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Class Information
Number: 148/DIG.40
Name: Metal treatment > Dopants, special
Description:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5770504 |
Method for increasing latch-up immunity in CMOS devices |
Jun. 23, 1998 |
| 5766695 |
Method for reducing surface layer defects in semiconductor materials having a volatile species |
Jun. 16, 1998 |
| 5707879 |
Neutron detector based on semiconductor materials |
Jan. 13, 1998 |
| 5527724 |
Method to prevent latch-up and improve breakdown volatge in SOI mosfets |
Jun. 18, 1996 |
| 5510295 |
Method for lowering the phase transformation temperature of a metal silicide |
Apr. 23, 1996 |
| 5342795 |
Method of fabricating power VFET gate-refill |
Aug. 30, 1994 |
| 5252512 |
TEOV doping of gallium arsenide |
Oct. 12, 1993 |
| 5231037 |
Method of making a power VFET device using a p+ carbon doped gate layer |
Jul. 27, 1993 |
| 5183779 |
Method for doping GaAs with high vapor pressure elements |
Feb. 2, 1993 |
| 5096856 |
In-situ doped silicon using tertiary butyl phosphine |
Mar. 17, 1992 |
| 5068204 |
Method of manufacturing a light emitting element |
Nov. 26, 1991 |
| 5045496 |
Semi-insulating cobalt doped indium phosphide grown by MOCVD |
Sep. 3, 1991 |
| 5026661 |
Method of manufacturing zinc chalcogenide semiconductor devices using LP-MOCVD |
Jun. 25, 1991 |
| 4962051 |
Method of forming a defect-free semiconductor layer on insulator |
Oct. 9, 1990 |
| 4916088 |
Method of making a low dislocation density semiconductor device |
Apr. 10, 1990 |
| 4889830 |
Zinc diffusion in the presence of cadmium into indium phosphide |
Dec. 26, 1989 |
| 4877753 |
In situ doped polysilicon using tertiary butyl phosphine |
Oct. 31, 1989 |
| 4859627 |
Group VI doping of III-V semiconductors during ALE |
Aug. 22, 1989 |
| 4845049 |
Doping III-V compound semiconductor devices with group VI monolayers using ALE |
Jul. 4, 1989 |
| 4843028 |
Method for producing a spatially periodic semiconductor layer structure |
Jun. 27, 1989 |
| 4830982 |
Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors |
May. 16, 1989 |
| H368 |
Field-effect transistor |
Nov. 3, 1987 |
| 4675709 |
Quantized layered structures with adjusted indirect bandgap transitions |
Jun. 23, 1987 |
| 4632710 |
Vapor phase epitaxial growth of carbon doped layers of Group III-V materials |
Dec. 30, 1986 |
| 4590666 |
Method for producing a bipolar transistor having a reduced base region |
May. 27, 1986 |
| 4301323 |
Lead-doped silicon with enhanced semiconductor properties |
Nov. 17, 1981 |
| 4249957 |
Copper doped polycrystalline silicon solar cell |
Feb. 10, 1981 |
| 4235651 |
Fabrication of GaAs-GaAlAs solar cells |
Nov. 25, 1980 |
| 4093957 |
SOS extrinsic infrared detector and read-out device |
Jun. 6, 1978 |
| 4049478 |
Utilization of an arsenic diffused emitter in the fabrication of a high performance semiconductor device |
Sep. 20, 1977 |
| 4027380 |
Complementary insulated gate field effect transistor structure and process for fabricating the structure |
Jun. 7, 1977 |
| 4028719 |
Array type charge extraction device for infra-red detection |
Jun. 7, 1977 |
| 4007074 |
Method of making an epitaxial growth layer of GaAs.sub.1-x P.sub.x compound semiconductor |
Feb. 8, 1977 |
| 4001056 |
Epitaxial deposition of III-V compounds containing isoelectronic impurities |
Jan. 4, 1977 |
| 3986903 |
MOSFET transistor and method of fabrication |
Oct. 19, 1976 |
| 3979235 |
Depositing doped material on a substrate |
Sep. 7, 1976 |
| 3956037 |
Method of forming semiconductor layers by vapor growth |
May. 11, 1976 |
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