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Class Information
Number: 148/DIG.67
Name: Metal treatment > Graded energy gap

Patents under this class:

Patent Number Title Of Patent Date Issued
5810924 Low defect density/arbitrary lattice constant heteroepitaxial layers Sep. 22, 1998
5484737 Method for fabricating bipolar transistor Jan. 16, 1996
RE33671 Method of making high mobility multilayered heterojunction device employing modulated doping Aug. 20, 1991
4944811 Material for light emitting element and method for crystal growth thereof Jul. 31, 1990
4865655 Gallium arsenide phosphide mixed crystal epitaxial wafer with a graded buffer layer Sep. 12, 1989
4861393 Semiconductor heterostructures having Ge.sub.x Si.sub.1-x layers on Si utilizing molecular beam epitaxy Aug. 29, 1989
4716445 Heterojunction bipolar transistor having a base region of germanium Dec. 29, 1987
4644381 I.sup.2 L heterostructure bipolar transistors and method of making the same Feb. 17, 1987
4548658 Growth of lattice-graded epilayers Oct. 22, 1985
4468851 Process for making a heterojunction source-drain insulated gate field-effect transistors utilizing diffusion to form the lattice Sep. 4, 1984
4357183 Heteroepitaxy of germanium silicon on silicon utilizing alloying control Nov. 2, 1982
4252576 Epitaxial wafer for use in production of light emitting diode Feb. 24, 1981
4213781 Deposition of solid semiconductor compositions and novel semiconductor materials Jul. 22, 1980
4166880 Solar energy device Sep. 4, 1979
4152535 Continuous process for fabricating solar cells and the product produced thereby May. 1, 1979
4088515 Method of making semiconductor superlattices free of misfit dislocations May. 9, 1978
4067038 Substrate fed logic and method of fabrication Jan. 3, 1978
4053919 High speed infrared detector Oct. 11, 1977
4012243 Method of fabricating multicolor light displays utilizing etch and refill techniques Mar. 15, 1977
4011113 Method of making injection lasers by epitaxial deposition and selective etching Mar. 8, 1977
4010045 Process for production of III-V compound crystals Mar. 1, 1977
4007074 Method of making an epitaxial growth layer of GaAs.sub.1-x P.sub.x compound semiconductor Feb. 8, 1977
4000020 Vapor epitaxial method for depositing gallium arsenide phosphide on germanium and silicon substrate wafers Dec. 28, 1976
3993533 Method for making semiconductors for solar cells Nov. 23, 1976
3982207 Quantum effects in heterostructure lasers Sep. 21, 1976
3979271 Deposition of solid semiconductor compositions and novel semiconductor materials Sep. 7, 1976
3978428 Buried-heterostructure diode injection laser Aug. 31, 1976
3976872 Gallium phosphide photodetector having an as-grown surface and producing an output from radiation having energies of 2.2 eV to 3.8 eV Aug. 24, 1976
3975218 Process for production of III-V compound epitaxial crystals Aug. 17, 1976
3966513 Method of growing by epitaxy from the vapor phase a material on substrate of a material which is not stable in air Jun. 29, 1976
3963538 Two stage heteroepitaxial deposition process for GaP/Si Jun. 15, 1976
3964089 Junction transistor with linearly graded impurity concentration in the high resistivity portion of its collector zone Jun. 15, 1976
3963539 Two stage heteroepitaxial deposition process for GaAsP/Si LED's Jun. 15, 1976
3961996 Process of producing semiconductor laser device Jun. 8, 1976
3962716 Reduction of dislocations in multilayer structures of zinc-blend materials Jun. 8, 1976
3958263 Stress reduction in AlGaAs-AlGaAsP multilayer structures May. 18, 1976
3958265 Semiconductor light-emitting diode and method for producing same May. 18, 1976
3951698 Dual use of epitaxy seed crystal as tube input window and cathode structure base Apr. 20, 1976
3951968 (2-6-Oxymethylene) morpholino (4,3a) benzimidazoles Apr. 20, 1976
3940784 Semiconductor device Feb. 24, 1976
3935040 Process for forming monolithic semiconductor display Jan. 27, 1976
3932883 Photocathodes Jan. 13, 1976
3930908 Accurate control during vapor phase epitaxy Jan. 6, 1976

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