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Class Information
Number: 148/DIG.94
Name: Metal treatment > Laser beam treatment of compound devices
Description:










Patents under this class:

Patent Number Title Of Patent Date Issued
6210479 Product and process for forming a semiconductor structure on a host substrate Apr. 3, 2001
6168967 Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms Jan. 2, 2001
5897381 Method of forming a layer and semiconductor substrate Apr. 27, 1999
5840592 Method of improving the spectral response and dark current characteristics of an image gathering detector Nov. 24, 1998
5153148 Method of fabricating semiconductor lasers Oct. 6, 1992
5100832 Process for preparing epitaxial compound semiconductor Mar. 31, 1992
5024967 Doping procedures for semiconductor devices Jun. 18, 1991
5013684 Buried disordering sources in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth May. 7, 1991
4962057 Method of in situ photo induced evaporation enhancement of compound thin films during or after epitaxial growth Oct. 9, 1990
4950621 Method of growing crystalline layers by vapor phase epitaxy Aug. 21, 1990
4950615 Method and making group IIB metal - telluride films and solar cells Aug. 21, 1990
RE33274 Selective disordering of well structures by laser annealing Jul. 24, 1990
4933299 Method of forming 3-D structures using MOVCD with in-situ photoetching Jun. 12, 1990
4895812 Method of making ohmic contact to ferroelectric semiconductors Jan. 23, 1990
4885260 Method of laser enhanced vapor phase growth for compound semiconductor Dec. 5, 1989
4859625 Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy Aug. 22, 1989
4855256 Method of manufacturing masked semiconductor laser Aug. 8, 1989
4843031 Method of fabricating compound semiconductor laser using selective irradiation Jun. 27, 1989
4835116 Annealing method for III-V deposition May. 30, 1989
4764485 Method for producing via holes in polymer dielectrics Aug. 16, 1988
4743569 Two step rapid thermal anneal of implanted compound semiconductor May. 10, 1988
4742013 Process for the production of a semiconductor laser with tape geometry and laser obtained by this process May. 3, 1988
4707909 Manufacture of trimmable high value polycrystalline silicon resistors Nov. 24, 1987
4706376 Method of making semiconductor photoelectric conversion device Nov. 17, 1987
4706377 Passivation of gallium arsenide by nitrogen implantation Nov. 17, 1987
4681640 Laser-induced chemical vapor deposition of germanium and doped-germanium films Jul. 21, 1987
4661168 Method of integrating infrared sensitive image recording element with CCD on same substrate Apr. 28, 1987
4654090 Selective disordering of well structures by laser annealing Mar. 31, 1987
4649624 Fabrication of semiconductor devices in recrystallized semiconductor films on electrooptic substrates Mar. 17, 1987
4645687 Deposition of III-V semiconductor materials Feb. 24, 1987
4463028 Method for preparing composite or elementary semi-conducting polycrystalline films Jul. 31, 1984
4407061 Fabrication procedure using arsenate glasses Oct. 4, 1983
4359485 Radiation induced deposition of metal on semiconductor surfaces Nov. 16, 1982
4261764 Laser method for forming low-resistance ohmic contacts on semiconducting oxides Apr. 14, 1981
4071383 Process for fabrication of dielectric optical waveguide devices Jan. 31, 1978











 
 
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