| Patent Number |
Title Of Patent |
Date Issued |
| 5863811 |
Method for growing single crystal III-V compound semiconductor layers on non single crystal III-V Compound semiconductor buffer layers |
Jan. 26, 1999 |
| 5691237 |
Method for fabricating semiconductor device |
Nov. 25, 1997 |
| 5521126 |
Method of fabricating semiconductor devices |
May. 28, 1996 |
| 5279987 |
Fabricating planar complementary patterned subcollectors with silicon epitaxial layer |
Jan. 18, 1994 |
| 5264394 |
Method for producing high quality oxide films on substrates |
Nov. 23, 1993 |
| 5231055 |
Method of forming composite interconnect system |
Jul. 27, 1993 |
| 5208189 |
Process for plugging defects in a dielectric layer of a semiconductor device |
May. 4, 1993 |
| 5202287 |
Method for a two step selective deposition of refractory metals utilizing SiH.sub.4 reduction and H.sub.2 reduction |
Apr. 13, 1993 |
| 5182221 |
Method of filling a recess flat with a material by a bias ECR-CVD process |
Jan. 26, 1993 |
| 5180684 |
Semiconductor growth process |
Jan. 19, 1993 |
| 5164359 |
Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate |
Nov. 17, 1992 |
| 5110757 |
Formation of composite monosilicon/polysilicon layer using reduced-temperature two-step silicon deposition |
May. 5, 1992 |
| 5094974 |
Growth of III-V films by control of MBE growth front stoichiometry |
Mar. 10, 1992 |
| 5091333 |
Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth |
Feb. 25, 1992 |
| 5070031 |
Complementary semiconductor region fabrication |
Dec. 3, 1991 |
| 5053356 |
Method for production of a semiconductor laser |
Oct. 1, 1991 |
| 5037774 |
Process for the production of semiconductor devices utilizing multi-step deposition and recrystallization of amorphous silicon |
Aug. 6, 1991 |
| 5028565 |
Process for CVD deposition of tungsten layer on semiconductor wafer |
Jul. 2, 1991 |
| 5024972 |
Deposition of a conductive layer for contacts |
Jun. 18, 1991 |
| 5019529 |
Heteroepitaxial growth method |
May. 28, 1991 |
| 5013683 |
Method for growing tilted superlattices |
May. 7, 1991 |
| 5011789 |
Method of manufacturing a semiconductor device |
Apr. 30, 1991 |
| 4987096 |
Manufacturing method of semiconductor laser with non-absorbing mirror structure |
Jan. 22, 1991 |
| 4970176 |
Multiple step metallization process |
Nov. 13, 1990 |
| 4966863 |
Method for producing a semiconductor laser device |
Oct. 30, 1990 |
| 4965224 |
Process for fabricating an INP semiconductor thin film on silicon |
Oct. 23, 1990 |
| 4963506 |
Selective deposition of amorphous and polycrystalline silicon |
Oct. 16, 1990 |
| 4960720 |
Method of growing compound semiconductor thin film using multichamber smoothing process |
Oct. 2, 1990 |
| 4952527 |
Method of making buffer layers for III-V devices using solid phase epitaxy |
Aug. 28, 1990 |
| 4935385 |
Method of forming intermediate buffer films with low plastic deformation threshold using lattice mismatched heteroepitaxy |
Jun. 19, 1990 |
| 4908074 |
Gallium arsenide on sapphire heterostructure |
Mar. 13, 1990 |
| 4900372 |
III-V on Si heterostructure using a thermal strain layer |
Feb. 13, 1990 |
| 4897367 |
Process for growing gallium arsenide on silicon substrate |
Jan. 30, 1990 |
| 4897360 |
Polysilicon thin film process |
Jan. 30, 1990 |
| 4894349 |
Two step vapor-phase epitaxial growth process for control of autodoping |
Jan. 16, 1990 |
| 4876219 |
Method of forming a heteroepitaxial semiconductor thin film using amorphous buffer layers |
Oct. 24, 1989 |
| 4873205 |
Method for providing silicide bridge contact between silicon regions separated by a thin dielectric |
Oct. 10, 1989 |
| 4870030 |
Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer |
Sep. 26, 1989 |
| 4861393 |
Semiconductor heterostructures having Ge.sub.x Si.sub.1-x layers on Si utilizing molecular beam epitaxy |
Aug. 29, 1989 |
| 4859625 |
Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy |
Aug. 22, 1989 |
| 4859626 |
Method of forming thin epitaxial layers using multistep growth for autodoping control |
Aug. 22, 1989 |
| 4855249 |
Process for growing III-V compound semiconductors on sapphire using a buffer layer |
Aug. 8, 1989 |
| 4834809 |
Three dimensional semiconductor on insulator substrate |
May. 30, 1989 |
| 4835116 |
Annealing method for III-V deposition |
May. 30, 1989 |
| 4833100 |
Method for producing a silicon thin film by MBE using silicon beam precleaning |
May. 23, 1989 |
| 4824518 |
Method for the production of semiconductor devices |
Apr. 25, 1989 |
| 4800174 |
Method for producing an amorphous silicon semiconductor device using a multichamber PECVD apparatus |
Jan. 24, 1989 |
| 4786615 |
Method for improved surface planarity in selective epitaxial silicon |
Nov. 22, 1988 |
| 4707197 |
Method of producing a silicide/Si heteroepitaxial structure, and articles produced by the method |
Nov. 17, 1987 |
| 4664743 |
Growth of semi-conductors and apparatus for use therein |
May. 12, 1987 |
