| Patent Number |
Title Of Patent |
Date Issued |
| 7501331 |
Low-temperature metal-induced crystallization of silicon-germanium films |
Mar. 10, 2009 |
| 5997638 |
Localized lattice-mismatch-accomodation dislocation network epitaxy |
Dec. 7, 1999 |
| 5906708 |
Silicon-germanium-carbon compositions in selective etch processes |
May. 25, 1999 |
| 5846867 |
Method of producing Si-Ge base heterojunction bipolar device |
Dec. 8, 1998 |
| 5616515 |
Silicon oxide germanium resonant tunneling |
Apr. 1, 1997 |
| 5521108 |
Process for making a conductive germanium/silicon member with a roughened surface thereon suitable for use in an integrated circuit structure |
May. 28, 1996 |
| 5484737 |
Method for fabricating bipolar transistor |
Jan. 16, 1996 |
| 5330929 |
Method of making a six transistor static random access memory cell |
Jul. 19, 1994 |
| 5326721 |
Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer |
Jul. 5, 1994 |
| 5312766 |
Method of providing lower contact resistance in MOS transistors |
May. 17, 1994 |
| 5296387 |
Method of providing lower contact resistance in MOS transistor structures |
Mar. 22, 1994 |
| 5281299 |
Method for manufacturing a crystal with a lattice parameter gradient |
Jan. 25, 1994 |
| 5281552 |
MOS fabrication process, including deposition of a boron-doped diffusion source layer |
Jan. 25, 1994 |
| 5250452 |
Deposition of germanium thin films on silicon dioxide employing interposed polysilicon layer |
Oct. 5, 1993 |
| 5242847 |
Selective deposition of doped silion-germanium alloy on semiconductor substrate |
Sep. 7, 1993 |
| 5183778 |
Method of producing a semiconductor device |
Feb. 2, 1993 |
| 5180684 |
Semiconductor growth process |
Jan. 19, 1993 |
| 5089428 |
Method for forming a germanium layer and a heterojunction bipolar transistor |
Feb. 18, 1992 |
| 4983536 |
Method of fabricating junction field effect transistor |
Jan. 8, 1991 |
| 4975387 |
Formation of epitaxial si-ge heterostructures by solid phase epitaxy |
Dec. 4, 1990 |
| 4962051 |
Method of forming a defect-free semiconductor layer on insulator |
Oct. 9, 1990 |
| 4891329 |
Method of forming a nonsilicon semiconductor on insulator structure |
Jan. 2, 1990 |
| 4876210 |
Solution growth of lattice mismatched and solubility mismatched heterostructures |
Oct. 24, 1989 |
| 4861393 |
Semiconductor heterostructures having Ge.sub.x Si.sub.1-x layers on Si utilizing molecular beam epitaxy |
Aug. 29, 1989 |
| 4857270 |
Process for manufacturing silicon-germanium alloys |
Aug. 15, 1989 |
| 4824798 |
Method of introducing impurity species into a semiconductor structure from a deposited source |
Apr. 25, 1989 |
| 4757030 |
Method of making group IV single crystal layers on group III-V substrates using solid phase epitaxial growth |
Jul. 12, 1988 |
| 4707216 |
Semiconductor deposition method and device |
Nov. 17, 1987 |
| 4588451 |
Metal organic chemical vapor deposition of 111-v compounds on silicon |
May. 13, 1986 |
| 4561916 |
Method of growth of compound semiconductor |
Dec. 31, 1985 |
| 4551394 |
Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs |
Nov. 5, 1985 |
| 4459163 |
Amorphous semiconductor method |
Jul. 10, 1984 |
| 4220488 |
Gas-phase process for the production of an epitaxial layer of indum phosphide |
Sep. 2, 1980 |
| 4213781 |
Deposition of solid semiconductor compositions and novel semiconductor materials |
Jul. 22, 1980 |
| 4171235 |
Process for fabricating heterojunction structures utilizing a double chamber vacuum deposition system |
Oct. 16, 1979 |
| 4139858 |
Solar cell with a gallium nitride electrode |
Feb. 13, 1979 |
| 4113531 |
Process for fabricating polycrystalline InP-CdS solar cells |
Sep. 12, 1978 |
| 3984857 |
Heteroepitaxial displays |
Oct. 5, 1976 |
| 3979271 |
Deposition of solid semiconductor compositions and novel semiconductor materials |
Sep. 7, 1976 |
| 3963538 |
Two stage heteroepitaxial deposition process for GaP/Si |
Jun. 15, 1976 |
| 3963539 |
Two stage heteroepitaxial deposition process for GaAsP/Si LED's |
Jun. 15, 1976 |
| 3960619 |
Process for preparing layers of silicon carbide on a silicon substrate |
Jun. 1, 1976 |
