| Patent Number |
Title Of Patent |
Date Issued |
| 6117749 |
Modification of interfacial fields between dielectrics and semiconductors |
Sep. 12, 2000 |
| 5998283 |
Silicon wafer having plasma CVD gettering layer with components/composition changing in depth-wise direction and method of manufacturing the silicon wafer |
Dec. 7, 1999 |
| 5976956 |
Method of controlling dopant concentrations using transient-enhanced diffusion prior to gate formation in a device |
Nov. 2, 1999 |
| 5882989 |
Process for the preparation of silicon wafers having a controlled distribution of oxygen precipitate nucleation centers |
Mar. 16, 1999 |
| 5840590 |
Impurity gettering in silicon using cavities formed by helium implantation and annealing |
Nov. 24, 1998 |
| 5629216 |
Method for producing semiconductor wafers with low light scattering anomalies |
May. 13, 1997 |
| 5569611 |
Method of manufacturing a bipolar transistor operating at low temperature |
Oct. 29, 1996 |
| 5508207 |
Method of annealing a semiconductor wafer in a hydrogen atmosphere to desorb surface contaminants |
Apr. 16, 1996 |
| 5506155 |
Method for manufacturing a substrate for semiconductor device using a selective gettering technique |
Apr. 9, 1996 |
| 5478762 |
Method for producing patterning alignment marks in oxide |
Dec. 26, 1995 |
| 5407838 |
Method for fabricating a semiconductor device using implantation and subsequent annealing to eliminate defects |
Apr. 18, 1995 |
| 5401669 |
Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers |
Mar. 28, 1995 |
| 5393686 |
Method of forming gate oxide by TLC gettering clean |
Feb. 28, 1995 |
| 5322810 |
Method for manufacturing a semiconductor device |
Jun. 21, 1994 |
| 5312764 |
Method of doping a semiconductor substrate |
May. 17, 1994 |
| 5272119 |
Process for contamination removal and minority carrier lifetime improvement in silicon |
Dec. 21, 1993 |
| 5244819 |
Method to getter contamination in semiconductor devices |
Sep. 14, 1993 |
| 5228927 |
Method for heat-treating gallium arsenide monocrystals |
Jul. 20, 1993 |
| 5198071 |
Process for inhibiting slip and microcracking while forming epitaxial layer on semiconductor wafer |
Mar. 30, 1993 |
| 5183767 |
Method for internal gettering of oxygen in III-V compound semiconductors |
Feb. 2, 1993 |
| 5094963 |
Process for producing a semiconductor device with a bulk-defect region having a nonuniform depth |
Mar. 10, 1992 |
| 5051375 |
Method of producing semiconductor wafer through gettering using spherical abrasives |
Sep. 24, 1991 |
| 5006475 |
Method for backside damage of silicon wafers |
Apr. 9, 1991 |
| 4977103 |
Method of making an article comprising a III/V semiconductor device |
Dec. 11, 1990 |
| 4888305 |
Method for photo annealing non-single crystalline semiconductor films |
Dec. 19, 1989 |
| 4885257 |
Gettering process with multi-step annealing and inert ion implantation |
Dec. 5, 1989 |
| 4868133 |
Semiconductor wafer fabrication with improved control of internal gettering sites using RTA |
Sep. 19, 1989 |
| 4851358 |
Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing |
Jul. 25, 1989 |
| 4837174 |
Method for producing thin conductive and semi-conductive layers in mono-crystal silicon |
Jun. 6, 1989 |
| 4766086 |
Method of gettering a semiconductor device and forming an isolation region therein |
Aug. 23, 1988 |
| 4740481 |
Method of preventing hillock formation in polysilicon layer by oxygen implanation |
Apr. 26, 1988 |
| 4682407 |
Means and method for stabilizing polycrystalline semiconductor layers |
Jul. 28, 1987 |
| 4679308 |
Process for controlling mobile ion contamination in semiconductor devices |
Jul. 14, 1987 |
| 4671845 |
Method for producing high quality germanium-germanium nitride interfaces for germanium semiconductors and device produced thereby |
Jun. 9, 1987 |
| 4637123 |
Method of standardizing and stabilizing semiconductor wafers |
Jan. 20, 1987 |
| 4617066 |
Process of making semiconductors having shallow, hyperabrupt doped regions by implantation and two step annealing |
Oct. 14, 1986 |
| 4605447 |
Methods of manufacturing semiconductor devices |
Aug. 12, 1986 |
| 4584026 |
Ion-implantation of phosphorus, arsenic or boron by pre-amorphizing with fluorine ions |
Apr. 22, 1986 |
| 4575466 |
Treatment process for semiconductor wafer |
Mar. 11, 1986 |
| 4559086 |
Backside gettering of silicon wafers utilizing selectively annealed single crystal silicon portions disposed between and extending into polysilicon portions |
Dec. 17, 1985 |
| 4547957 |
Imaging device having improved high temperature performance |
Oct. 22, 1985 |
| 4548654 |
Surface denuding of silicon wafer |
Oct. 22, 1985 |
| 4547256 |
Method for thermally treating a semiconductor substrate |
Oct. 15, 1985 |
| 4544417 |
Transient capless annealing process for the activation of ion implanted compound semiconductors |
Oct. 1, 1985 |
| 4521256 |
Method of making integrated devices having long and short minority carrier lifetimes |
Jun. 4, 1985 |
| 4456489 |
Method of forming a shallow and high conductivity boron doped layer in silicon |
Jun. 26, 1984 |
| 4437922 |
Method for tailoring oxygen precipitate particle density and distribution silicon wafers |
Mar. 20, 1984 |
| 4432008 |
Gold-doped IC resistor region |
Feb. 14, 1984 |
| 4366338 |
Compensating semiconductor materials |
Dec. 28, 1982 |
| 4364779 |
Fabrication of semiconductor devices including double annealing steps for radiation hardening |
Dec. 21, 1982 |
