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Class Information
Number: 148/DIG.46
Name: Metal treatment > Electron beam treatment of devices
Description:










Patents under this class:

Patent Number Title Of Patent Date Issued
7037371 Method for fabricating semiconductor device May. 2, 2006
5641715 Semiconductor IC device fabricating method Jun. 24, 1997
5618760 Method of etching a pattern on a substrate using a scanning probe microscope Apr. 8, 1997
5210051 High efficiency light emitting diodes from bipolar gallium nitride May. 11, 1993
5147823 Method for forming an ultrafine metal pattern using an electron beam Sep. 15, 1992
5130273 Method for manufacturing a read only memory device using a focused ion beam to alter superconductivity Jul. 14, 1992
5120393 Method for molecular-beam epitaxial growth Jun. 9, 1992
5086015 Method of etching a semiconductor device by an ion beam Feb. 4, 1992
5075243 Fabrication of nanometer single crystal metallic CoSi.sub.2 structures on Si Dec. 24, 1991
5024969 Hybrid circuit structure fabrication methods using high energy electron beam curing Jun. 18, 1991
4983540 Method of manufacturing devices having superlattice structures Jan. 8, 1991
4847216 Process for the deposition by epitaxy of a doped material Jul. 11, 1989
4766465 Carry device for fine movement Aug. 23, 1988
4748132 Micro fabrication process for semiconductor structure using coherent electron beams May. 31, 1988
4707909 Manufacture of trimmable high value polycrystalline silicon resistors Nov. 24, 1987
4691434 Method of making electrically conductive regions in monolithic semiconductor devices as applied to a semiconductor device Sep. 8, 1987
4585489 Method of controlling lifetime of minority carriers by electron beam irradiation through semi-insulating layer Apr. 29, 1986
4521256 Method of making integrated devices having long and short minority carrier lifetimes Jun. 4, 1985
4415372 Method of making transistors by ion implantations, electron beam irradiation and thermal annealing Nov. 15, 1983
4381202 Selective epitaxy by beam energy and devices thereon Apr. 26, 1983
4377031 Method of making Schottky barrier diode by selective beam-crystallized polycrystalline/amorphous layer Mar. 22, 1983
4348804 Method of fabricating an integrated circuit device utilizing electron beam irradiation and selective oxidation Sep. 14, 1982
4327477 Electron beam annealing of metal step coverage May. 4, 1982
4238694 Healing radiation defects in semiconductors Dec. 9, 1980
4234355 Method for manufacturing a semiconductor element utilizing thermal neutron irradiation and annealing Nov. 18, 1980
4229232 Method involving pulsed beam processing of metallic and dielectric materials Oct. 21, 1980
4184896 Surface barrier tailoring of semiconductor devices utilizing scanning electron microscope produced ionizing radiation Jan. 22, 1980
4137099 Method of controlling leakage currents and reverse recovery time of rectifiers by hot electron irradiation and post-annealing treatments Jan. 30, 1979
4116717 Ion implanted eutectic gallium arsenide solar cell Sep. 26, 1978
4082958 Apparatus involving pulsed electron beam processing of semiconductor devices Apr. 4, 1978
4070205 Aluminum arsenide eutectic gallium arsenide solar cell Jan. 24, 1978
4043836 Method of manufacturing semiconductor devices Aug. 23, 1977
RE28703 Method of manufacturing a semiconductor device Feb. 3, 1976











 
 
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