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Class Information
Number: 148/DIG.66
Name: Metal treatment > Gp iii-v liquid phase epitaxy
Description:


Patents under this class:

Patent Number Title Of Patent Date Issued
5834331 Method for making III-Nitride laser and detection device Nov. 10, 1998
5707891 Method of manufacturing a light emitting diode Jan. 13, 1998
5032539 Method of manufacturing green light emitting diode Jul. 16, 1991
4966863 Method for producing a semiconductor laser device Oct. 30, 1990
4944811 Material for light emitting element and method for crystal growth thereof Jul. 31, 1990
4876210 Solution growth of lattice mismatched and solubility mismatched heterostructures Oct. 24, 1989
4870468 Semiconductor light-emitting device and method of manufacturing the same Sep. 26, 1989
4859628 Interrupted liquid phase epitaxy process Aug. 22, 1989
4849373 Growth of semi-insulating indium phosphide by liquid phase epitaxy Jul. 18, 1989
4818722 Method for generating a strip waveguide Apr. 4, 1989
4775639 Method of manufacturing Group III-V compound semiconductor solar battery Oct. 4, 1988
4671829 Manufacturing green light emitting diodes Jun. 9, 1987
4637122 Integrated quantum well lasers for wavelength division multiplexing Jan. 20, 1987
4597166 Semiconductor substrate and method for manufacturing semiconductor device using the same Jul. 1, 1986
4451691 Three-terminal ternary III-V multicolor solar cells and process of fabrication May. 29, 1984
3976872 Gallium phosphide photodetector having an as-grown surface and producing an output from radiation having energies of 2.2 eV to 3.8 eV Aug. 24, 1976
3962716 Reduction of dislocations in multilayer structures of zinc-blend materials Jun. 8, 1976
3958263 Stress reduction in AlGaAs-AlGaAsP multilayer structures May. 18, 1976
3958265 Semiconductor light-emitting diode and method for producing same May. 18, 1976
3932883 Photocathodes Jan. 13, 1976



 
 
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