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Class Information
Number: 148/DIG.19
Name: Metal treatment > Contacts of silicides
Description:










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
7037371 Method for fabricating semiconductor device May. 2, 2006
6074925 Method for fabricating semiconductor device with polycide structure for electrode or interconnect Jun. 13, 2000
5899742 Manufacturing method for self-aligned local interconnects and contacts simultaneously May. 4, 1999
5837608 Method of filling a contact hole in a semiconductor device using vertical growth of metal Nov. 17, 1998
5830775 Raised silicided source/drain electrode formation with reduced substrate silicon consumption Nov. 3, 1998
5824586 Method of manufacturing a raised source/drain MOSFET Oct. 20, 1998
5719079 Method of making a semiconductor device having high density 4T SRAM in logic with salicide process Feb. 17, 1998
5643633 Uniform tungsten silicide films produced by chemical vapor depostiton Jul. 1, 1997
5580806 Method of fabricating a buried contact structure for SRAM Dec. 3, 1996
5567642 Method of fabricating gate electrode of CMOS device Oct. 22, 1996
5558910 Uniform tungsten silicide films produced by chemical vapor deposition Sep. 24, 1996
5543361 Process for forming titanium silicide local interconnect Aug. 6, 1996
5525543 Method of making a semiconductor device using a titanium-rich silicide film Jun. 11, 1996
5512516 Contact structure for connecting an electrode to a semiconductor device and a method of forming the same Apr. 30, 1996
5500249 Uniform tungsten silicide films produced by chemical vapor deposition Mar. 19, 1996
5470794 Method for forming a silicide using ion beam mixing Nov. 28, 1995
5461005 Method of forming silicide in integrated circuit manufacture Oct. 24, 1995
5451545 Process for forming stable local interconnect/active area silicide structure VLSI applications Sep. 19, 1995
5449631 Prevention of agglomeration and inversion in a semiconductor salicide process Sep. 12, 1995
5447875 Self-aligned silicided gate process Sep. 5, 1995
5444024 Method for low energy implantation of argon to control titanium silicide formation Aug. 22, 1995
5432129 Method of forming low resistance contacts at the junction between regions having different conductivity types Jul. 11, 1995
5418179 Process of fabricating complementary inverter circuit having multi-level interconnection May. 23, 1995
5409853 Process of making silicided contacts for semiconductor devices Apr. 25, 1995
5405806 Method for forming a metal silicide interconnect in an integrated circuit Apr. 11, 1995
5401674 Germanium implant for use with ultra-shallow junctions Mar. 28, 1995
5397744 Aluminum metallization method Mar. 14, 1995
5391521 Method for fabricating low resistance contacts of semiconductor device Feb. 21, 1995
5391520 Method for forming local interconnect for integrated circuits Feb. 21, 1995
5369055 Method for fabricating titanium silicide contacts Nov. 29, 1994
5344793 Formation of silicided junctions in deep sub-micron MOSFETs by defect enhanced CoSi2 formation Sep. 6, 1994
5336637 Silicide interconnection with Schottky barrier diode isolation Aug. 9, 1994
5332692 Method of manufacturing a semiconductor device having a polycide structure Jul. 26, 1994
5326724 Oxide-capped titanium silicide formation Jul. 5, 1994
5322809 Self-aligned silicide process Jun. 21, 1994
5316977 Method of manufacturing a semiconductor device comprising metal silicide May. 31, 1994
5302552 Method of manufacturing a semiconductor device whereby a self-aligned cobalt or nickel silicide is formed Apr. 12, 1994
5236852 Method for contacting a semiconductor device Aug. 17, 1993
5231056 Tungsten silicide (WSi.sub.x) deposition process for semiconductor manufacture Jul. 27, 1993
5227316 Method of forming self aligned extended base contact for a bipolar transistor having reduced cell size Jul. 13, 1993
5217924 Method for forming shallow junctions with a low resistivity silicide layer Jun. 8, 1993
5210047 Process for fabricating a flash EPROM having reduced cell size May. 11, 1993
5208168 Semiconductor device having punch-through protected buried contacts and method for making the same May. 4, 1993
5206187 Method of processing semiconductor wafers using a contact etch stop Apr. 27, 1993
5196360 Methods for inhibiting outgrowth of silicide in self-aligned silicide process Mar. 23, 1993
5194405 Method of manufacturing a semiconductor device having a silicide layer Mar. 16, 1993
5187122 Process for fabricating an integrated circuit using local silicide interconnection lines Feb. 16, 1993
5173450 Titanium silicide local interconnect process Dec. 22, 1992
5162262 Multi-layered interconnection structure for a semiconductor device and manufactured method thereof Nov. 10, 1992
5162263 Semiconductor device having salicide structure, method of manufacturing the same, and heating apparatus Nov. 10, 1992

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