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Class Information
Number: 148/DIG.84
Name: Metal treatment > Ion implantation of compound devices
Description:










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
5683937 Method of making a semiconductor device Nov. 4, 1997
5358877 Soft proton isolation process for an acoustic charge transport integrated circuit Oct. 25, 1994
5294557 Implanting impurities in semiconductors and semiconductor implanted with impurities Mar. 15, 1994
5252499 Wide band-gap semiconductors having low bipolar resistivity and method of formation Oct. 12, 1993
5224249 Corrosion prevention of honeycomb core panel construction using ion implantation Jul. 6, 1993
5219632 Compound semiconductor single crystals and the method for making the crystals, and semiconductor devices employing the crystals Jun. 15, 1993
5196358 Method of manufacturing InP junction FETS and junction HEMTS using dual implantation and double nitride layers Mar. 23, 1993
5145792 Method of fabricating a semiconductor optical device Sep. 8, 1992
5139960 Interstitital doping in III-V semiconductors to avoid or suppress DX center formation Aug. 18, 1992
5073507 Producing a plasma containing beryllium and beryllium fluoride Dec. 17, 1991
5019519 Method for the manufacture of optical semiconductor device May. 28, 1991
5019524 Method of manufacturing a heterojunction bipolar transistor May. 28, 1991
4983540 Method of manufacturing devices having superlattice structures Jan. 8, 1991
4983534 Semiconductor device and method of manufacturing the same Jan. 8, 1991
4962050 GaAs FET manufacturing process employing channel confining layers Oct. 9, 1990
RE33274 Selective disordering of well structures by laser annealing Jul. 24, 1990
4933301 Method of forming a semiconductor laser Jun. 12, 1990
4898834 Open-tube, benign-environment annealing method for compound semiconductors Feb. 6, 1990
4897361 Patterning method in the manufacture of miniaturized devices Jan. 30, 1990
4882235 Liquid crystal cell window Nov. 21, 1989
4879259 Rapid thermal annealing of gallium arsenide with trimethyl arsenic overpressure Nov. 7, 1989
4865923 Selective intermixing of layered structures composed of thin solid films Sep. 12, 1989
4863877 Ion implantation and annealing of compound semiconductor layers Sep. 5, 1989
4820651 Method of treating bodies of III-V compound semiconductor material Apr. 11, 1989
4818712 Aluminum liftoff masking process and product Apr. 4, 1989
4728616 Ballistic heterojunction bipolar transistor Mar. 1, 1988
4706377 Passivation of gallium arsenide by nitrogen implantation Nov. 17, 1987
H368 Field-effect transistor Nov. 3, 1987
4701422 Method of adjusting threshold voltage subsequent to fabrication of transistor Oct. 20, 1987
4694563 Process for making Schottky-barrier gate FET Sep. 22, 1987
4679305 Method of manufacturing a heterojunction bipolar transistor having self-aligned emitter and base and selective isolation regions Jul. 14, 1987
4679298 Method of fabrication of GaAs complementary enhancement mode junction field effect transistor Jul. 14, 1987
4676840 Method of capless annealing for group III-V compound semiconductor substrate Jun. 30, 1987
4654960 Method for fabricating GaAs bipolar integrated circuit devices Apr. 7, 1987
4654090 Selective disordering of well structures by laser annealing Mar. 31, 1987
4642879 Method of making self-aligned FET using GaAs substrate and spatially controlled implanted channel region Feb. 17, 1987
4640003 Method of making planar geometry Schottky diode using oblique evaporation and normal incidence proton bombardment Feb. 3, 1987
4639275 Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor Jan. 27, 1987
4617724 Process for fabricating heterojunction bipolar transistor with low base resistance Oct. 21, 1986
4615766 Silicon cap for annealing gallium arsenide Oct. 7, 1986
4611388 Method of forming an indium phosphide-boron phosphide heterojunction bipolar transistor Sep. 16, 1986
4610731 Shallow impurity neutralization Sep. 9, 1986
4602965 Method of making FETs in GaAs by dual species implantation of silicon and boron Jul. 29, 1986
4599791 Method of making integrated circuits employing proton-bombarded AlGaAs layers Jul. 15, 1986
4597165 Method of making integrated circuits employing ion-bombarded InP layers Jul. 1, 1986
4595423 Method of homogenizing a compound semiconductor crystal prior to implantation Jun. 17, 1986
4593457 Method for making gallium arsenide NPN transistor with self-aligned base enhancement to emitter region and metal contact Jun. 10, 1986
4593305 Heterostructure bipolar transistor Jun. 3, 1986
4593307 High temperature stable ohmic contact to gallium arsenide Jun. 3, 1986
4589006 Germanium detector passivated with hydrogenated amorphous germanium May. 13, 1986

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