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Class Information
Number: 148/DIG.144
Name: Metal treatment > Shallow diffusion
Description:










Patents under this class:

Patent Number Title Of Patent Date Issued
5925574 Method of producing a bipolar transistor Jul. 20, 1999
5747378 Method of damage free doping for forming a dram memory cell May. 5, 1998
5674777 Method for forming silicon-boron binary compound layer as boron diffusion source in silicon electronic device Oct. 7, 1997
5670391 Process for reducing transient diffusion of dopant atoms Sep. 23, 1997
5599734 Method for fabricating MOS transistor utilizing doped disposable layer Feb. 4, 1997
5518945 Method of making a diffused lightly doped drain device with built in etch stop May. 21, 1996
5453389 Defect-free bipolar process Sep. 26, 1995
5444024 Method for low energy implantation of argon to control titanium silicide formation Aug. 22, 1995
5310711 Method of forming doped shallow electrical junctions May. 10, 1994
5227329 Method of manufacturing semiconductor device Jul. 13, 1993
5183777 Method of forming shallow junctions Feb. 2, 1993
5118633 Method for manufacturing a BiCMOS semiconductor device Jun. 2, 1992











 
 
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