| Patent Number |
Title Of Patent |
Date Issued |
| 5773358 |
Method of forming a field effect transistor and method of forming CMOS integrated circuitry |
Jun. 30, 1998 |
| 5568288 |
Method for forming thin film transistors with anodic oxide on sides of gate line |
Oct. 22, 1996 |
| 5420057 |
Simplified contact method for high density CMOS |
May. 30, 1995 |
| 5288666 |
Process for forming self-aligned titanium silicide by heating in an oxygen rich environment |
Feb. 22, 1994 |
| 5086017 |
Self aligned silicide process for gate/runner without extra masking |
Feb. 4, 1992 |
| 5081060 |
Method for forming a connection device in a semiconductor device |
Jan. 14, 1992 |
| 5057451 |
Method of forming an antifuse element with substantially reduced capacitance using the LOCOS technique |
Oct. 15, 1991 |
| 5028555 |
Self-aligned semiconductor devices |
Jul. 2, 1991 |
| 4992389 |
Making a self aligned semiconductor device |
Feb. 12, 1991 |
| 4977108 |
Method of making self-aligned, planarized contacts for semiconductor devices |
Dec. 11, 1990 |
| 4962050 |
GaAs FET manufacturing process employing channel confining layers |
Oct. 9, 1990 |
| 4895520 |
Method of fabricating a submicron silicon gate MOSFETg21 which has a self-aligned threshold implant |
Jan. 23, 1990 |
| 4851364 |
Method of forming well regions for field effect transistors utilizing self-aligned techniques |
Jul. 25, 1989 |
| 4830971 |
Method for manufacturing a semiconductor device utilizing self-aligned contact regions |
May. 16, 1989 |
| 4646426 |
Method of producing MOS FET type semiconductor device |
Mar. 3, 1987 |
| 4622735 |
Method for manufacturing a semiconductor device utilizing self-aligned silicide regions |
Nov. 18, 1986 |
| 4586238 |
Method of manufacturing field-effect transistors utilizing self-aligned techniques |
May. 6, 1986 |
| 4541166 |
Method of making semiconductor deivce using a conductive layer as mask |
Sep. 17, 1985 |
| 4468855 |
Method of making aluminum gate self-aligned FET by selective beam annealing through reflective and antireflective coatings |
Sep. 4, 1984 |
| 4460413 |
Method of patterning device regions by oxidizing patterned aluminum layer |
Jul. 17, 1984 |
| 4356622 |
Method of producing low-resistance diffused regions in IC MOS semiconductor circuits in silicon-gate technology metal silicide layer formation |
Nov. 2, 1982 |
| 4356040 |
Semiconductor device having improved interlevel conductor insulation |
Oct. 26, 1982 |
| 4330931 |
Process for forming metal plated regions and lines in MOS circuits |
May. 25, 1982 |
| 4299862 |
Etching windows in thick dielectric coatings overlying semiconductor device surfaces |
Nov. 10, 1981 |
| 4292729 |
Electron-beam programmable semiconductor device structure |
Oct. 6, 1981 |
| 4287661 |
Method for making an improved polysilicon conductor structure utilizing reactive-ion etching and thermal oxidation |
Sep. 8, 1981 |
| 4277881 |
Process for fabrication of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
Jul. 14, 1981 |
| 4257832 |
Process for producing an integrated multi-layer insulator memory cell |
Mar. 24, 1981 |
| 4254428 |
Self-aligned Schottky diode structure and method of fabrication |
Mar. 3, 1981 |
| 4252581 |
Selective epitaxy method for making filamentary pedestal transistor |
Feb. 24, 1981 |
| 4252582 |
Self aligned method for making bipolar transistor having minimum base to emitter contact spacing |
Feb. 24, 1981 |
| 4239559 |
Method for fabricating a semiconductor device by controlled diffusion between adjacent layers |
Dec. 16, 1980 |
| 4234362 |
Method for forming an insulator between layers of conductive material |
Nov. 18, 1980 |
| 4231811 |
Variable thickness self-aligned photoresist process |
Nov. 4, 1980 |
| 4231051 |
Process for producing minimal geometry devices for VSLI applications utilizing self-aligned gates and self-aligned contacts, and resultant structures |
Oct. 28, 1980 |
| 4228212 |
Composite conductive structures in integrated circuits |
Oct. 14, 1980 |
| 4227944 |
Methods of making composite conductive structures in integrated circuits |
Oct. 14, 1980 |
| 4224733 |
Ion implantation method |
Sep. 30, 1980 |
| 4222164 |
Method of fabrication of self-aligned metal-semiconductor field effect transistors |
Sep. 16, 1980 |
| 4221045 |
Self-aligned contacts in an ion implanted VLSI circuit |
Sep. 9, 1980 |
| 4221044 |
Self-alignment of gate contacts at local or remote sites |
Sep. 9, 1980 |
| 4219925 |
Method of manufacturing a device in a silicon wafer |
Sep. 2, 1980 |
| 4219379 |
Method for making a semiconductor device |
Aug. 26, 1980 |
| 4214917 |
Process of forming a semiconductor memory cell with continuous polysilicon run circuit elements |
Jul. 29, 1980 |
| 4210993 |
Method for fabricating a field effect transistor |
Jul. 8, 1980 |
| 4209349 |
Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching |
Jun. 24, 1980 |
| 4205330 |
Method of manufacturing a low voltage n-channel MOSFET device |
May. 27, 1980 |
| 4201997 |
MESFET semiconductor device and method of making |
May. 6, 1980 |
| 4192059 |
Process for and structure of high density VLSI circuits, having inherently self-aligned gates and contacts for FET devices and conducting lines |
Mar. 11, 1980 |
| 4183040 |
MOS RAM with implant forming peripheral depletion MOSFET channels and capacitor bottom electrodes |
Jan. 8, 1980 |
