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Class Information
Number: 148/DIG.147
Name: Metal treatment > Silicides

Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
5106786 Thin coatings for use in semiconductor integrated circuits and processes as antireflection coatings consisting of tungsten silicide Apr. 21, 1992
5098861 Method of processing a semiconductor substrate including silicide bonding Mar. 24, 1992
5075251 Tungsten silicide self-aligned formation process Dec. 24, 1991
5070038 Method of forming low-resistive contact to N+/P+ preohmic regions in very large scale integrated devices Dec. 3, 1991
5066613 Process for making semiconductor-on-insulator device interconnects Nov. 19, 1991
5059554 Method for forming polycrystalline silicon contacts Oct. 22, 1991
5049514 Method of making a MOS device having a polycide gate Sep. 17, 1991
5047367 Process for formation of a self aligned titanium nitride/cobalt silicide bilayer Sep. 10, 1991
5041394 Method for forming protective barrier on silicided regions Aug. 20, 1991
5028553 Method of making fast, trench isolated, planar flash EEPROMS with silicided bitlines Jul. 2, 1991
5028554 Process of fabricating an MIS FET Jul. 2, 1991
5024971 Method for patterning submicron openings using an image reversal layer of material Jun. 18, 1991
5015592 Method of fabricating a multi-layer metal silicide infrared detector May. 14, 1991
5013686 Method of making semiconductor devices having ohmic contact May. 7, 1991
5010032 Process for making CMOS device with both P+ and N+ gates including refractory metal silicide and nitride interconnects Apr. 23, 1991
4983547 Method of forming a silicide film Jan. 8, 1991
4983544 Silicide bridge contact process Jan. 8, 1991
4977098 Method of forming a self-aligned bipolar transistor using amorphous silicon Dec. 11, 1990
4966869 Tungsten disilicide CVD Oct. 30, 1990
4960723 Process for making a self aligned vertical field effect transistor having an improved source contact Oct. 2, 1990
4931411 Integrated circuit process with TiN-gate transistor Jun. 5, 1990
4920073 Selective silicidation process using a titanium nitride protective layer Apr. 24, 1990
4918033 PECVD (plasma enhanced chemical vapor deposition) method for depositing of tungsten or layers containing tungsten by in situ formation of tungsten fluorides Apr. 17, 1990
4914042 Forming a transition metal silicide radiation detector and source Apr. 3, 1990
4912061 Method of forming a salicided self-aligned metal oxide semiconductor device using a disposable silicon nitride spacer Mar. 27, 1990
4904620 Method of manufacturing a semiconductor device including a titanium disilicide contact Feb. 27, 1990
4902645 Method of selectively forming a silicon-containing metal layer Feb. 20, 1990
4900257 Method of making a polycide gate using a titanium nitride capping layer Feb. 13, 1990
4901121 Semiconductor device comprising a perforated metal silicide layer Feb. 13, 1990
4897368 Method of fabricating a polycidegate employing nitrogen/oxygen implantation Jan. 30, 1990
4886764 Process for making refractory metal silicide cap for protecting multi-layer polycide structure Dec. 12, 1989
4885259 Method of manufacturing a semiconductor device, in which metal silicide is provided in a self-registered manner Dec. 5, 1989
4880753 Method of fabricating a polysilicon thin film transistor Nov. 14, 1989
4877755 Method of forming silicides having different thicknesses Oct. 31, 1989
4873204 Method for making silicide interconnection structures for integrated circuit devices Oct. 10, 1989
4871691 Selective deposition process of a refractory metal silicide onto silicon areas Oct. 3, 1989
4855247 Process for fabricating self-aligned silicide lightly doped drain MOS devices Aug. 8, 1989
4853347 Selective metal deposition process Aug. 1, 1989
4849344 Enhanced density modified isoplanar process Jul. 18, 1989
4843033 Method for outdiffusion of zinc into III-V substrates using zinc tungsten silicide as dopant source Jun. 27, 1989
4839309 Fabrication of high-speed dielectrically isolated devices utilizing buried silicide outdiffusion Jun. 13, 1989
4833099 Tungsten-silicide reoxidation process including annealing in pure nitrogen and subsequent oxidation in oxygen May. 23, 1989
4804636 Process for making integrated circuits having titanium nitride triple interconnect Feb. 14, 1989
4800177 Semiconductor device having multilayer silicide contact system and process of fabrication thereof Jan. 24, 1989
4795722 Method for planarization of a semiconductor device prior to metallization Jan. 3, 1989
4789885 Self-aligned silicide in a polysilicon self-aligned bipolar transistor Dec. 6, 1988
4788160 Process for formation of shallow silicided junctions Nov. 29, 1988
4786611 Adjusting threshold voltages by diffusion through refractory metal silicides Nov. 22, 1988
4784973 Semiconductor contact silicide/nitride process with control for silicide thickness Nov. 15, 1988
4783371 Photomask material Nov. 8, 1988

1 2 3 4

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