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Class Information
Number: 148/DIG.169
Name: Metal treatment > Vacuum deposition (includes molecular beam epitaxy
Description:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7598513 |
Si.sub.xSn.sub.yGe.sub.1-x-y and related alloy heterostructures based on Si, Ge and Sn |
Oct. 6, 2009 |
| 5907792 |
Method of forming a silicon nitride layer |
May. 25, 1999 |
| 5834361 |
Multi-layer structure for II-VI group compound semiconductor on an InP substrate and method for forming the same |
Nov. 10, 1998 |
| 5705408 |
Method for forming semiconductor integrated circuit using monolayer epitaxial growth |
Jan. 6, 1998 |
| 5550084 |
Integrated circuit fabrication using a metal silicide having a sputterdeposited metal nitride layer |
Aug. 27, 1996 |
| 5480818 |
Method for forming a film and method for manufacturing a thin film transistor |
Jan. 2, 1996 |
| 5346851 |
Method of fabricating Shannon Cell circuits |
Sep. 13, 1994 |
| 5308444 |
Method of making semiconductor heterostructures of gallium arsenide on germanium |
May. 3, 1994 |
| 5186718 |
Staged-vacuum wafer processing system and method |
Feb. 16, 1993 |
| 5182221 |
Method of filling a recess flat with a material by a bias ECR-CVD process |
Jan. 26, 1993 |
| 5120393 |
Method for molecular-beam epitaxial growth |
Jun. 9, 1992 |
| 5094974 |
Growth of III-V films by control of MBE growth front stoichiometry |
Mar. 10, 1992 |
| 5093278 |
Method of manufacturing a semiconductor laser |
Mar. 3, 1992 |
| 5080870 |
Sublimating and cracking apparatus |
Jan. 14, 1992 |
| RE33671 |
Method of making high mobility multilayered heterojunction device employing modulated doping |
Aug. 20, 1991 |
| 5028561 |
Method of growing p-type group II-VI material |
Jul. 2, 1991 |
| 5025751 |
Solid film growth apparatus |
Jun. 25, 1991 |
| 5026655 |
Process of fabricating a heterojunction field effect transistor |
Jun. 25, 1991 |
| 5013683 |
Method for growing tilted superlattices |
May. 7, 1991 |
| 4977103 |
Method of making an article comprising a III/V semiconductor device |
Dec. 11, 1990 |
| 4963506 |
Selective deposition of amorphous and polycrystalline silicon |
Oct. 16, 1990 |
| 4960720 |
Method of growing compound semiconductor thin film using multichamber smoothing process |
Oct. 2, 1990 |
| 4948751 |
Moelcular beam epitaxy for selective epitaxial growth of III - V compound semiconductor |
Aug. 14, 1990 |
| 4939102 |
Method of growing III-V semiconductor layers with high effective hole concentration |
Jul. 3, 1990 |
| 4925810 |
Compound semiconductor device and a method of manufacturing the same |
May. 15, 1990 |
| 4920069 |
Submicron dimension compound semiconductor fabrication using thermal etching |
Apr. 24, 1990 |
| 4916089 |
Process for the epitaxial production of semiconductor stock material |
Apr. 10, 1990 |
| 4910167 |
III-V Semiconductor growth initiation on silicon using TMG and TEG |
Mar. 20, 1990 |
| 4894349 |
Two step vapor-phase epitaxial growth process for control of autodoping |
Jan. 16, 1990 |
| 4885258 |
Method for making a thin film transistor using a concentric inlet feeding system |
Dec. 5, 1989 |
| 4883770 |
Selective NIPI doping super lattice contacts and other semiconductor device structures formed by shadow masking fabrication |
Nov. 28, 1989 |
| 4878956 |
Single crystal films of cubic group II fluorides on semiconductor compounds |
Nov. 7, 1989 |
| 4876219 |
Method of forming a heteroepitaxial semiconductor thin film using amorphous buffer layers |
Oct. 24, 1989 |
| 4876218 |
Method of growing GaAs films on Si or GaAs substrates using ale |
Oct. 24, 1989 |
| 4874438 |
Intermetallic compound semiconductor thin film and method of manufacturing same |
Oct. 17, 1989 |
| 4870032 |
Method of fabricating single crystal films of cubic group II fluorides on semiconductor componds by molecular beam epitaxy |
Sep. 26, 1989 |
| 4861393 |
Semiconductor heterostructures having Ge.sub.x Si.sub.1-x layers on Si utilizing molecular beam epitaxy |
Aug. 29, 1989 |
| 4855256 |
Method of manufacturing masked semiconductor laser |
Aug. 8, 1989 |
| 4847216 |
Process for the deposition by epitaxy of a doped material |
Jul. 11, 1989 |
| 4843029 |
Method of manufacturing a heteroepitaxial compound semiconductor device using photo smoothing between layer growth |
Jun. 27, 1989 |
| 4835114 |
Method for LPCVD of semiconductors using oil free vacuum pumps |
May. 30, 1989 |
| 4833100 |
Method for producing a silicon thin film by MBE using silicon beam precleaning |
May. 23, 1989 |
| 4833101 |
Method of growing quaternary or pentanary alloy semiconductor lattice-matched to substrate by MBE |
May. 23, 1989 |
| 4829022 |
Method for forming thin films of compound semiconductors by flow rate modulation epitaxy |
May. 9, 1989 |
| 4829021 |
Process for vacuum chemical epitaxy |
May. 9, 1989 |
| 4826784 |
Selective OMCVD growth of compound semiconductor materials on silicon substrates |
May. 2, 1989 |
| 4824518 |
Method for the production of semiconductor devices |
Apr. 25, 1989 |
| 4806502 |
Method for doping semi-conductor material during epitaxial growth |
Feb. 21, 1989 |
| 4804639 |
Method of making a DH laser with strained layers by MBE |
Feb. 14, 1989 |
| 4786616 |
Method for heteroepitaxial growth using multiple MBE chambers |
Nov. 22, 1988 |
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