| Patent Number |
Title Of Patent |
Date Issued |
| 7037371 |
Method for fabricating semiconductor device |
May. 2, 2006 |
| 6074925 |
Method for fabricating semiconductor device with polycide structure for electrode or interconnect |
Jun. 13, 2000 |
| 5899742 |
Manufacturing method for self-aligned local interconnects and contacts simultaneously |
May. 4, 1999 |
| 5837608 |
Method of filling a contact hole in a semiconductor device using vertical growth of metal |
Nov. 17, 1998 |
| 5830775 |
Raised silicided source/drain electrode formation with reduced substrate silicon consumption |
Nov. 3, 1998 |
| 5824586 |
Method of manufacturing a raised source/drain MOSFET |
Oct. 20, 1998 |
| 5719079 |
Method of making a semiconductor device having high density 4T SRAM in logic with salicide process |
Feb. 17, 1998 |
| 5643633 |
Uniform tungsten silicide films produced by chemical vapor depostiton |
Jul. 1, 1997 |
| 5580806 |
Method of fabricating a buried contact structure for SRAM |
Dec. 3, 1996 |
| 5567642 |
Method of fabricating gate electrode of CMOS device |
Oct. 22, 1996 |
| 5558910 |
Uniform tungsten silicide films produced by chemical vapor deposition |
Sep. 24, 1996 |
| 5543361 |
Process for forming titanium silicide local interconnect |
Aug. 6, 1996 |
| 5525543 |
Method of making a semiconductor device using a titanium-rich silicide film |
Jun. 11, 1996 |
| 5512516 |
Contact structure for connecting an electrode to a semiconductor device and a method of forming the same |
Apr. 30, 1996 |
| 5500249 |
Uniform tungsten silicide films produced by chemical vapor deposition |
Mar. 19, 1996 |
| 5470794 |
Method for forming a silicide using ion beam mixing |
Nov. 28, 1995 |
| 5461005 |
Method of forming silicide in integrated circuit manufacture |
Oct. 24, 1995 |
| 5451545 |
Process for forming stable local interconnect/active area silicide structure VLSI applications |
Sep. 19, 1995 |
| 5449631 |
Prevention of agglomeration and inversion in a semiconductor salicide process |
Sep. 12, 1995 |
| 5447875 |
Self-aligned silicided gate process |
Sep. 5, 1995 |
| 5444024 |
Method for low energy implantation of argon to control titanium silicide formation |
Aug. 22, 1995 |
| 5432129 |
Method of forming low resistance contacts at the junction between regions having different conductivity types |
Jul. 11, 1995 |
| 5418179 |
Process of fabricating complementary inverter circuit having multi-level interconnection |
May. 23, 1995 |
| 5409853 |
Process of making silicided contacts for semiconductor devices |
Apr. 25, 1995 |
| 5405806 |
Method for forming a metal silicide interconnect in an integrated circuit |
Apr. 11, 1995 |
| 5401674 |
Germanium implant for use with ultra-shallow junctions |
Mar. 28, 1995 |
| 5397744 |
Aluminum metallization method |
Mar. 14, 1995 |
| 5391521 |
Method for fabricating low resistance contacts of semiconductor device |
Feb. 21, 1995 |
| 5391520 |
Method for forming local interconnect for integrated circuits |
Feb. 21, 1995 |
| 5369055 |
Method for fabricating titanium silicide contacts |
Nov. 29, 1994 |
| 5344793 |
Formation of silicided junctions in deep sub-micron MOSFETs by defect enhanced CoSi2 formation |
Sep. 6, 1994 |
| 5336637 |
Silicide interconnection with Schottky barrier diode isolation |
Aug. 9, 1994 |
| 5332692 |
Method of manufacturing a semiconductor device having a polycide structure |
Jul. 26, 1994 |
| 5326724 |
Oxide-capped titanium silicide formation |
Jul. 5, 1994 |
| 5322809 |
Self-aligned silicide process |
Jun. 21, 1994 |
| 5316977 |
Method of manufacturing a semiconductor device comprising metal silicide |
May. 31, 1994 |
| 5302552 |
Method of manufacturing a semiconductor device whereby a self-aligned cobalt or nickel silicide is formed |
Apr. 12, 1994 |
| 5236852 |
Method for contacting a semiconductor device |
Aug. 17, 1993 |
| 5231056 |
Tungsten silicide (WSi.sub.x) deposition process for semiconductor manufacture |
Jul. 27, 1993 |
| 5227316 |
Method of forming self aligned extended base contact for a bipolar transistor having reduced cell size |
Jul. 13, 1993 |
| 5217924 |
Method for forming shallow junctions with a low resistivity silicide layer |
Jun. 8, 1993 |
| 5210047 |
Process for fabricating a flash EPROM having reduced cell size |
May. 11, 1993 |
| 5208168 |
Semiconductor device having punch-through protected buried contacts and method for making the same |
May. 4, 1993 |
| 5206187 |
Method of processing semiconductor wafers using a contact etch stop |
Apr. 27, 1993 |
| 5196360 |
Methods for inhibiting outgrowth of silicide in self-aligned silicide process |
Mar. 23, 1993 |
| 5194405 |
Method of manufacturing a semiconductor device having a silicide layer |
Mar. 16, 1993 |
| 5187122 |
Process for fabricating an integrated circuit using local silicide interconnection lines |
Feb. 16, 1993 |
| 5173450 |
Titanium silicide local interconnect process |
Dec. 22, 1992 |
| 5162262 |
Multi-layered interconnection structure for a semiconductor device and manufactured method thereof |
Nov. 10, 1992 |
| 5162263 |
Semiconductor device having salicide structure, method of manufacturing the same, and heating apparatus |
Nov. 10, 1992 |
