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Class Information
Number: 148/DIG.154
Name: Metal treatment > Solid phase epitaxy

Patents under this class:

Patent Number Title Of Patent Date Issued
5686343 Process for isolating a semiconductor layer on an insulator Nov. 11, 1997
5488000 Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer Jan. 30, 1996
5409853 Process of making silicided contacts for semiconductor devices Apr. 25, 1995
5278093 Method for forming semiconductor thin film Jan. 11, 1994
5238879 Method for the production of polycrystalline layers having granular crystalline structure for thin-film semiconductor components such as solar cells Aug. 24, 1993
5169806 Method of making amorphous deposited polycrystalline silicon thermal ink jet transducers Dec. 8, 1992
5075243 Fabrication of nanometer single crystal metallic CoSi.sub.2 structures on Si Dec. 24, 1991
5066610 Capping technique for zone-melting recrystallization of insulated semiconductor films Nov. 19, 1991
5061655 Method of producing SOI structures Oct. 29, 1991
5057452 Method of manufacturing a semiconductor device Oct. 15, 1991
5045482 Method of making a tandem PIN semiconductor photoelectric conversion device Sep. 3, 1991
5024957 Method of fabricating a bipolar transistor with ultra-thin epitaxial base Jun. 18, 1991
5019529 Heteroepitaxial growth method May. 28, 1991
4990464 Method of forming improved encapsulation layer Feb. 5, 1991
4975387 Formation of epitaxial si-ge heterostructures by solid phase epitaxy Dec. 4, 1990
4952527 Method of making buffer layers for III-V devices using solid phase epitaxy Aug. 28, 1990
4935385 Method of forming intermediate buffer films with low plastic deformation threshold using lattice mismatched heteroepitaxy Jun. 19, 1990
4914053 Heteroepitaxial selective-area growth through insulator windows Apr. 3, 1990
4902642 Epitaxial process for silicon on insulator structure Feb. 20, 1990
4876219 Method of forming a heteroepitaxial semiconductor thin film using amorphous buffer layers Oct. 24, 1989
4808546 SOI process for forming a thin film transistor using solid phase epitaxy Feb. 28, 1989
4778775 Buried interconnect for silicon on insulator structure Oct. 18, 1988
4760036 Process for growing silicon-on-insulator wafers using lateral epitaxial growth with seed window oxidation Jul. 26, 1988
4757030 Method of making group IV single crystal layers on group III-V substrates using solid phase epitaxial growth Jul. 12, 1988
4646427 Method of electrically adjusting the zener knee of a lateral polysilicon zener diode Mar. 3, 1987
4643937 Laminate formed from a polyarylate sheet and a polycarbonate and/or polyester sheet Feb. 17, 1987
4590130 Solid state zone recrystallization of semiconductor material on an insulator May. 20, 1986
4500388 Method for forming monocrystalline semiconductor film on insulating film Feb. 19, 1985
4174521 PROM electrically written by solid phase epitaxy Nov. 13, 1979
4165558 Fabrication of photovoltaic devices by solid phase epitaxy Aug. 28, 1979
4132571 Growth of polycrystalline semiconductor film with intermetallic nucleating layer Jan. 2, 1979
4012235 Solid phase epitaxial growth Mar. 15, 1977

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