 216/107 |
Etchant contains fluoride ion |
47 |
| 216/99 |
Substrate contains silicon or silicon compound |
626 |
| 216/97 |
Substrate is glass |
308 |
| 216/98 |
Frosting glass |
9 |
| 216/94 |
Etching using radiation (e.g., laser, electron-beam, ion-beam, etc.) |
128 |
| 216/87 |
Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to ethching to change properties of substrate toward the etchant |
225 |
| 216/92 |
Projecting etchant against a moving substrate or controlling the angle or pattern projection of the etchant or controlling the angle or pattern of movement of the substrate |
243 |
| 216/93 |
Recycling, regenerating, or rejunevating etchant |
184 |
| 216/90 |
Relative movement between the substrate and a confined pool of etchant |
171 |
| 216/91 |
Rotating, repeated dipping, or advancing movement of substrate |
145 |
| 216/95 |
Substrate is multilayered |
146 |
| 216/88 |
Using film of etchant between a stationary surface and a moving surface (e.g., chemical lapping, etc.) |
478 |
| 216/89 |
Etchant contains solid particle (e.g., abrasive for polishing, etc.) |
404 |
| 216/84 |
With measuring, testing, or inspecting |
207 |
| 216/86 |
By electrical means or of an electrical property |
103 |
| 216/85 |
By optical means or of an optical property |
134 |
| 216/54 |
Pattern or design applied by transfer |
144 |
| 216/38 |
Planarizing a nonplanar surface |
404 |
