| |
 |
|
Class Information
Number: 148/DIG.22
Name: Metal treatment > Controlled atmosphere
Description:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5870021 |
Annealing magnetic elements for stable mechanical properties |
Feb. 9, 1999 |
| 5508207 |
Method of annealing a semiconductor wafer in a hydrogen atmosphere to desorb surface contaminants |
Apr. 16, 1996 |
| 5427638 |
Low temperature reaction bonding |
Jun. 27, 1995 |
| 5141569 |
Growth of P type Group III-V compound semiconductor on Group IV semiconductor substrate |
Aug. 25, 1992 |
| 5094974 |
Growth of III-V films by control of MBE growth front stoichiometry |
Mar. 10, 1992 |
| 4898834 |
Open-tube, benign-environment annealing method for compound semiconductors |
Feb. 6, 1990 |
| 4879259 |
Rapid thermal annealing of gallium arsenide with trimethyl arsenic overpressure |
Nov. 7, 1989 |
| 4835114 |
Method for LPCVD of semiconductors using oil free vacuum pumps |
May. 30, 1989 |
| 4591409 |
Control of nitrogen and/or oxygen in silicon via nitride oxide pressure during crystal growth |
May. 27, 1986 |
| 4545115 |
Method and apparatus for making ohmic and/or Schottky barrier contacts to semiconductor substrates |
Oct. 8, 1985 |
| 4544417 |
Transient capless annealing process for the activation of ion implanted compound semiconductors |
Oct. 1, 1985 |
| 4477311 |
Process and apparatus for fabricating a semiconductor device |
Oct. 16, 1984 |
| 4339285 |
Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation |
Jul. 13, 1982 |
| 4095004 |
Process for low temperature stoichiometric recrystallization of compound semiconductor films |
Jun. 13, 1978 |
| 3984263 |
Method of producing defectless epitaxial layer of gallium |
Oct. 5, 1976 |
|
|
|
