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Class Information
Number: 148/DIG.27
Name: Metal treatment > Dichlorosilane
Description:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5643633 |
Uniform tungsten silicide films produced by chemical vapor depostiton |
Jul. 1, 1997 |
| 5558910 |
Uniform tungsten silicide films produced by chemical vapor deposition |
Sep. 24, 1996 |
| 5500249 |
Uniform tungsten silicide films produced by chemical vapor deposition |
Mar. 19, 1996 |
| 5231056 |
Tungsten silicide (WSi.sub.x) deposition process for semiconductor manufacture |
Jul. 27, 1993 |
| 5168089 |
Substantially facet-free selective epitaxial growth process |
Dec. 1, 1992 |
| 5110757 |
Formation of composite monosilicon/polysilicon layer using reduced-temperature two-step silicon deposition |
May. 5, 1992 |
| 5061644 |
Method for fabricating self-aligned semiconductor devices |
Oct. 29, 1991 |
| 4810673 |
Oxide deposition method |
Mar. 7, 1989 |
| 4637127 |
Method for manufacturing a semiconductor device |
Jan. 20, 1987 |
| 4462847 |
Fabrication of dielectrically isolated microelectronic semiconductor circuits utilizing selective growth by low pressure vapor deposition |
Jul. 31, 1984 |
| 4459163 |
Amorphous semiconductor method |
Jul. 10, 1984 |
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