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Class Information
Number: 148/DIG.9
Name: Metal treatment > Bi-mos

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8217426 Bipolar transistors with resistors Jul. 10, 2012
7351620 Methods of forming semiconductor constructions Apr. 1, 2008
6124180 BiCMOS process for counter doped collector Sep. 26, 2000
6001701 Process for making bipolar having graded or modulated collector Dec. 14, 1999
6001676 Semiconductor integrated circuit apparatus and associated fabrication Dec. 14, 1999
5926705 Method for manufacturing a semiconductor device with stabilization of a bipolar transistor and a schottky barrier diode Jul. 20, 1999
5904519 Method of manufacturing Bi-CMOS May. 18, 1999
5869366 Method for forming voltage clamp having a breakdown voltage of 40 Vdc Feb. 9, 1999
5866446 Method of manufacturing bimos device Feb. 2, 1999
5856218 Bipolar transistor formed by a high energy ion implantation method Jan. 5, 1999
5824560 Method of manufacturing a semiconductor device with BICMOS circuit Oct. 20, 1998
5804476 Method of forming BiCMOS devices having mosfet and bipolar sections therein Sep. 8, 1998
5789285 Manufacturing method for BIMOS Aug. 4, 1998
5780329 Process for fabricating a moderate-depth diffused emitter bipolar transistor in a BICMOS device without using an additional mask Jul. 14, 1998
5766990 Method of manufacturing a high speed bipolar transistor in a CMOS process Jun. 16, 1998
5696006 Method of manufacturing Bi-MOS device Dec. 9, 1997
5691226 Method of manufacturing BICMOS integrated circuits Nov. 25, 1997
5691224 Method of making BiCMOS circuit Nov. 25, 1997
5681765 Process for fabricating single polysilicon high performance BICMOS Oct. 28, 1997
5652154 Method for manufacturing BiMOS device Jul. 29, 1997
5648279 Method of manufacturing bipolar transistor having emitter region and external base region formed in self alignment manner Jul. 15, 1997
5646055 Method for making bipolar transistor Jul. 8, 1997
5643809 Method for making high speed poly-emitter bipolar transistor Jul. 1, 1997
5643810 Methods of forming BiCMOS semiconductor devices Jul. 1, 1997
5641692 Method for producing a Bi-MOS device Jun. 24, 1997
5610087 Method for fabricating narrow base width lateral bipolar junction transistor, on SOI layer Mar. 11, 1997
5607866 Method of fabricating a semiconductor device having silicide layers for electrodes Mar. 4, 1997
5597757 Method of manufacturing a semiconductor device including bipolar and MOS transistors Jan. 28, 1997
5567631 Method of forming gate spacer to control the base width of a lateral bipolar junction transistor using SOI technology Oct. 22, 1996
5556796 Self-alignment technique for forming junction isolation and wells Sep. 17, 1996
5538908 Method for manufacturing a BiCMOS semiconductor device Jul. 23, 1996
5538908 Method for manufacturing a BiCMOS semiconductor device Jul. 23, 1996
5525530 Method of manufacturing a semiconductor device Jun. 11, 1996
5523242 Method of manufacturing a BiMOS device Jun. 4, 1996
5516718 Method of making BI-CMOS integrated circuit having a polysilicon emitter May. 14, 1996
5508213 Method of manufacturing a semiconductor device in which a semiconductor zone is formed through diffusion from a strip of polycrystalline silicon Apr. 16, 1996
5506156 Method of fabricating bipolar transistor having high speed and MOS transistor having small size Apr. 9, 1996
5459083 Method for making BIMOS device having a bipolar transistor and a MOS triggering transistor Oct. 17, 1995
5455189 Method of forming BICMOS structures Oct. 3, 1995
5449627 Lateral bipolar transistor and FET compatible process for making it Sep. 12, 1995
5441903 BiCMOS process for supporting merged devices Aug. 15, 1995
5439833 Method of making truly complementary and self-aligned bipolar and CMOS transistor structures with minimized base and gate resistances and parasitic capacitance Aug. 8, 1995
5429959 Process for simultaneously fabricating a bipolar transistor and a field-effect transistor Jul. 4, 1995
5422290 Method of fabricating BiCMOS structures Jun. 6, 1995
5407844 Process for simultaneously fabricating an insulated gate field-effect transistor and a bipolar transistor Apr. 18, 1995
5407841 CBiCMOS fabrication method using sacrificial gate poly Apr. 18, 1995
5405790 Method of forming a semiconductor structure having MOS, bipolar, and varactor devices Apr. 11, 1995
5403758 Process of forming a bipolar type semiconductor device Apr. 4, 1995
5399509 Method of manufacturing a bipolar transistor Mar. 21, 1995
5391504 Method for producing integrated quasi-complementary bipolar transistors and field effect transistors Feb. 21, 1995

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