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Class Information
Number: 148/DIG.147
Name: Metal treatment > Silicides
Description:










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
6074925 Method for fabricating semiconductor device with polycide structure for electrode or interconnect Jun. 13, 2000
6025241 Method of fabricating semiconductor devices with self-aligned silicide Feb. 15, 2000
5994191 Elevated source/drain salicide CMOS technology Nov. 30, 1999
5894037 Silicon semiconductor substrate and method of fabricating the same Apr. 13, 1999
5834368 Integrated circuit with a metal silicide film uniformly formed Nov. 10, 1998
5830802 Process for reducing halogen concentration in a material layer during semiconductor device fabrication Nov. 3, 1998
5814537 Method of forming transistor electrodes from directionally deposited silicide Sep. 29, 1998
5726071 Manufacturing method of CMOS transistor Mar. 10, 1998
5705417 Method for forming self-aligned silicide structure Jan. 6, 1998
5686340 Manufacturing method of CMOS transistor Nov. 11, 1997
5591674 Integrated circuit with silicon contact to silicide Jan. 7, 1997
5567651 Self-aligned cobalt silicide on MOS integrated circuits Oct. 22, 1996
5543340 Method for manufacturing offset polysilicon thin-film transistor Aug. 6, 1996
5543361 Process for forming titanium silicide local interconnect Aug. 6, 1996
5541131 Peeling free metal silicide films using ion implantation Jul. 30, 1996
5536684 Process for formation of epitaxial cobalt silicide and shallow junction of silicon Jul. 16, 1996
5512502 Manufacturing method for semiconductor integrated circuit device Apr. 30, 1996
5510295 Method for lowering the phase transformation temperature of a metal silicide Apr. 23, 1996
5510297 Process for uniform deposition of tungsten silicide on semiconductor wafers by treatment of susceptor having aluminum nitride surface thereon with tungsten silicide after cleaning of susceptor Apr. 23, 1996
5447872 Manufacturing method of CMOS transistor including heat treatments of gate electrodes and LDD regions at reducing temperatures Sep. 5, 1995
5434096 Method to prevent silicide bubble in the VLSI process Jul. 18, 1995
5418179 Process of fabricating complementary inverter circuit having multi-level interconnection May. 23, 1995
5409853 Process of making silicided contacts for semiconductor devices Apr. 25, 1995
5405806 Method for forming a metal silicide interconnect in an integrated circuit Apr. 11, 1995
5395799 Method of fabricating semiconductor devices having electrodes comprising layers of doped tungsten disilicide Mar. 7, 1995
5395798 Refractory metal silicide deposition process Mar. 7, 1995
5389576 Method of processing a polycide structure Feb. 14, 1995
5387555 Bonded wafer processing with metal silicidation Feb. 7, 1995
5371041 Method for forming a contact/VIA Dec. 6, 1994
5369055 Method for fabricating titanium silicide contacts Nov. 29, 1994
5342798 Method for selective salicidation of source/drain regions of a transistor Aug. 30, 1994
5332691 Method of forming a contact Jul. 26, 1994
5322809 Self-aligned silicide process Jun. 21, 1994
5316977 Method of manufacturing a semiconductor device comprising metal silicide May. 31, 1994
5302552 Method of manufacturing a semiconductor device whereby a self-aligned cobalt or nickel silicide is formed Apr. 12, 1994
5288666 Process for forming self-aligned titanium silicide by heating in an oxygen rich environment Feb. 22, 1994
5278100 Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers Jan. 11, 1994
5252518 Method for forming a mixed phase TiN/TiSi film for semiconductor manufacture using metal organometallic precursors and organic silane Oct. 12, 1993
5250147 Method of producing a layer system and a layer system as produced thereby Oct. 5, 1993
5238874 Fabrication method for laminated films comprising Al-Si-Co alloy film and refractory metal silioide copper film Aug. 24, 1993
5236869 Method of producing semiconductor device Aug. 17, 1993
5236872 Method of manufacturing a semiconductor device having a semiconductor body with a buried silicide layer Aug. 17, 1993
5231056 Tungsten silicide (WSi.sub.x) deposition process for semiconductor manufacture Jul. 27, 1993
5231042 Formation of silicide contacts using a sidewall oxide process Jul. 27, 1993
5217923 Method of fabricating a semiconductor device having silicided source/drain regions Jun. 8, 1993
5183782 Process for fabricating a semiconductor device including a tungsten silicide adhesive layer Feb. 2, 1993
5151385 Method of manufacturing a metallic silicide transparent electrode Sep. 29, 1992
5143866 Dry etching method for refractory metals, refractory metal silicides, and other refractory metal compounds Sep. 1, 1992
5130266 Polycide gate MOSFET process for integrated circuits Jul. 14, 1992
5108953 Method for fabricating a semiconductive device comprising a refractory metal silicide thin film Apr. 28, 1992

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