| Patent Number |
Title Of Patent |
Date Issued |
| 5870021 |
Annealing magnetic elements for stable mechanical properties |
Feb. 9, 1999 |
| 5563094 |
Buried reverse bias junction configurations in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth and device structures utilizing the same |
Oct. 8, 1996 |
| 5519193 |
Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation |
May. 21, 1996 |
| 5409867 |
Method of producing polycrystalline semiconductor thin film |
Apr. 25, 1995 |
| 5284795 |
Thermal annealing of semiconductor devices |
Feb. 8, 1994 |
| 5153148 |
Method of fabricating semiconductor lasers |
Oct. 6, 1992 |
| 5110404 |
Method for heat processing of silicon |
May. 5, 1992 |
| 5110758 |
Method of heat augmented resistor trimming |
May. 5, 1992 |
| 5079187 |
Method for processing semiconductor materials |
Jan. 7, 1992 |
| 5066610 |
Capping technique for zone-melting recrystallization of insulated semiconductor films |
Nov. 19, 1991 |
| 5024967 |
Doping procedures for semiconductor devices |
Jun. 18, 1991 |
| 5011794 |
Procedure for rapid thermal annealing of implanted semiconductors |
Apr. 30, 1991 |
| 4981549 |
Method and apparatus for growing silicon crystals |
Jan. 1, 1991 |
| 4962057 |
Method of in situ photo induced evaporation enhancement of compound thin films during or after epitaxial growth |
Oct. 9, 1990 |
| 4960721 |
Method for purifying group II-IV compound semiconductors |
Oct. 2, 1990 |
| 4957880 |
Method for producing semiconductor device including a refractory metal pattern |
Sep. 18, 1990 |
| 4933299 |
Method of forming 3-D structures using MOVCD with in-situ photoetching |
Jun. 12, 1990 |
| 4916809 |
Method for programmable laser connection of two superimposed conductors of the interconnect system of an integrated circuit |
Apr. 17, 1990 |
| 4902642 |
Epitaxial process for silicon on insulator structure |
Feb. 20, 1990 |
| 4891335 |
Semiconductor substrate heater and reactor process and apparatus |
Jan. 2, 1990 |
| 4888302 |
Method of reduced stress recrystallization |
Dec. 19, 1989 |
| 4855256 |
Method of manufacturing masked semiconductor laser |
Aug. 8, 1989 |
| 4851358 |
Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing |
Jul. 25, 1989 |
| 4843032 |
Process for producing a DFB laser with a diffraction grating superlattice |
Jun. 27, 1989 |
| 4843030 |
Semiconductor processing by a combination of photolytic, pyrolytic and catalytic processes |
Jun. 27, 1989 |
| 4843031 |
Method of fabricating compound semiconductor laser using selective irradiation |
Jun. 27, 1989 |
| 4840922 |
Method of manufacturing masked semiconductor laser |
Jun. 20, 1989 |
| 4834809 |
Three dimensional semiconductor on insulator substrate |
May. 30, 1989 |
| 4784963 |
Method for light-induced photolytic deposition simultaneously independently controlling at least two different frequency radiations during the process |
Nov. 15, 1988 |
| 4778775 |
Buried interconnect for silicon on insulator structure |
Oct. 18, 1988 |
| 4774195 |
Process for the manufacture of semiconductor layers on semiconductor bodies or for the diffusion of impurities from compounds into semiconductor bodies utilizing an additional generation of ac |
Sep. 27, 1988 |
| 4757030 |
Method of making group IV single crystal layers on group III-V substrates using solid phase epitaxial growth |
Jul. 12, 1988 |
| 4707909 |
Manufacture of trimmable high value polycrystalline silicon resistors |
Nov. 24, 1987 |
| 4604159 |
Method of forming a large number of monocrystalline semiconductor regions on the surface of an insulator |
Aug. 5, 1986 |
| 4559086 |
Backside gettering of silicon wafers utilizing selectively annealed single crystal silicon portions disposed between and extending into polysilicon portions |
Dec. 17, 1985 |
| 4555273 |
Furnace transient anneal process |
Nov. 26, 1985 |
| 4343829 |
Method of fabricating single-crystalline silicon films |
Aug. 10, 1982 |
| 4308078 |
Method of producing single-crystal semiconductor films by laser treatment |
Dec. 29, 1981 |
| 4187126 |
Growth-orientation of crystals by raster scanning electron beam |
Feb. 5, 1980 |
| 4174521 |
PROM electrically written by solid phase epitaxy |
Nov. 13, 1979 |
| 4115163 |
Method of growing epitaxial semiconductor films utilizing radiant heating |
Sep. 19, 1978 |
| 4027053 |
Method of producing polycrystalline silicon ribbon |
May. 31, 1977 |
| 4012242 |
Liquid epitaxy technique |
Mar. 15, 1977 |
