| Patent Number |
Title Of Patent |
Date Issued |
| 5543361 |
Process for forming titanium silicide local interconnect |
Aug. 6, 1996 |
| 5536684 |
Process for formation of epitaxial cobalt silicide and shallow junction of silicon |
Jul. 16, 1996 |
| 5529954 |
Method of diffusing a metal through a silver electrode to form a protective film on the surface of the electrode |
Jun. 25, 1996 |
| 5480748 |
Protection of aluminum metallization against chemical attack during photoresist development |
Jan. 2, 1996 |
| 5462892 |
Semiconductor processing method for preventing corrosion of metal film connections |
Oct. 31, 1995 |
| 5447875 |
Self-aligned silicided gate process |
Sep. 5, 1995 |
| 5434096 |
Method to prevent silicide bubble in the VLSI process |
Jul. 18, 1995 |
| 5427965 |
Method of fabricating a complementary heterojunction FET |
Jun. 27, 1995 |
| 5403779 |
Refractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVD |
Apr. 4, 1995 |
| 5399527 |
Method of forming multilayer aluminum wiring in semiconductor IC |
Mar. 21, 1995 |
| 5384280 |
Method of manufacturing a semiconductor device isolated by a trench |
Jan. 24, 1995 |
| 5366928 |
Method of manufacturing a semiconductor device, in which a metal conductor track is provided on a surface of a semiconductor body |
Nov. 22, 1994 |
| 5326724 |
Oxide-capped titanium silicide formation |
Jul. 5, 1994 |
| 5273914 |
Method of fabricating a CMOS semiconductor devices |
Dec. 28, 1993 |
| 5256550 |
Fabricating a semiconductor device with strained Si.sub.1-x Ge.sub.x layer |
Oct. 26, 1993 |
| 5196360 |
Methods for inhibiting outgrowth of silicide in self-aligned silicide process |
Mar. 23, 1993 |
| 5192707 |
Method of forming isolated regions of oxide |
Mar. 9, 1993 |
| 5134093 |
Method of fabricating a semiconductor device including a protective layer |
Jul. 28, 1992 |
| 5130261 |
Method of rendering the impurity concentration of a semiconductor wafer uniform |
Jul. 14, 1992 |
| 5126281 |
Diffusion using a solid state source |
Jun. 30, 1992 |
| 5084411 |
Semiconductor processing with silicon cap over Si.sub.1-x Ge.sub.x Film |
Jan. 28, 1992 |
| 5066610 |
Capping technique for zone-melting recrystallization of insulated semiconductor films |
Nov. 19, 1991 |
| 5063166 |
Method of forming a low dislocation density semiconductor device |
Nov. 5, 1991 |
| 5013684 |
Buried disordering sources in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth |
May. 7, 1991 |
| 4981814 |
Preparation of semiconductor devices |
Jan. 1, 1991 |
| 4980313 |
Method of producing a semiconductor laser |
Dec. 25, 1990 |
| 4978637 |
Local interconnect process for integrated circuits |
Dec. 18, 1990 |
| 4963501 |
Method of fabricating semiconductor devices with sub-micron linewidths |
Oct. 16, 1990 |
| 4962050 |
GaAs FET manufacturing process employing channel confining layers |
Oct. 9, 1990 |
| 4960728 |
Homogenization anneal of II-VI compounds |
Oct. 2, 1990 |
| 4935384 |
Method of passivating semiconductor surfaces |
Jun. 19, 1990 |
| 4916088 |
Method of making a low dislocation density semiconductor device |
Apr. 10, 1990 |
| 4906583 |
Making a semiconductor photodetector |
Mar. 6, 1990 |
| 4900257 |
Method of making a polycide gate using a titanium nitride capping layer |
Feb. 13, 1990 |
| 4886764 |
Process for making refractory metal silicide cap for protecting multi-layer polycide structure |
Dec. 12, 1989 |
| 4883769 |
Method of making a multidimensional quantum-well array |
Nov. 28, 1989 |
| 4859626 |
Method of forming thin epitaxial layers using multistep growth for autodoping control |
Aug. 22, 1989 |
| 4824798 |
Method of introducing impurity species into a semiconductor structure from a deposited source |
Apr. 25, 1989 |
| 4687682 |
Back sealing of silicon wafers |
Aug. 18, 1987 |
| 4605447 |
Methods of manufacturing semiconductor devices |
Aug. 12, 1986 |
| 4357180 |
Annealing of ion-implanted GaAs and InP semiconductors |
Nov. 2, 1982 |
| 4290830 |
Method of selectively diffusing aluminium into a silicon semiconductor substrate |
Sep. 22, 1981 |
| 4283439 |
Method of manufacturing a semiconductor device by forming a tungsten silicide or molybdenum silicide electrode |
Aug. 11, 1981 |
| 4058413 |
Ion implantation method for the fabrication of gallium arsenide semiconductor devices utilizing an aluminum nitride protective capping layer |
Nov. 15, 1977 |
| 3990097 |
Silicon solar energy cell having improved back contact and method forming same |
Nov. 2, 1976 |
| 3960620 |
Method of making a transmission mode semiconductor photocathode |
Jun. 1, 1976 |
