| Patent Number |
Title Of Patent |
Date Issued |
| 5814546 |
Method for producing a bipolar semiconductor device having SiC-based epitaxial layer |
Sep. 29, 1998 |
| 5496744 |
Method of fabricating complementary poly emitter transistors |
Mar. 5, 1996 |
| 5409848 |
Angled lateral pocket implants on p-type semiconductor devices |
Apr. 25, 1995 |
| 5283203 |
Self-aligned contact process for complementary field-effect integrated circuits |
Feb. 1, 1994 |
| 5210043 |
Process for producing semiconductor device |
May. 11, 1993 |
| 5091335 |
MBE growth technology for high quality strained III-V layers |
Feb. 25, 1992 |
| 5047360 |
Method of manufacture thin film transistors |
Sep. 10, 1991 |
| 5024961 |
Blanket punchthrough and field-isolation implant for sub-micron N-channel CMOS devices |
Jun. 18, 1991 |
| 4987098 |
Method of producing a metal-oxide semiconductor device |
Jan. 22, 1991 |
| 4798794 |
Method for manufacturing dynamic memory cell |
Jan. 17, 1989 |
| 4692558 |
Counteraction of semiconductor impurity effects |
Sep. 8, 1987 |
| 4646427 |
Method of electrically adjusting the zener knee of a lateral polysilicon zener diode |
Mar. 3, 1987 |
| 4629514 |
Method of producing II-V compound semiconductors |
Dec. 16, 1986 |
| 4596068 |
Process for minimizing boron depletion in N-channel FET at the silicon-silicon oxide interface |
Jun. 24, 1986 |
| 4366338 |
Compensating semiconductor materials |
Dec. 28, 1982 |
| 4358891 |
Method of forming a metal semiconductor field effect transistor |
Nov. 16, 1982 |
| 4357183 |
Heteroepitaxy of germanium silicon on silicon utilizing alloying control |
Nov. 2, 1982 |
| 4321104 |
Photoetching method |
Mar. 23, 1982 |
| 4312046 |
Vertical fuse and method of fabrication |
Jan. 19, 1982 |
| 4310362 |
Method of making Schottky diode with an improved voltage behavior |
Jan. 12, 1982 |
| 4309811 |
Means and method of reducing the number of masks utilized in fabricating complex multilevel integrated circuits |
Jan. 12, 1982 |
| 4309224 |
Method for manufacturing a semiconductor device |
Jan. 5, 1982 |
| 4305760 |
Polysilicon-to-substrate contact processing |
Dec. 15, 1981 |
| 4301592 |
Method of fabricating semiconductor junction device employing separate metallization |
Nov. 24, 1981 |
| 4292730 |
Method of fabricating mesa bipolar memory cell utilizing epitaxial deposition, substrate removal and special metallization |
Oct. 6, 1981 |
| 4292728 |
Method for manufacturing semiconductor integrated circuits utilizing special contact formation |
Oct. 6, 1981 |
| 4287661 |
Method for making an improved polysilicon conductor structure utilizing reactive-ion etching and thermal oxidation |
Sep. 8, 1981 |
| 4286374 |
Large scale integrated circuit production |
Sep. 1, 1981 |
| 4283439 |
Method of manufacturing a semiconductor device by forming a tungsten silicide or molybdenum silicide electrode |
Aug. 11, 1981 |
| 4249968 |
Method of manufacturing a metal-insulator-semiconductor utilizing a multiple stage deposition of polycrystalline layers |
Feb. 10, 1981 |
| 4246693 |
Method of fabricating semiconductor device by bonding together silicon substrate and electrode or the like with aluminum |
Jan. 27, 1981 |
| 4188707 |
Semiconductor devices and method of manufacturing the same |
Feb. 19, 1980 |
| 4186410 |
Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors |
Jan. 29, 1980 |
| 4155155 |
Method of manufacturing power semiconductors with pressed contacts |
May. 22, 1979 |
| 4106044 |
Field effect transistor having unsaturated characteristics |
Aug. 8, 1978 |
| 4096509 |
MNOS memory transistor having a redeposited silicon nitride gate dielectric |
Jun. 20, 1978 |
| 4074305 |
GaAs layers as contacts to thin film semiconductor layers |
Feb. 14, 1978 |
| 4064525 |
Negative-resistance semiconductor device |
Dec. 20, 1977 |
| 4011583 |
Ohmics contacts of germanium and palladium alloy from group III-V n-type semiconductors |
Mar. 8, 1977 |
| 3990097 |
Silicon solar energy cell having improved back contact and method forming same |
Nov. 2, 1976 |
| 3975818 |
Method of forming closely spaced electrodes onto semiconductor device |
Aug. 24, 1976 |
| 3958265 |
Semiconductor light-emitting diode and method for producing same |
May. 18, 1976 |
| 3941624 |
Sn-Doped group III(a)-v(a) Ga-containing layers grown by molecular beam epitaxy |
Mar. 2, 1976 |
| 3931673 |
Aluminum for bonding Si-Ge alloys to graphite |
Jan. 13, 1976 |
