| Patent Number |
Title Of Patent |
Date Issued |
| 5858818 |
Formation of InGaSa p-n Junction by control of growth temperature |
Jan. 12, 1999 |
| 5616515 |
Silicon oxide germanium resonant tunneling |
Apr. 1, 1997 |
| 5489549 |
Method of fabricating n-type antimony-based strained layer superlattice |
Feb. 6, 1996 |
| 5427965 |
Method of fabricating a complementary heterojunction FET |
Jun. 27, 1995 |
| 5420059 |
Method of making a high performance MESFET with multiple quantum wells |
May. 30, 1995 |
| 5354700 |
Method of manufacturing super channel TFT structure |
Oct. 11, 1994 |
| 5273919 |
Method of producing a thin film field effect transistor |
Dec. 28, 1993 |
| 5254496 |
Semiconductor mixed crystal quantum well device manufacture |
Oct. 19, 1993 |
| 5238867 |
Method for preparing an optical switching device having multiple quantum wells |
Aug. 24, 1993 |
| 5232867 |
Method for the making of optoelectronic semiconductor devices |
Aug. 3, 1993 |
| 5208182 |
Dislocation density reduction in gallium arsenide on silicon heterostructures |
May. 4, 1993 |
| 5182229 |
Method for diffusing an n type impurity from a solid phase source into a III-V compound semiconductor |
Jan. 26, 1993 |
| 5180684 |
Semiconductor growth process |
Jan. 19, 1993 |
| 5171707 |
Method of fabricating semiconductor laser device using the light generated by the laser to disorder its active layer at the end surfaces thereby forming window regions |
Dec. 15, 1992 |
| 5055141 |
Enhancement of short-circuit current by use of wide bandgap N-layers in P-I-N amorphous silicon photovoltaic cells |
Oct. 8, 1991 |
| RE33671 |
Method of making high mobility multilayered heterojunction device employing modulated doping |
Aug. 20, 1991 |
| 5021360 |
Method of farbicating highly lattice mismatched quantum well structures |
Jun. 4, 1991 |
| 5013683 |
Method for growing tilted superlattices |
May. 7, 1991 |
| 5008211 |
Method for forming FET with a super lattice channel |
Apr. 16, 1991 |
| 4988634 |
Method for forming FET with a super lattice channel |
Jan. 29, 1991 |
| 4983540 |
Method of manufacturing devices having superlattice structures |
Jan. 8, 1991 |
| 4980313 |
Method of producing a semiconductor laser |
Dec. 25, 1990 |
| 4963508 |
Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice |
Oct. 16, 1990 |
| 4957879 |
Method of making a semiconductor laser using superlattice disordering |
Sep. 18, 1990 |
| 4948752 |
Method of making sagfets on buffer layers |
Aug. 14, 1990 |
| 4937204 |
Method of making a superlattice heterojunction bipolar device |
Jun. 26, 1990 |
| 4927471 |
Semiconductor substrate comprising wafer substrate and compound semiconductor layer |
May. 22, 1990 |
| 4883770 |
Selective NIPI doping super lattice contacts and other semiconductor device structures formed by shadow masking fabrication |
Nov. 28, 1989 |
| 4871690 |
Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects |
Oct. 3, 1989 |
| 4843032 |
Process for producing a DFB laser with a diffraction grating superlattice |
Jun. 27, 1989 |
| 4843028 |
Method for producing a spatially periodic semiconductor layer structure |
Jun. 27, 1989 |
| 4833101 |
Method of growing quaternary or pentanary alloy semiconductor lattice-matched to substrate by MBE |
May. 23, 1989 |
| 4829022 |
Method for forming thin films of compound semiconductors by flow rate modulation epitaxy |
May. 9, 1989 |
| 4793872 |
III-V Compound heteroepitaxial 3-D semiconductor structures utilizing superlattices |
Dec. 27, 1988 |
| 4771013 |
Process of making a double heterojunction 3-D I.sup.2 L bipolar transistor with a Si/Ge superlattice |
Sep. 13, 1988 |
| 4769341 |
Method of fabricating non-silicon materials on silicon substrate using an alloy of Sb and Group IV semiconductors |
Sep. 6, 1988 |
| 4758534 |
Process for producing porous refractory metal layers embedded in semiconductor devices |
Jul. 19, 1988 |
| 4721535 |
Solar cell |
Jan. 26, 1988 |
| 4720309 |
Saturatable absorbant with very short switching times |
Jan. 19, 1988 |
| 4718947 |
Superlattice doped layers for amorphous silicon photovoltaic cells |
Jan. 12, 1988 |
| 4705912 |
Photovoltaic device |
Nov. 10, 1987 |
| 4695857 |
Superlattice semiconductor having high carrier density |
Sep. 22, 1987 |
| 4690750 |
Micro-porous superlattice separations |
Sep. 1, 1987 |
| 4675709 |
Quantized layered structures with adjusted indirect bandgap transitions |
Jun. 23, 1987 |
| 4598164 |
Solar cell made from amorphous superlattice material |
Jul. 1, 1986 |
| 4575924 |
Process for fabricating quantum-well devices utilizing etch and refill techniques |
Mar. 18, 1986 |
| 4566918 |
Utilizing interdiffusion of sequentially deposited links of HgTe and CdTe |
Jan. 28, 1986 |
| 4561916 |
Method of growth of compound semiconductor |
Dec. 31, 1985 |
| 4548658 |
Growth of lattice-graded epilayers |
Oct. 22, 1985 |
| 4411728 |
Method for manufacture of interdigital periodic structure device |
Oct. 25, 1983 |
