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Class Information
Number: 148/DIG.23
Name: Metal treatment > Deep level dopants
Description:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6239041 |
Method for fabricating semiconductor integrated circuit device |
May. 29, 2001 |
| 5441900 |
CMOS latchup suppression by localized minority carrier lifetime reduction |
Aug. 15, 1995 |
| 5371040 |
Method for manufacturing semiconductor components with short switching time |
Dec. 6, 1994 |
| 5362682 |
Method of producing sheets of crystalline material and devices made therefrom |
Nov. 8, 1994 |
| 5284780 |
Method for increasing the electric strength of a multi-layer semiconductor component |
Feb. 8, 1994 |
| 5252512 |
TEOV doping of gallium arsenide |
Oct. 12, 1993 |
| 5045496 |
Semi-insulating cobalt doped indium phosphide grown by MOCVD |
Sep. 3, 1991 |
| 4999315 |
Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers |
Mar. 12, 1991 |
| 4849373 |
Growth of semi-insulating indium phosphide by liquid phase epitaxy |
Jul. 18, 1989 |
| 4837174 |
Method for producing thin conductive and semi-conductive layers in mono-crystal silicon |
Jun. 6, 1989 |
| 4782034 |
Semi-insulating group III-V based compositions doped using bis arene titanium sources |
Nov. 1, 1988 |
| H368 |
Field-effect transistor |
Nov. 3, 1987 |
| 4675709 |
Quantized layered structures with adjusted indirect bandgap transitions |
Jun. 23, 1987 |
| 4642883 |
Semiconductor bipolar integrated circuit device and method for fabrication thereof |
Feb. 17, 1987 |
| 4632710 |
Vapor phase epitaxial growth of carbon doped layers of Group III-V materials |
Dec. 30, 1986 |
| 4585489 |
Method of controlling lifetime of minority carriers by electron beam irradiation through semi-insulating layer |
Apr. 29, 1986 |
| 4548654 |
Surface denuding of silicon wafer |
Oct. 22, 1985 |
| 4490182 |
Semiconductor processing technique for oxygen doping of silicon |
Dec. 25, 1984 |
| 4301323 |
Lead-doped silicon with enhanced semiconductor properties |
Nov. 17, 1981 |
| 4220483 |
Method of increasing the gettering effect in the bulk of semiconductor bodies utilizing a preliminary thermal annealing step |
Sep. 2, 1980 |
| 4044372 |
Photovoltaic cell having controllable spectral response |
Aug. 23, 1977 |
| 3953243 |
Method for setting the lifetime of charge carriers in semiconductor bodies |
Apr. 27, 1976 |
| 3938178 |
Process for treatment of semiconductor |
Feb. 10, 1976 |
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