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Class Information
Number: 148/DIG.7
Name: Metal treatment > Autodoping
Description:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5688710 |
Method of fabricating a twin - well CMOS device |
Nov. 18, 1997 |
| 5525529 |
Method for reducing dopant diffusion |
Jun. 11, 1996 |
| 5461002 |
Method of making diffused doped areas for semiconductor components |
Oct. 24, 1995 |
| 5047365 |
Method for manufacturing a heterostructure transistor having a germanium layer on gallium arsenide using molecular beam epitaxial growth |
Sep. 10, 1991 |
| 4894349 |
Two step vapor-phase epitaxial growth process for control of autodoping |
Jan. 16, 1990 |
| 4859626 |
Method of forming thin epitaxial layers using multistep growth for autodoping control |
Aug. 22, 1989 |
| 4855250 |
Method of manufacturing a semiconductor laser with autodoping control |
Aug. 8, 1989 |
| 4687682 |
Back sealing of silicon wafers |
Aug. 18, 1987 |
| 4668330 |
Furnace contamination |
May. 26, 1987 |
| 4662956 |
Method for prevention of autodoping of epitaxial layers |
May. 5, 1987 |
| 4571275 |
Method for minimizing autodoping during epitaxial deposition utilizing a graded pattern subcollector |
Feb. 18, 1986 |
| 4554030 |
Method of manufacturing a semiconductor device by means of a molecular beam technique |
Nov. 19, 1985 |
| 4106044 |
Field effect transistor having unsaturated characteristics |
Aug. 8, 1978 |
| 4075044 |
Method of producing a siliceous cover layer on a semiconductor element by centrifugal coating utilizing a mixture of silica emulsions |
Feb. 21, 1978 |
| 4000020 |
Vapor epitaxial method for depositing gallium arsenide phosphide on germanium and silicon substrate wafers |
Dec. 28, 1976 |
| 3986192 |
High efficiency gallium arsenide impatt diodes |
Oct. 12, 1976 |
| 3982974 |
Compensation of autodoping in the manufacture of integrated circuits |
Sep. 28, 1976 |
| 3974002 |
MBE growth: gettering contaminants and fabricating heterostructure junction lasers |
Aug. 10, 1976 |
| 3967307 |
Lateral bipolar transistor for integrated circuits and method for forming the same |
Jun. 29, 1976 |
| 3956037 |
Method of forming semiconductor layers by vapor growth |
May. 11, 1976 |
| 3945856 |
Method of ion implantation through an electrically insulative material |
Mar. 23, 1976 |
| 3945864 |
Method of growing thick expitaxial layers of silicon |
Mar. 23, 1976 |
| 3943013 |
Triac with gold diffused boundary |
Mar. 9, 1976 |
| 3930908 |
Accurate control during vapor phase epitaxy |
Jan. 6, 1976 |
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