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Class Information
Number: 148/DIG.4
Name: Metal treatment > Annealing, incoherent light
Description:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7553368 |
Process for manufacturing a gallium rich gallium nitride film |
Jun. 30, 2009 |
| 5773329 |
Polysilicon grown by pulsed rapid thermal annealing |
Jun. 30, 1998 |
| 5750443 |
Method of manufacturing semiconductor device |
May. 12, 1998 |
| 5529937 |
Process for fabricating thin film transistor |
Jun. 25, 1996 |
| 5387546 |
Method for manufacturing a semiconductor device |
Feb. 7, 1995 |
| 5312771 |
Optical annealing method for semiconductor layer and method for producing semiconductor device employing the same semiconductor layer |
May. 17, 1994 |
| 5306662 |
Method of manufacturing P-type compound semiconductor |
Apr. 26, 1994 |
| 5296405 |
Method for photo annealing non-single crystalline semiconductor films |
Mar. 22, 1994 |
| 5212101 |
Substitutional carbon in silicon |
May. 18, 1993 |
| 5171710 |
Method for photo annealing non-single crystalline semiconductor films |
Dec. 15, 1992 |
| 5169796 |
Process for fabricating self-aligned metal gate field effect transistors |
Dec. 8, 1992 |
| 5024962 |
Method for preventing auto-doping in the fabrication of metal gate CMOS devices |
Jun. 18, 1991 |
| 5024955 |
Variable-capacitance diode element having wide capacitance variation range |
Jun. 18, 1991 |
| 4981815 |
Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors |
Jan. 1, 1991 |
| 4971919 |
Semiconductor photoelectric conversion device and method of making the same |
Nov. 20, 1990 |
| 4963503 |
Method of manufacturing liquid crystal display device |
Oct. 16, 1990 |
| 4950614 |
Method of making a tandem type semiconductor photoelectric conversion device |
Aug. 21, 1990 |
| 4888302 |
Method of reduced stress recrystallization |
Dec. 19, 1989 |
| 4888305 |
Method for photo annealing non-single crystalline semiconductor films |
Dec. 19, 1989 |
| 4879259 |
Rapid thermal annealing of gallium arsenide with trimethyl arsenic overpressure |
Nov. 7, 1989 |
| 4851358 |
Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing |
Jul. 25, 1989 |
| 4845055 |
Rapid annealing under high pressure for use in fabrication of semiconductor device |
Jul. 4, 1989 |
| 4784975 |
Post-oxidation anneal of silicon dioxide |
Nov. 15, 1988 |
| 4752592 |
Annealing method for compound semiconductor substrate |
Jun. 21, 1988 |
| 4751193 |
Method of making SOI recrystallized layers by short spatially uniform light pulses |
Jun. 14, 1988 |
| 4743569 |
Two step rapid thermal anneal of implanted compound semiconductor |
May. 10, 1988 |
| 4661177 |
Method for doping semiconductor wafers by rapid thermal processing of solid planar diffusion sources |
Apr. 28, 1987 |
| 4585492 |
Rapid thermal annealing of silicon dioxide for reduced hole trapping |
Apr. 29, 1986 |
| 4576652 |
Incoherent light annealing of gallium arsenide substrate |
Mar. 18, 1986 |
| 4566913 |
Rapid thermal annealing of silicon dioxide for reduced electron trapping |
Jan. 28, 1986 |
| 4567058 |
Method for controlling lateral diffusion of silicon in a self-aligned TiSi.sub.2 process |
Jan. 28, 1986 |
| 4561907 |
Process for forming low sheet resistance polysilicon having anisotropic etch characteristics |
Dec. 31, 1985 |
| 4522845 |
Process for producing a layer of a metal silicide by applying multichromatic radiation |
Jun. 11, 1985 |
| 4503087 |
Process for high temperature drive-in diffusion of dopants into semiconductor wafers |
Mar. 5, 1985 |
| 4193183 |
Infrared photolithographic process for constructing self-aligned electrodes |
Mar. 18, 1980 |
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