| |
 |
|
Class Information
Number: 148/DIG.77
Name: Metal treatment > Implantation of silicon on sapphire
Description:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6664150 |
Active well schemes for SOI technology |
Dec. 16, 2003 |
| 6124185 |
Method for producing a semiconductor device using delamination |
Sep. 26, 2000 |
| 5723348 |
Method of making a light-emitting device |
Mar. 3, 1998 |
| 5614433 |
Method of fabricating low leakage SOI integrated circuits |
Mar. 25, 1997 |
| 5420048 |
Manufacturing method for SOI-type thin film transistor |
May. 30, 1995 |
| 5374567 |
Operational amplifier using bipolar junction transistors in silicon-on-sapphire |
Dec. 20, 1994 |
| H948 |
Semiconductor-semiconductor compound insulator-insulator structures |
Aug. 6, 1991 |
| 4946799 |
Process for making high performance silicon-on-insulator transistor with body node to source node connection |
Aug. 7, 1990 |
| 4863878 |
Method of making silicon on insalator material using oxygen implantation |
Sep. 5, 1989 |
| 4753895 |
Method of forming low leakage CMOS device on insulating substrate |
Jun. 28, 1988 |
| 4751193 |
Method of making SOI recrystallized layers by short spatially uniform light pulses |
Jun. 14, 1988 |
| 4706378 |
Method of making vertical bipolar transistor having base above buried nitride dielectric formed by deep implantation |
Nov. 17, 1987 |
| 4704784 |
Method of making thin film field effect transistors for a liquid crystal display device |
Nov. 10, 1987 |
| 4683637 |
Forming depthwise isolation by selective oxygen/nitrogen deep implant and reaction annealing |
Aug. 4, 1987 |
| 4659392 |
Selective area double epitaxial process for fabricating silicon-on-insulator structures for use with MOS devices and integrated circuits |
Apr. 21, 1987 |
| 4653176 |
Method of simultaneously manufacturing semiconductor regions having different dopings |
Mar. 31, 1987 |
| 4619034 |
Method of making laser recrystallized silicon-on-insulator nonvolatile memory device |
Oct. 28, 1986 |
| 4588447 |
Method of eliminating p-type electrical activity and increasing channel mobility of Si-implanted and recrystallized SOS films |
May. 13, 1986 |
| 4581620 |
Semiconductor device of non-single crystal structure |
Apr. 8, 1986 |
| 4540452 |
Process for manufacturing a semi-conductor device of the type comprising at least one silicon layer deposited on an insulating substrate |
Sep. 10, 1985 |
| 4494996 |
Implanting yttrium and oxygen ions at semiconductor/insulator interface |
Jan. 22, 1985 |
| 4317686 |
Method of manufacturing field-effect transistors by forming double insulative buried layers by ion-implantation |
Mar. 2, 1982 |
| 4178191 |
Process of making a planar MOS silicon-on-insulating substrate device |
Dec. 11, 1979 |
| 4177084 |
Method for producing a low defect layer of silicon-on-sapphire wafer |
Dec. 4, 1979 |
| 4079507 |
Method of making silicon-insulator-polysilicon infrared imaging device with orientially etched detectors |
Mar. 21, 1978 |
|
|
|
