| Patent Number |
Title Of Patent |
Date Issued |
| 7375012 |
Method of forming multilayer film |
May. 20, 2008 |
| 5950081 |
Method of fabricating semiconductor |
Sep. 7, 1999 |
| 5668046 |
Method of producing a semiconductor on insulating substrate, and a method of forming transistor thereon |
Sep. 16, 1997 |
| 5427976 |
Method of producing a semiconductor on insulating substrate, and a method of forming a transistor thereon |
Jun. 27, 1995 |
| 5413956 |
Method for producing a semiconductor laser device |
May. 9, 1995 |
| 5374587 |
Method of manufacturing optical semiconductor element |
Dec. 20, 1994 |
| 5354709 |
Method of making a lattice mismatched heterostructure optical waveguide |
Oct. 11, 1994 |
| 5320972 |
Method of forming a bipolar transistor |
Jun. 14, 1994 |
| 5294564 |
Method for the directed modulation of the composition or doping of semiconductors, notably for the making of planar type monolithic electronic components, use of the method and corresponding p |
Mar. 15, 1994 |
| 5281283 |
Group III-V compound crystal article using selective epitaxial growth |
Jan. 25, 1994 |
| 5270253 |
Method of producing semiconductor device |
Dec. 14, 1993 |
| 5262348 |
Method for the growing of heteroepitaxial layers within a confinement space |
Nov. 16, 1993 |
| 5250462 |
Method for fabricating an optical semiconductor device |
Oct. 5, 1993 |
| 5234844 |
Process for forming bipolar transistor structure |
Aug. 10, 1993 |
| 5221634 |
Method of making semiconductor device employing self diffusion of dopant from contact member for augmenting electrical connection to doped region in substrate |
Jun. 22, 1993 |
| 5202284 |
Selective and non-selective deposition of Si.sub.1-x Ge.sub.x on a Si subsrate that is partially masked with SiO.sub.2 |
Apr. 13, 1993 |
| 5182221 |
Method of filling a recess flat with a material by a bias ECR-CVD process |
Jan. 26, 1993 |
| 5168089 |
Substantially facet-free selective epitaxial growth process |
Dec. 1, 1992 |
| 5162245 |
Self-aligned bipolar transistor using selective polysilicon growth |
Nov. 10, 1992 |
| 5134090 |
Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy |
Jul. 28, 1992 |
| 5124276 |
Filling contact hole with selectively deposited EPI and poly silicon |
Jun. 23, 1992 |
| 5108947 |
Integration of GaAs on Si substrates |
Apr. 28, 1992 |
| 5106764 |
Device fabrication |
Apr. 21, 1992 |
| 5106778 |
Vertical transistor device fabricated with semiconductor regrowth |
Apr. 21, 1992 |
| 5106782 |
Method of manufacturing a semiconductor device |
Apr. 21, 1992 |
| 5104824 |
Selective area regrowth for surface-emitting lasers and other sharp features |
Apr. 14, 1992 |
| 5104823 |
Monolithic integration of optoelectronic and electronic devices |
Apr. 14, 1992 |
| 5093278 |
Method of manufacturing a semiconductor laser |
Mar. 3, 1992 |
| 5089430 |
Method of manufacturing semiconductor integrated circuit bipolar transistor device |
Feb. 18, 1992 |
| 5073512 |
Method of manufacturing insulated gate field effect transistor having a high impurity density region beneath the channel region |
Dec. 17, 1991 |
| 5073516 |
Selective epitaxial growth process flow for semiconductor technologies |
Dec. 17, 1991 |
| 5070038 |
Method of forming low-resistive contact to N+/P+ preohmic regions in very large scale integrated devices |
Dec. 3, 1991 |
| 5063169 |
Selectively plating conductive pillars in manufacturing a semiconductor device |
Nov. 5, 1991 |
| 5045494 |
Method for manufacturing a DRAM using selective epitaxial growth on a contact |
Sep. 3, 1991 |
| 5036022 |
Metal organic vapor phase epitaxial growth of group III-V semiconductor materials |
Jul. 30, 1991 |
| 5034346 |
Method for forming shorting contact for semiconductor which allows for relaxed alignment tolerance |
Jul. 23, 1991 |
| 5032538 |
Semiconductor embedded layer technology utilizing selective epitaxial growth methods |
Jul. 16, 1991 |
| 5028562 |
Method for producing a semiconductor laser using selective epitaxy |
Jul. 2, 1991 |
| 5017517 |
Method of fabricating semiconductor device using an Sb protection layer |
May. 21, 1991 |
| 5013682 |
Method for selective epitaxy using a WS.sub.I mask |
May. 7, 1991 |
| 5010034 |
CMOS and bipolar fabrication process using selective epitaxial growth scalable to below 0.5 micron |
Apr. 23, 1991 |
| 5008206 |
Method for making a photoelectric conversion device using an amorphous nucleation site |
Apr. 16, 1991 |
| 4999314 |
Method for making an alternation of layers of monocrystalline semiconducting material and layers of insulating material |
Mar. 12, 1991 |
| 4992388 |
Short channel IGFET process |
Feb. 12, 1991 |
| 4987087 |
Process for manufacturing a thyristor with proton irradiation |
Jan. 22, 1991 |
| 4980314 |
Vapor processing of a substrate |
Dec. 25, 1990 |
| 4980312 |
Method of manufacturing a semiconductor device having a mesa structure |
Dec. 25, 1990 |
| 4971928 |
Method of making a light emitting semiconductor having a rear reflecting surface |
Nov. 20, 1990 |
| 4970175 |
Method of manufacturing a semiconductor device using SEG and a transitory substrate |
Nov. 13, 1990 |
| 4966861 |
Vapor deposition method for simultaneously growing an epitaxial silicon layer and a polycrystalline silicone layer over a selectively oxidized silicon substrate |
Oct. 30, 1990 |
