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Class Information
Number: 148/DIG.5
Name: Metal treatment > Antimonides of gallium or indium
Description:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5459096 |
Process for fabricating a semiconductor device using dual planarization layers |
Oct. 17, 1995 |
| 5275966 |
Low temperature process for producing antimony-containing semiconductor materials |
Jan. 4, 1994 |
| 5104825 |
Method of producing a semiconductor device |
Apr. 14, 1992 |
| 5091335 |
MBE growth technology for high quality strained III-V layers |
Feb. 25, 1992 |
| 5017517 |
Method of fabricating semiconductor device using an Sb protection layer |
May. 21, 1991 |
| 5008215 |
Process for preparing high sensitivity semiconductive magnetoresistance element |
Apr. 16, 1991 |
| 4952446 |
Ultra-thin semiconductor membranes |
Aug. 28, 1990 |
| 4946735 |
Ultra-thin semiconductor membranes |
Aug. 7, 1990 |
| 4898834 |
Open-tube, benign-environment annealing method for compound semiconductors |
Feb. 6, 1990 |
| 4874438 |
Intermetallic compound semiconductor thin film and method of manufacturing same |
Oct. 17, 1989 |
| 3995303 |
Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector |
Nov. 30, 1976 |
| 3979271 |
Deposition of solid semiconductor compositions and novel semiconductor materials |
Sep. 7, 1976 |
| 3932883 |
Photocathodes |
Jan. 13, 1976 |
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