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Class Information
Number: 148/DIG.41
Name: Metal treatment > Doping control in crystal growth
Description:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6423615 |
Silicon wafers for CMOS and other integrated circuits |
Jul. 23, 2002 |
| 5789273 |
Method for fabricating compound semiconductor laser |
Aug. 4, 1998 |
| 5705408 |
Method for forming semiconductor integrated circuit using monolayer epitaxial growth |
Jan. 6, 1998 |
| 5432121 |
Method for fabricating a multilayer epitaxial structure |
Jul. 11, 1995 |
| 5354708 |
Method of nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine |
Oct. 11, 1994 |
| 5294564 |
Method for the directed modulation of the composition or doping of semiconductors, notably for the making of planar type monolithic electronic components, use of the method and corresponding p |
Mar. 15, 1994 |
| 5273931 |
Method of growing epitaxial layers of N-doped II-VI semiconductor compounds |
Dec. 28, 1993 |
| 5252512 |
TEOV doping of gallium arsenide |
Oct. 12, 1993 |
| 5177025 |
Method of fabricating an ultra-thin active region for high speed semiconductor devices |
Jan. 5, 1993 |
| 5154796 |
Giant grains or single crystals of chromium and process for producing the same |
Oct. 13, 1992 |
| 5128275 |
Method for fabricating a semiconductor device including a semi-insulating semiconductor layer |
Jul. 7, 1992 |
| 5124278 |
Amino replacements for arsine, antimony and phosphine |
Jun. 23, 1992 |
| 5106763 |
Method of fabricating solar cells |
Apr. 21, 1992 |
| 5068204 |
Method of manufacturing a light emitting element |
Nov. 26, 1991 |
| 5047365 |
Method for manufacturing a heterostructure transistor having a germanium layer on gallium arsenide using molecular beam epitaxial growth |
Sep. 10, 1991 |
| 5028561 |
Method of growing p-type group II-VI material |
Jul. 2, 1991 |
| 5026661 |
Method of manufacturing zinc chalcogenide semiconductor devices using LP-MOCVD |
Jun. 25, 1991 |
| 5024967 |
Doping procedures for semiconductor devices |
Jun. 18, 1991 |
| 4999315 |
Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers |
Mar. 12, 1991 |
| 4988640 |
Method of doping and implanting using arsine, antimony, and phosphine substitutes |
Jan. 29, 1991 |
| 4952527 |
Method of making buffer layers for III-V devices using solid phase epitaxy |
Aug. 28, 1990 |
| 4939102 |
Method of growing III-V semiconductor layers with high effective hole concentration |
Jul. 3, 1990 |
| 4935381 |
Process for growing GaAs epitaxial layers |
Jun. 19, 1990 |
| 4904618 |
Process for doping crystals of wide band gap semiconductors |
Feb. 27, 1990 |
| 4883770 |
Selective NIPI doping super lattice contacts and other semiconductor device structures formed by shadow masking fabrication |
Nov. 28, 1989 |
| 4882300 |
Method of forming single crystalline magnesia spinel film |
Nov. 21, 1989 |
| 4865655 |
Gallium arsenide phosphide mixed crystal epitaxial wafer with a graded buffer layer |
Sep. 12, 1989 |
| 4859625 |
Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy |
Aug. 22, 1989 |
| 4855250 |
Method of manufacturing a semiconductor laser with autodoping control |
Aug. 8, 1989 |
| 4847216 |
Process for the deposition by epitaxy of a doped material |
Jul. 11, 1989 |
| 4839307 |
Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement |
Jun. 13, 1989 |
| 4830982 |
Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors |
May. 16, 1989 |
| 4705591 |
Pulling processes and equipment for growing silicon crystals having high and controlled carbon content |
Nov. 10, 1987 |
| 4591409 |
Control of nitrogen and/or oxygen in silicon via nitride oxide pressure during crystal growth |
May. 27, 1986 |
| 4301323 |
Lead-doped silicon with enhanced semiconductor properties |
Nov. 17, 1981 |
| 4249957 |
Copper doped polycrystalline silicon solar cell |
Feb. 10, 1981 |
| 4049478 |
Utilization of an arsenic diffused emitter in the fabrication of a high performance semiconductor device |
Sep. 20, 1977 |
| 4007074 |
Method of making an epitaxial growth layer of GaAs.sub.1-x P.sub.x compound semiconductor |
Feb. 8, 1977 |
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