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Class Information
Number: 148/DIG.160
Name: Metal treatment > Superlattice

Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
5858818 Formation of InGaSa p-n Junction by control of growth temperature Jan. 12, 1999
5616515 Silicon oxide germanium resonant tunneling Apr. 1, 1997
5489549 Method of fabricating n-type antimony-based strained layer superlattice Feb. 6, 1996
5427965 Method of fabricating a complementary heterojunction FET Jun. 27, 1995
5420059 Method of making a high performance MESFET with multiple quantum wells May. 30, 1995
5354700 Method of manufacturing super channel TFT structure Oct. 11, 1994
5273919 Method of producing a thin film field effect transistor Dec. 28, 1993
5254496 Semiconductor mixed crystal quantum well device manufacture Oct. 19, 1993
5238867 Method for preparing an optical switching device having multiple quantum wells Aug. 24, 1993
5232867 Method for the making of optoelectronic semiconductor devices Aug. 3, 1993
5208182 Dislocation density reduction in gallium arsenide on silicon heterostructures May. 4, 1993
5182229 Method for diffusing an n type impurity from a solid phase source into a III-V compound semiconductor Jan. 26, 1993
5180684 Semiconductor growth process Jan. 19, 1993
5171707 Method of fabricating semiconductor laser device using the light generated by the laser to disorder its active layer at the end surfaces thereby forming window regions Dec. 15, 1992
5055141 Enhancement of short-circuit current by use of wide bandgap N-layers in P-I-N amorphous silicon photovoltaic cells Oct. 8, 1991
RE33671 Method of making high mobility multilayered heterojunction device employing modulated doping Aug. 20, 1991
5021360 Method of farbicating highly lattice mismatched quantum well structures Jun. 4, 1991
5013683 Method for growing tilted superlattices May. 7, 1991
5008211 Method for forming FET with a super lattice channel Apr. 16, 1991
4988634 Method for forming FET with a super lattice channel Jan. 29, 1991
4983540 Method of manufacturing devices having superlattice structures Jan. 8, 1991
4980313 Method of producing a semiconductor laser Dec. 25, 1990
4963508 Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice Oct. 16, 1990
4957879 Method of making a semiconductor laser using superlattice disordering Sep. 18, 1990
4948752 Method of making sagfets on buffer layers Aug. 14, 1990
4937204 Method of making a superlattice heterojunction bipolar device Jun. 26, 1990
4927471 Semiconductor substrate comprising wafer substrate and compound semiconductor layer May. 22, 1990
4883770 Selective NIPI doping super lattice contacts and other semiconductor device structures formed by shadow masking fabrication Nov. 28, 1989
4871690 Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects Oct. 3, 1989
4843032 Process for producing a DFB laser with a diffraction grating superlattice Jun. 27, 1989
4843028 Method for producing a spatially periodic semiconductor layer structure Jun. 27, 1989
4833101 Method of growing quaternary or pentanary alloy semiconductor lattice-matched to substrate by MBE May. 23, 1989
4829022 Method for forming thin films of compound semiconductors by flow rate modulation epitaxy May. 9, 1989
4793872 III-V Compound heteroepitaxial 3-D semiconductor structures utilizing superlattices Dec. 27, 1988
4771013 Process of making a double heterojunction 3-D I.sup.2 L bipolar transistor with a Si/Ge superlattice Sep. 13, 1988
4769341 Method of fabricating non-silicon materials on silicon substrate using an alloy of Sb and Group IV semiconductors Sep. 6, 1988
4758534 Process for producing porous refractory metal layers embedded in semiconductor devices Jul. 19, 1988
4721535 Solar cell Jan. 26, 1988
4720309 Saturatable absorbant with very short switching times Jan. 19, 1988
4718947 Superlattice doped layers for amorphous silicon photovoltaic cells Jan. 12, 1988
4705912 Photovoltaic device Nov. 10, 1987
4695857 Superlattice semiconductor having high carrier density Sep. 22, 1987
4690750 Micro-porous superlattice separations Sep. 1, 1987
4675709 Quantized layered structures with adjusted indirect bandgap transitions Jun. 23, 1987
4598164 Solar cell made from amorphous superlattice material Jul. 1, 1986
4575924 Process for fabricating quantum-well devices utilizing etch and refill techniques Mar. 18, 1986
4566918 Utilizing interdiffusion of sequentially deposited links of HgTe and CdTe Jan. 28, 1986
4561916 Method of growth of compound semiconductor Dec. 31, 1985
4548658 Growth of lattice-graded epilayers Oct. 22, 1985
4411728 Method for manufacture of interdigital periodic structure device Oct. 25, 1983

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