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Class Information
Number: 148/DIG.16
Name: Metal treatment > Catalyst
Description:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6093587 |
Crystallization of amorphous silicon film using a metal catalyst |
Jul. 25, 2000 |
| 5923962 |
Method for manufacturing a semiconductor device |
Jul. 13, 1999 |
| 5879974 |
Method of manufacturing a semiconductor device |
Mar. 9, 1999 |
| 5869362 |
Method of manufacturing semiconductor device |
Feb. 9, 1999 |
| 5804473 |
Thin film semiconductor device having a polycrystal active region and a fabrication process thereof |
Sep. 8, 1998 |
| 5773329 |
Polysilicon grown by pulsed rapid thermal annealing |
Jun. 30, 1998 |
| 5712191 |
Method for producing semiconductor device |
Jan. 27, 1998 |
| 5696003 |
Method for fabricating a semiconductor device using a catalyst introduction region |
Dec. 9, 1997 |
| 5693541 |
Method for manufacturing a semiconductor device using a silicon nitride mask |
Dec. 2, 1997 |
| 5643826 |
Method for manufacturing a semiconductor device |
Jul. 1, 1997 |
| 5614426 |
Method of manufacturing semiconductor device having different orientations of crystal channel growth |
Mar. 25, 1997 |
| 5605846 |
Method for manufacturing semiconductor device |
Feb. 25, 1997 |
| 5595923 |
Method of forming a thin film transistor |
Jan. 21, 1997 |
| 5585291 |
Method for manufacturing a semiconductor device containing a crystallization promoting material |
Dec. 17, 1996 |
| 5580792 |
Method of removing a catalyst substance from the channel region of a TFT after crystallization |
Dec. 3, 1996 |
| 5550070 |
Method for producing crystalline semiconductor film having reduced concentration of catalyst elements for crystallization and semiconductor device having the same |
Aug. 27, 1996 |
| 5529937 |
Process for fabricating thin film transistor |
Jun. 25, 1996 |
| 5492843 |
Method of fabricating semiconductor device and method of processing substrate |
Feb. 20, 1996 |
| 5488000 |
Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer |
Jan. 30, 1996 |
| 5447873 |
Method of making a universal quantum dot logic cell |
Sep. 5, 1995 |
| 5426064 |
Method of fabricating a semiconductor device |
Jun. 20, 1995 |
| 5405801 |
Method for manufacturing a capacitor of a semiconductor device |
Apr. 11, 1995 |
| 5147827 |
Method for producing a passivation film of InP compound semiconductor |
Sep. 15, 1992 |
| 5124278 |
Amino replacements for arsine, antimony and phosphine |
Jun. 23, 1992 |
| 4806505 |
Samarium- and ytterbium-promoted oxidation of silicon and gallium arsenide surfaces |
Feb. 21, 1989 |
| 4735921 |
Nitridation of silicon and other semiconductors using alkali metal catalysts |
Apr. 5, 1988 |
| 4526629 |
Catalytic oxidation of solid materials |
Jul. 2, 1985 |
| 4068020 |
Method of depositing elemental amorphous silicon |
Jan. 10, 1978 |
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