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Class Information
Number: 148/DIG.77
Name: Metal treatment > Implantation of silicon on sapphire
Description:










Patents under this class:

Patent Number Title Of Patent Date Issued
6664150 Active well schemes for SOI technology Dec. 16, 2003
6124185 Method for producing a semiconductor device using delamination Sep. 26, 2000
5723348 Method of making a light-emitting device Mar. 3, 1998
5614433 Method of fabricating low leakage SOI integrated circuits Mar. 25, 1997
5420048 Manufacturing method for SOI-type thin film transistor May. 30, 1995
5374567 Operational amplifier using bipolar junction transistors in silicon-on-sapphire Dec. 20, 1994
H948 Semiconductor-semiconductor compound insulator-insulator structures Aug. 6, 1991
4946799 Process for making high performance silicon-on-insulator transistor with body node to source node connection Aug. 7, 1990
4863878 Method of making silicon on insalator material using oxygen implantation Sep. 5, 1989
4753895 Method of forming low leakage CMOS device on insulating substrate Jun. 28, 1988
4751193 Method of making SOI recrystallized layers by short spatially uniform light pulses Jun. 14, 1988
4706378 Method of making vertical bipolar transistor having base above buried nitride dielectric formed by deep implantation Nov. 17, 1987
4704784 Method of making thin film field effect transistors for a liquid crystal display device Nov. 10, 1987
4683637 Forming depthwise isolation by selective oxygen/nitrogen deep implant and reaction annealing Aug. 4, 1987
4659392 Selective area double epitaxial process for fabricating silicon-on-insulator structures for use with MOS devices and integrated circuits Apr. 21, 1987
4653176 Method of simultaneously manufacturing semiconductor regions having different dopings Mar. 31, 1987
4619034 Method of making laser recrystallized silicon-on-insulator nonvolatile memory device Oct. 28, 1986
4588447 Method of eliminating p-type electrical activity and increasing channel mobility of Si-implanted and recrystallized SOS films May. 13, 1986
4581620 Semiconductor device of non-single crystal structure Apr. 8, 1986
4540452 Process for manufacturing a semi-conductor device of the type comprising at least one silicon layer deposited on an insulating substrate Sep. 10, 1985
4494996 Implanting yttrium and oxygen ions at semiconductor/insulator interface Jan. 22, 1985
4317686 Method of manufacturing field-effect transistors by forming double insulative buried layers by ion-implantation Mar. 2, 1982
4178191 Process of making a planar MOS silicon-on-insulating substrate device Dec. 11, 1979
4177084 Method for producing a low defect layer of silicon-on-sapphire wafer Dec. 4, 1979
4079507 Method of making silicon-insulator-polysilicon infrared imaging device with orientially etched detectors Mar. 21, 1978











 
 
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